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buv48, buv48a npn silicon power transistors
1 august 1978 - revised september 2002 specifications are subject to change without notice. rugged triple-diffused planar construction 15 a continuous collector current 1000 volt blocking capability absolute maximum ratings at 25c case temperature (unless otherwise noted) note 1: this value applies for t p 2 ms, duty cycle 2%. rating symbol value unit collector-emitter voltage (v be = 0 v) buv48 buv48a v ces 850 1000 v collector-emitter voltage (r be = 10 ? ) buv48 buv48a v cer 850 1000 v collector-emitter voltage (i b = 0) buv48 buv48a v ceo 400 450 v continuous collector current i c 15 a peak collector current (see note 1) i cm 30 a continuous base current i b 4a peak base current i bm 20 a non repetitive accidental peak surge current i csm 55 a continuous device dissipation at (or below) 25c case temperature p tot 125 w operating junction temperature range t j -65 to +150 c storage temperature range t stg -65 to +150 c sot-93 package (top view) pin 2 is in electrical contact with the mounting base. mdtraaa b c e 1 2 3 obsolete
buv48, buv48a npn silicon power transistors 2
august 1978 - revised september 2002 specifications are subject to change without notice. notes: 2. inductive loop switching measurement. 3. these parameters must be measured using pulse techniques, t p = 300 s, duty cycle 2%. 4. these parameters must be measured using voltage-sensing contacts, separate from the current carrying conta cts. ? voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25c case temperature (unless otherwise noted) parameter test conditions min typ max unit v ceo(sus) collector-emitter sustaining voltage i c = 200 ma l = 25 mh (see note 2) buv48 buv48a 400 450 v i ces collector-emitter cut-off current v ce = 850 v v ce = 1000 v v ce = 850 v v ce = 1000 v v be =0 v be =0 v be =0 v be =0 t c = 125c t c = 125c buv48 buv48a buv48 buv48a 0.2 0.2 2.0 2.0 ma i cer collector-emitter cut-off current v ce = 850 v v ce = 1000 v v ce = 850 v v ce = 1000 v r be =10 ? r be =10 ? r be =10 ? r be =10 ? t c = 125c t c = 125c buv48 buv48a buv48 buv48a 0.5 0.5 4.0 4.0 ma i ebo emitter cut-off current v eb = 5 v i c =0 1 ma v ebo emitter-base breakdown voltage i e = 50 ma i c =0 7 30 v v ce(sat) collector-emitter saturation voltage i b = 2 a i b = 3 a i b = 1.6 a i b = 2.4 a i c = 10 a i c = 15 a i c = 8a i c = 12 a (see notes 3 and 4) buv48 buv48 buv48a buv48a 1.5 5.0 1.5 5.0 v v be(sat) base-emitter saturation voltage i b = 2 a i b = 1.6 a i c = 10 a i c = 8a (see notes 3 and 4) buv48 buv48a 1.6 1.6 v f t current gain bandwidth product v ce = 10 v i c = 0.5a f = 1 mhz 10 mhz c ob output capacitance v cb = 20 v i c = 0 f = 1 mhz 150 pf thermal characteristics parameter min typ max unit r jc junction to case thermal resistance 1c/w resistive-load-switching characteristics at 25c case temperature parameter test conditions ? min typ max unit t on tu r n o n t i m e i c = 10 a i b(on) = 2 a v cc = 150 v i b(off) = -2 a buv48 (see figures 1 and 2) 1.0 s t s storage time 3.0 s t f fall time 0.8 s t on tu r n o n t i m e i c = 8 a i b(on) = 1.6 a v cc = 150 v i b(off) = -1.6 a buv48a (see figures 1 and 2) 1.0 s t s storage time 3.0 s t f fall time 0.8 s inductive-load-switching characteristics at 100c case temperature parameter test conditions ? min typ max unit t sv voltage storage time i c = 10 a v be(off) = -5 v i b(on) = 2 a (see figures 3 and 4) buv48 4.0 s t fi current fall time 0.4 s t sv voltage storage time i c = 8 a v be(off) = -5 v i b(on) = 1.6 a (see figures 3 and 4) buv48a 4.0 s t fi current fall time 0.4 s obsolete
buv48, buv48a npn silicon power transistors 3
august 1978 - revised september 2002 specifications are subject to change without notice. parameter measurement information figure 1. resistive-load switching test circuit figure 2. resistive-load switching waveforms t p f 100 v 1 680 f v 1 v cc = 250 v +25 v bd135 47 ? 100 ? 120 ? 15 ? 82 ? 100 ? bd136 680 f tut t t p = 20 s duty cycle = 1% v 1 = 15 v, source impedance = 50 ? v cc 0% c b 90% 10% a 10% 90% 10% 90% e f d i b i c i b(on) i b(off) 0% di b dt 2 a/ s a - b = t d b - c = t r e - f = t f d - e = t s a - c = t on d - f = t off obsolete
buv48, buv48a npn silicon power transistors 4
august 1978 - revised september 2002 specifications are subject to change without notice. parameter measurement information figure 3. inductive-load switching test circuit figure 4. inductive-load switching waveforms rb (on) v be(off) v clamp = 400 v v cc h 180 33 ? +5v d45h11 by205-400 by205-400 2n2222 by205-400 5x by205-400 by205-400 1 k ? 68 ? 1 k ? 47 ? 2n2904 d44h11 100 ? 270 ? v gen +5v 1 k ? 0.02 f tut 1 pf 33 ? adjust pw to obtain i c for i c < 6 a v cc = 50 v for i c 6 a v cc = 100 v base current a (90%) i b(on) i b collector voltage collector current d (90%) e (10%) f (2%) c b 90% 10% v ce i c(on) a - b = t sv b - c = t rv d - e = t fi e - f = t ti b - e = t xo notes: a. waveforms are monitored on an oscilloscope with the following c haracteristics: t r < 15 ns, r in > 10 ? , c in < 11.5 pf. b. resistors must be noninductive types. obsolete
buv48, buv48a npn silicon power transistors 5
august 1978 - revised september 2002 specifications are subject to change without notice. typical characteristics figure 5. figure 6. figure 7. figure 8. typical dc current gain vs collector current i c - collector current - a 20 01 10 10 h fe - typical dc current gain 10 10 100 tcp765aa v ce = 5 v t c = 125c t c = 25c t c = -65c collector-emitter saturation voltage vs base current i b - base current - a 01 10 10 v ce(sat) - collector-emitter saturation voltage - v 0 10 20 30 40 50 tcp765ab i c = 5 a i c = 10 a i c = 15 a t c = 25c collector-emitter saturation voltage vs base current i b - base current - a 01 10 10 v ce(sat) - collector-emitter saturation voltage - v 0 10 20 30 40 50 tcp765ai t c = 100c i c = 5 a i c = 10 a i c = 15 a base-emitter saturation voltage vs base current i b - base current - a 0123456 v be(sat) - base-emitter saturation voltage - v 08 09 10 11 12 13 14 15 16 tcp765ac i c = 5 a i c = 10 a i c = 15 a obsolete
buv48, buv48a npn silicon power transistors 6
august 1978 - revised september 2002 specifications are subject to change without notice. typical characteristics figure 9. maximum safe operating regions figure 10. collector cut-off current vs case temperature t c - case temperature - c -80-60-40-200 20406080100120140 i ces - collector cut-off current - a 40 001 01 10 tcp765ad buv48a v ce = 1000 v buv48 v ce = 850 v maximum forward-bias safe operating area v ce - collector-emitter voltage - v 10 10 100 1000 i c - collector current - a 001 0.1 10 10 100 sap765aa t p = 10 s t p = 50 s t p = 100 s t p = 500 s t p = 1 ms t p = 2 ms dc operation buv48 buv48a obsolete

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