inchange semiconductor product specification silicon pnp power transistors bd896/898/900/902 description ? with to-220c package ? complement to type bd895/897/899/901 ? darlington applications ? for use in output stages in audio equipment, general amplifier,and analogue switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit bd896 -45 BD898 -60 bd900 -80 v cbo collector-base voltage bd902 open emitter -100 v bd896 -45 BD898 -60 bd900 -80 v ceo collector-emitter voltage bd902 open base -100 v v ebo emitter-base voltage open collector -5 v i c collector current-dc -8 a i b base current -300 ma t c =25 ?? 70 p t total power dissipation t a =25 ?? 2 w t j junction temperature 150 ?? t stg storage temperature -65~150 ??
inchange semiconductor product specification 2 silicon pnp power transistors bd896/898/900/902 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit bd896 -45 BD898 -60 bd900 -80 v (br)ceo collector-emitter breakdown voltage bd902 i c =-100ma, i b =0 -100 v v cesat collector-emitter saturation voltage i c =-3a ,i b =-12ma -2.5 v v be base-emitter on voltage i c =-3a ; v ce =-3v -2.5 v bd896 v cb =-45v, i e =0 t c =100 ?? -0.2 -2.0 BD898 v cb =-60v, i e =0 t c =100 ?? -0.2 -2.0 bd900 v cb =-80v, i e =0 t c =100 ?? -0.2 -2.0 i cbo collector cut-off current bd902 v cb =-100v, i e =0 t c =100 ?? -0.2 -2.0 ma bd896 v ce =-30v, i b =0 BD898 v ce =-30v, i b =0 bd900 v ce =-40v, i b =0 i ceo collector cut-off current bd902 v ce =-50v, i b =0 -0.5 ma i ebo emitter cut-off current v eb =-5v; i c =0 -2 ma h fe dc current gain i c =-3a ; v ce =-3v 750 v ec diode forward voltage i e =-8a -3.5 v ton turn-on time 1 | s toff turn-off time i c =-3a ; i b1 =-i b2 =-12ma v be =3.5v;r l =10 |? ;t p =20 | s 5 | s thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.79 ?? /w
inchange semiconductor product specification 3 silicon pnp power transistors bd896/898/900/902 package outline fig.2 outline dimensions
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