SB15H45 www.vishay.com vishay general semiconductor revision: 02-aug-13 1 document number: 89061 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 photovoltaic solar cell protection schottky plastic rectifier high barrier technology for improv ed high temperat ure performance this datasheet reflects specifications of product in ac tual application. features ? guardring for overvoltage protection ? low forward voltage drop, low power losses ? high efficiency operation ? high forward surge capability ? solder dip 275 c max. 10 s, per jesd 22-b106 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in solar cell junction box as a bypass diode for protection, using dc forward current without reverse bias. mechanical data case: p600, molded epoxy over passivated junction molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs compliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? e3 suffix meets jesd 201 class 1a whisker test polarity: color band denotes cathode end notes (1) with heatsink, t l = 25 c (2) without heatsink, free air (3) meets the requirements of iec 61 215 ed. 2 bypass di ode thermal test primary characteristics i f(av) 15 a v rrm 45 v i fsm 300 a v f at i f = 15 a 0.46 v t op max. 175 c t j max. (dc forward current) 200 c package p600 diode variation single die p600 maximum ratings (t a = 25 c unless otherwise noted) parameter symbol SB15H45 unit maximum repetitive pe ak reverse voltage v rrm 45 v maximum average forward rectified current (fig. 1) i f(av) (1) 15 a i f(av) (2) 7 peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on rated load i fsm 300 a operating junction and storage temperature range t op , t stg - 55 to + 175 c junction temperature in dc forward current ? without reverse bias, t ? 1 h (fig. 1) t j (3) ? 200 c
SB15H45 www.vishay.com vishay general semiconductor revision: 02-aug-13 2 document number: 89061 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: 10 ms pulse width notes (1) without heatsink, free air (2) t a = 75 c, t l = 125 c, t j = 175 c, infinite mass at 0.375" (9.5 mm) lead length ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve notes ? mounted on junction box ? using dc forward current ? junction box sa (sink to ambient) ?assumes r ? ls (lead to sink) of 5 c/w ? thermal resistance r ? sa (sink to ambient): ? ?p d : power dissipation p d = v f x i f electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditi ons symbol typ. max. unit instantaneous forward voltage i f = 5 a t a = 25 c v f (1) 0.48 - v i f = 7.5 a 0.50 - i f = 15 a 0.56 0.64 i f = 5 a t a = 125 c 0.35 - i f = 7.5 a 0.39 - i f = 15 a 0.46 0.54 reverse current v r = 45 v t a = 25 c i r (2) 10 300 a t a = 125 c 8 20 ma typical junction capacitance 4.0 v, 1 mhz c j 1020 - pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol SB15H45 unit thermal resistance r ? ja (1) 66 c/w r ? jl (1) 14 typical thermal resistance r ? jl (2) 3.5 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode SB15H45-e3/54 1.756 54 800 13" di ameter paper tape and reel 0 2 4 6 16 0 50 100 150 200 ambient temperature (c) dc forwar d current (a) 25 75 125 175 8 10 12 14 t j = 175 c free air t j = 200 c with heat s ink, t l = 25 c r s a = 18 c/w ( s ee note s ) r s a = 16 c/w ( s ee note s ) r ? sa t j - t a ?? p d ----------------------- - - r ? jl + r ? ls ?? =
SB15H45 www.vishay.com vishay general semiconductor revision: 02-aug-13 3 document number: 89061 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 2 - typical instantaneous forward characteristics fig. 3 - typical reverse characteristics fig. 4 - typical j unction capacitance ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? package outline dimensions in inches (millimeters) 10 100 1 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.8 in s tantaneou s forward voltage (v) in s tantaneou s forward current (a) 0.1 0.7 t a = 150 c t a = 125 c t a = 25 c t a = 175 c 50 100 100 10 10 0.0001 20 30 40 60 70 80 90 0.01 1 1000 percent of rated peak rever s e voltage (%) in s tantaneou s rever s e current (ma) 0.001 0.1 t a = 150 c t a = 125 c t a = 25 c t a = 175 c 10 1 100 100 1000 10 000 0.1 rever s e voltage (v) junction capacit ance (pf) t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p 0.052 (1.32) 0.048 (1.22) 0.360 (9.1) 0.340 (8.6) dia. 1.0 (25.4) min. 0.360 (9.1) 0.340 (8.6) 1.0 (25.4) min. p600
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