solderable ends d2 d2=d1 0 0.20 0.5 0.1 0.5 0.1 3.5 0.2 1.6 0.1 d1 features ? plastic package has underwriters laboratories flammability classification 94v-0 ? glass passivated chip junction ? for surface mount applications ? high temperature metallurgically bonded construction of 265 ?? for 10 seconds in solder bath mechanical data ? case: jedec do-213aa,molded plastic ? terminals: axial lead ,solderable per mil- std-750,method 2026 ? polarity: color band denotes cathode ? weight: 0.0014 ounces, 0.036 grams ? mounting position: any maximum ratings and electrical characteristics ratings at 25 ?? ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate current by 20%. rgl 1b rgl 1d rgl 1g rgl 1j rgl 1k rgl 1m units maximum recurrent peak reverse voltage 100 200 400 600 800 1000 v maximum rms voltage 70 140 280 420 560 700 v maximum dc blocking voltage 100 200 400 600 800 1000 v maximum average forward rectified current t t =7 5 ?? peak forward surge current 8.3ms single half-sine-wave superimposed on rated load (jedec method) maximum instantaneous forward voltage @1.0a v maximum reverse current @t a =25 ?? at rated dc blocking voltage @t a =125 ?? maximum reverse recovery time (note 1) 250 ns typical thermal resistance (note 3) ?? /w operating junction temperature range ?? storage temperature range ?? note: 1. measured with i f =0.5a,i r =1.0a,i rr =0.25a 2. measured at 1.0mhz and applied reverse voltage of 4.0v dc. 3. thermal resistance from junction to ambient, 0.240.24"(6.06.0mm) copper pads to each terminal. 1.3 t rr 150 500 v dc a a i (av) 1.0 i fsm 25 a v f i r 5.0 50 v rrm v rms rgl 1a 50 50 35 t j t stg r ja - 55 ---- +175 - 55 ---- +175 150 rgl 1 a - - - rgl 1 m ? high temperature soldering guaranteed:450 ?? /5 seconds do - 213a a voltage range : 50 --- 1000 v current: 1.0 a at terminals.complete device sub-mersible temperature ? cavity-free glass passivated junction surface mount rectifier s dimensions in millimeters www.diode.kr diode semiconductor korea
-1.0a -0.25a 0 +0.5a t rr 1cm pulse generator (note2) d.u.t. 1 n.1. 50 n.1. oscilloscope (note 1) (+) 50vdc (approx) (-) 10 n.1. (-) (+) 2. rise time=10ns ma x. source impeda nce=5o notes: 1. rise time =7ns ma x. input impeda nce=1m .22pf f i g . 5 - - r e v e r s e r e c o v e ry t i m e c h ar a c t e r i s t i c a nd t e s t c i r c u i t d i a g r am set time base for 75 /1 5 0 ns /cm 0.6 0 . 8 1 . 0 1 . 2 1 . 4 1 . 6 0 . 0 0 1 0 . 0 1 0.1 1 1 0 t j = 2 5 pulse width=300us 0 25 50 75 100 125 150 175 0.6 1.0 1.5 0.8 0.4 0.2 resistive or inductive load 0.2x0.2"(5.0x5.0mm) copper pad areas 0 110 100 12.5 25 tl=110 ?? 8.3ms single half sine-wave (jedec method) 0 0.1 10 20 40 60 80 100 0.01 t a =125 ?? t a = 1 0 0 ?? t a = 2 5 ?? 1 100 avera g e f o r w ard rec t i f ied current,amperes peak forward surge current,amperes instantaneous for w ard current,amperes ins t a n t ane o us reverse leakage current(ma) fig.2 -- maximum non-repetitive peak forward surge current terminal t e m p e r a t u r e ?? n u m b e r o f c y c l e s a t 60 h z instantaneous forward voltage(v) percent of rated peak reverse voltage. ( ? ) rgl 1 a - - - rgl 1 m fig.3 -- typical instantaneous forward characteri sti cs fig. 4 -- typical reverse characteri sti cs fig. 1 -- forward current derating curve www.diode.kr diode semiconductor korea
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