? semiconductor components industries, llc, 2006 august, 2006 ? rev. 2 1 publication order number: mac223a6fp/d mac223a6fp, mac223a8fp, MAC223A10FP preferred device triacs silicon bidirectional thyristors designed primarily for full-wave ac control applications, such as lighting systems, heater controls, motor controls and power s upplies; or wherever full ? wave silicon ? gate ? controlled devices are needed. ? off ? state v oltages to 800 volts ? all diffused and glass passivated junctions for parameter uniformity and stability ? small, rugged thermowatt construction for thermal resistance and high heat dissipation ? gate triggering guaranteed in four modes ? indicates ul registered ? file #e69369 ? device marking: logo, device type, e.g., mac223a6fp, date code maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive off ? state voltage (1) (t j = ? 40 to +125 c, sine wave 50 to 60 hz, gate open) mac223a6fp mac223a8fp MAC223A10FP v drm, v rrm 400 600 800 volts on-state rms current (t c = +80 c) (2) full cycle sine wave 50 to 60 hz i t(rms) 25 amps peak non ? repetitive surge current (one full cycle, 60 hz, t c = 80 c) preceded and followed by rated current i tsm 250 amps circuit fusing (t = 8.3 ms) i 2 t 260 a 2 s peak gate power (t 2 sec; t c = +80 c) p gm 20 watts average gate power (t = 8.3 ms; t c = +80 c) p g(av) 0.5 watt peak gate current (t 2 sec; t c = +80 c) i gm 2.0 amps peak gate voltage (t 2 sec; t c = +80 c) v gm 10 volts rms isolation voltage (t a = 25 c, relative humidity 20%) () v (iso) 1500 volts operating junction temperature t j ? 40 to +125 c storage temperature range t stg ? 40 to +150 c mounting torque ? 8.0 in. lb. (1) v drm and v rrm for all types can be applied on a continuous basis. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. (2) the case temperature reference point for all t c measurements is a point on the center lead of the package as close as possible to the plastic body. isolated triac 25 amperes rms 400 thru 800 volts preferred devices are recommended choices for future use and best overall value. device package shipping ordering information mac223a6fp isolated to220fp 500/box http://onsemi.com mac223a8fp isolated to220fp 500/box mt1 g mt2 isolated to ? 220 full pack case 221c style 3 1 2 3 pin assignment 1 2 3 main terminal 2 gate main terminal 1 MAC223A10FP isolated to220fp 500/box ()
mac223a6fp, mac223a8fp, MAC223A10FP http://onsemi.com 2 thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 1.2 c/w thermal resistance, case to sink r cs 2.2 c/w thermal resistance, junction to ambient r ja 60 c/w maximum lead temperature for soldering purposes 1/8 from case for 10 seconds t l 260 c electrical characteristics (t c = 25 c unless otherwise noted; electricals apply in both directions) characteristic symbol min typ max unit off characteristics peak repetitive blocking current t j = 25 c (v d = rated v drm , v rrm ; gate open) t j = 125 c i drm , i rrm ? ? ? ? 10 2.0 a ma on characteristics peak on-state voltage (i tm = 35 a peak, pulse width 2 ms; duty cycle 2%) v tm ? 1.4 1.85 volts gate trigger current (continuous dc) (v d = 12 v, r l = 100 ) mt2(+), g(+); mt2( ? ), g( ? ); mt2(+), g( ? ) mt2( ? ), g(+) i gt ? ? 20 30 50 75 ma gate tri gger v oltage (continuous dc) (v d = 12 v, r l = 100 ) mt2(+), g(+); mt2( ? ), g( ? ); mt2(+), g( ? ) mt2( ? ), g(+) v gt ? ? 1.1 1.3 2.0 2.5 volts gate non ? trigger v oltage (v d = 12 v, t j = 125 c, r l = 100 ) all quadrants v gd 0.2 0.4 ? volts holding current (v d = 12 vdc, gate open, initiating current = 200 ma) i h ? 10 50 ma gate controlled turn ? on time (v d = rated v drm , i tm = 35 a peak, i g = 200 ma) t gt ? 1.5 ? s dynamic characteristics critical rate of rise of off ? state voltage (v d = rated v drm , exponential waveform, t c = 125 c) dv/dt ? 40 ? v/ s critical rate of rise of commutation voltage (v d = rated v drm , i tm = 35 a peak, commutating di/dt = 12.6 a/ms, gate unenergized, t c = 80 c) dv/dt(c) ? 5.0 ? v/ s
mac223a6fp, mac223a8fp, MAC223A10FP http://onsemi.com 3 + current + voltage v tm i h symbol parameter v drm peak repetitive forward off state voltage i drm peak forward blocking current v rrm peak repetitive reverse off state voltage i rrm peak reverse blocking current voltage current characteristic of triacs (bidirectional device) i drm at v drm on state off state i rrm at v rrm quadrant 1 mainterminal 2 + quadrant 3 mainterminal 2 ? v tm i h v tm maximum on state voltage i h holding current mt1 (+) i gt gate (+) mt2 ref mt1 ( ? ) i gt gate (+) mt2 ref mt1 (+) i gt gate ( ? ) mt2 ref mt1 ( ? ) i gt gate ( ? ) mt2 ref ? mt2 negative (negative half cycle) mt2 positive (positive half cycle) + quadrant iii quadrant iv quadrant ii quadrant i quadrant definitions for a triac i gt ? + i gt all polarities are referenced to mt1. with in ? phase signals (using standard ac lines) quadrants i and iii are used.
mac223a6fp, mac223a8fp, MAC223A10FP http://onsemi.com 4 figure 1. rms current derating figure 2. on ? state power dissipation i t(rms) , rms on?state current (amps) 15 105 85 75 10 05 95 115 125 t 25 20 i t(rms) , rms on?state current (amps) 15 0 40 20 10 0 510 30 p 20 25 , maximum allowable case temperature ( c) c , average power dissipation (watts) d(av) figure 3. typical gate trigger current figure 4. typical gate trigger voltage figure 5. typical hold current figure 6. typical on ? state characteristics v tm , instantaneous on?state voltage (volts) 0 100 10 1 0.1 1234 t j , junction temperature ( c) 60 ?60 1 0.3 0.2 0.1 40 ?40 ?20 0 20 0.5 2 3 normalized gate current i 50 5 0.5 200 t j = 25 c 120 100 80 140 v d = 12 v r l = 100 t j , junction temperature ( c) 60 ?60 1 0.3 0.2 0.1 40 ?40 ?20 0 20 0.5 2 3 normalized gate voltage 120 100 80 140 v d = 12 v r l = 100 t j , junction temperature ( c) 60 ?60 1 0.3 0.2 0.1 40 ?40 ?20 0 20 0.5 2 normalized hold current 120 100 80 140 i tm = 200 ma gate open , instantaneous on?state current (amps) tm
mac223a6fp, mac223a8fp, MAC223A10FP http://onsemi.com 5 package dimensions isolated to ? 220 full pack case 221c ? 02 issue c notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. lead dimensions uncontrolled within dimension z. ? y ? ? b ? ? t ? q p a k h z g l f d 3 pl m b m 0.25 (0.010) y e n s j r c seating plane dim min max min max millimeters inches a 0.680 0.700 17.28 17.78 b 0.388 0.408 9.86 10.36 c 0.175 0.195 4.45 4.95 d 0.025 0.040 0.64 1.01 e 0.340 0.355 8.64 9.01 f 0.140 0.150 3.56 3.81 g 0.100 bsc 2.54 bsc h 0.110 0.155 2.80 3.93 j 0.018 0.028 0.46 0.71 k 0.500 0.550 12.70 13.97 l 0.045 0.070 1.15 1.77 n 0.049 ??? 1.25 ??? p 0.270 0.290 6.86 7.36 q 0.480 0.500 12.20 12.70 r 0.090 0.120 2.29 3.04 s 0.105 0.115 2.67 2.92 z 0.070 0.090 1.78 2.28 123 style 3: pin 1. mt 1 2. mt 2 3. gate on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 mac223a6fp/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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