cystech electronics corp. spec. no. : c983s6r issued date : 2017.03.21 revised date : page no. : 1/ 9 mta090a02ks6r cystek product specification n-channel mosfet (dual transistors) mta090a02ks6r bv dss 20v i d @v gs =4.5v, t c =25 c 2.8a i d @v gs =4.5v, t a =25 c 1.8a features ? low on-resistance v gs =4.5v, i d =1a 85m ? esd protected gate 110m ? high speed switching ? low-voltage drive ? easily designed drive circuits ? easy to use in parallel ? pb-free lead plating and halogen-free package equivalent circuit outline ordering information device package shipping MTA090A02K6R-0-T1-G sot-363 (pb-free lead plating and halogen-free package) 3000 pcs / tape & reel sot-363 mta090a02ks6r tr1 tr2 environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t1 : 3000 pcs / tape & reel, 7? reel product rank, zero for no rank products product name v gs =2.5v, i d =1a r dson(typ) v gs =1.8v, i d =0.5a 160m
cystech electronics corp. spec. no. : c983s6r issued date : 2017.03.21 revised date : page no. : 2/ 9 mta090a02ks6r cystek product specification the following characteristics apply to both tr1 and tr2 absolute maximum ratings (ta=25 c) parameter symbol limits unit drain-source voltage v dss 20 gate-source voltage v gss 8 v v gs =4.5v, t a =25 c 1.8 (note 1) v gs =4.5v, t a =70 c 1.4 (note 1) v gs =4.5v, t c =25 c 2.8 continuous drain current v gs =4.5v, t c =70 c i d 2.2 pulsued drain current i dm 8 (note 2) t a =25 c 0.61 (note 1) continuous source-drain diode current t c =25 c i s 1 a t a =25 c 0.74 (note 1) t a =70 c 0.47 (note 1) t c =25 c 1.25 power dissipation t c =70 c p d 0.8 w operating junction and storage temp erature range tj ; tstg -55~+150 c thermal data parameter symbol value unit thermal resistance, junction-to-case, max r jc 100 thermal resistance, junction-to-ambient, max (note 1) r ja 170 c/w note : 1.surface mounted on 1 in2 copper pad of fr-4 board, t 5 sec. 220 /w under steady state. 2.pulse width limited by maximum junction temperature. electrical characteristics (t j =25 c, unless otherwise noted) symbol min. typ. max. unit test conditions static bv dss* 20 - - v gs =0v, i d =10 a v gs(th) 0.3 - 1 v v ds =v gs , i d =250 a i gss - - 10 v gs =8v, v ds =0v - - 1 v ds =20v, v gs =0v i dss - - 10 a v ds =20v, v gs =0v, tj=55 c - 85 145 v gs =4.5v, i d =1a - 110 180 v gs =2.5v, i d =1a r ds(on)* - 160 255 m v gs =1.8v i d =0.5a, g fs - 3.5 - s v ds =4v, i d =1.5a dynamic c iss - 157 236 c oss - 34 - c rss - 29 - pf v ds =10v, v gs =0v, f=1mhz
cystech electronics corp. spec. no. : c983s6r issued date : 2017.03.21 revised date : page no. : 3/ 9 mta090a02ks6r cystek product specification t d(on) - 4 6 t r - 18.4 28 t d(off) - 14.6 22 t f - 5.2 8 v ds =10v, i d =1.2a, v gs =4.5v, r g =1 t d(on) - 2.4 4 t r - 18.8 28 t d(off) - 13.2 20 t f - 3.6 6 ns v ds =10v, i d =1.2a, v gs =8v, r g =1 qg - 2.5 3.8 qgs - 0.57 - qgd - 0.53 - nc v ds =10v, i d =1.5a, v gs =4.5v source-drain diode *i s - - 1 t c =25 c *i sm - - 4 a *v sd - 0.86 1.2 v i s =1.2a,v gs =0v *t rr - 4.1 - ns q rr - 1.0 - nc ta - 3 - tb - 1.1 - ns i f =1.2a,v gs =0v, di f /dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2% recommended soldering footprint
cystech electronics corp. spec. no. : c983s6r issued date : 2017.03.21 revised date : page no. : 4/ 9 mta090a02ks6r cystek product specification typical characteristics typical output characteristics 0 2 4 6 8 012345 v ds , drain-source voltage(v) i d , drain current(a) v gs = 1 .5v 5v, 4v,3v,2.5v 2v brekdown voltage vs ambient temperature 0.6 0.8 1.0 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 1000 0.001 0.01 0.1 1 10 id, drain current(a) rds(on), static drain-source on-state resistance() v gs =4.5v v gs =1.8v v gs =2.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 012345 i dr , reverse drain current(a) v sd , source-drain voltage(v) tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 0 50 100 150 200 250 300 350 400 450 500 012345678 v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance() i d =1a i d =500ma drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =4.5v, i d =1a r dson @tj=25c : 81m typ.
cystech electronics corp. spec. no. : c983s6r issued date : 2017.03.21 revised date : page no. : 5/ 9 mta090a02ks6r cystek product specification typical characteristics (cont.) capacitance vs drain-to-source voltage 10 100 1000 0 5 10 15 20 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 0.001 0.01 0.1 1 i d , drain current(a) g fs , forward transfer admittance(s) v ds =10v pulsed ta=25c maximum drain current vs junctiontemperature 0 0.4 0.8 1.2 1.6 2 25 50 75 100 125 150 175 tj, junction temperature(c) -i d , maximum drain current(a) t a =25c, v gs =4.5v, r ja =170c/w maximum safe operating area 0.001 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current (a) dc 10ms 100ms 1ms 100 s t a =25c, tj=150c, v gs =4.5v, r ja =170c/w single pulse gate charge characteristics 0 1 2 3 4 5 6 7 8 01234 qg, total gate charge(nc) -v gs , gate-source voltage(v) 5 v ds =10v i d =1.5a
cystech electronics corp. spec. no. : c983s6r issued date : 2017.03.21 revised date : page no. : 6/ 9 mta090a02ks6r cystek product specification typical characteristics (cont.) typical transfer characteristics 0 2 4 6 8 012345 v gs , gate-source voltage(v) i d , drain current(a) v ds =5v single pulse power rating, junction to ambient 0 5 10 15 20 25 30 0.0001 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t a =25c r ja =170c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =170 c/w
cystech electronics corp. spec. no. : c983s6r issued date : 2017.03.21 revised date : page no. : 7/ 9 mta090a02ks6r cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c983s6r issued date : 2017.03.21 revised date : page no. : 8/ 9 mta090a02ks6r cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note :1. all temperatures refer to topside of the package, measured on the package body surface. 2.for devices mounted on fr-4 pcb of 1.6mm or equivalent grade pcb. if other grade pcb is used, care should be taken to match the coeffici ents of thermal expansion between components and pcb. if they are not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly cools.
cystech electronics corp. spec. no. : c983s6r issued date : 2017.03.21 revised date : page no. : 9/ 9 mta090a02ks6r cystek product specification sot-363 dimension marking: millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 0.900 1.100 0.035 0.043 e1 2.150 2.450 0.085 0.096 a1 0.000 0.100 0.000 0.004 e 0.650 typ 0.026 typ a2 0.900 1.000 0.035 0.039 e1 1.200 1.400 0.047 0.055 b 0.150 0.350 0.006 0.014 l 0.525 ref 0.021 ref c 0.080 0.150 0.003 0.006 l1 0.260 0.460 0.010 0.018 d 2.000 2.200 0.079 0.087 0 8 0 8 e 1.150 1.350 0.045 0.053 notes : 1 .controlling dimension : millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material : ? lead : pure tin plated. ? mold compound : epoxy resin family, flammability solid burning class:ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . style: pin 1. source1 (s1) pin 2. gate1 (g1) pin 3. drain2 (d2) pin 4. source2 (s2) pin 5. gate2 (g2) 6-lead sot-363 plastic surface mounted package cystek package code: s6r pin 6. drain1 (d1) device code kac xx date code
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