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a microchip technology company ?2011 silicon storage technology, inc. ds75031a 10/11 data sheet www.microchip.com features ? high gain: ? typically 30 db gain across 2.4~2.5 ghz over tempera- ture 0c to +80c ? high linear output power: ? >26.5 dbm p1db ? meets 802.11g ofdm acpr requirement up to 23 dbm ? added evm ~4% up to 20 dbm for 54 mbps 802.11g signal ? meets 802.11b acpr requirement up to 24 dbm ? high power-added efficiency/low operating cur- rent for both 802.11g/b applications ? ~22% @ p out = 22 dbm for 802.11g ? ~26% @ p out = 23.5 dbm for 802.11b ? built-in ultra-low i ref power-up/down control ?i ref <4 ma ? low idle current ? ~60 ma i cq ? high-speed power-up/down ? turn on/off time (10%~90%) <100 ns ? typical power-up/down delay with driver delay included <200 ns ? high temperature stability ? ~1 db gain/power variation between 0c to +80c ? ~1 db detector variation over 0c to +80c ? low shut-down current (< 0.1 a) ? on-chip power detection ? 25 db dynamic range on-chip power detection ? simple input/output matching ? packages available ? 16-contact vqfn (3mm x 3mm) ? non-pb (lead-free) packages available applications ? wlan (ieee 802.11g/b) ? home rf ? cordless phones ? 2.4 ghz ism wireless equipment 2.4 ghz power amplifier sst12lp14 the sst12lp14 is a high-performance power amplifier ic based on the highly-reliable ingap/gaas hbt technology. easily configured for high-power, high-effi- ciency applications with superb power-added efficiency, it typically provides 30 db gain with 22% power added efficiency. the sst12lp14 has excellent linearity while meeting 802.11g spectrum mask at 23 dbm.it is ideal for the final stage power amplification in battery-powered 802.11g/b wlan transmitter applications, and is offered in 16-contact vqfn package. downloaded from: http:///
?2011 silicon storage technology, inc. ds75031a 10/11 2 2.4 ghz power amplifier sst12lp14 data sheet a microchip technology company product description the sst12lp14 is a high-performance power amplifier ic based on the highly-reliable ingap/ gaas hbt technology. the sst12lp14 can be easily configured for high-power, high-efficiency applications with superb power-added efficiency while operating over the 2.4~2.5 ghz frequency band. it typically provides 30 db gain with 22% power-added efficiency @ p out = 22 dbm for 802.11g and 27% power- added efficiency @ p out = 24 dbm for 802.11b. the sst12lp14 has excellent linearity, typically <4% added evm up to 20 dbm output power which is essential for 54 mbps 802.11g operation while meeting 802.11g spectrum mask at 23 dbm. the sst12lp14 also has wide-range (>25 db), temperature-stable (~1 db over 80c), sin- gle-ended/differential power detectors which lower users? cost on power control. the power amplifier ic also features easy board-level usage along with high-speed power-up/ down control. ultra-low reference current (total i ref <4 ma) makes the sst12lp14 controllable by an on/off switching signal directly from the baseband chip. these features coupled with low operat- ing current make the sst12lp14 ideal for the final stage power amplification in battery-powered 802.11g/b wlan transmitter applications. the sst12lp14 is off ered in 16-contact vqfn package. see figure 2 for pin assignments and table 1 for pin descriptions. downloaded from: http:///
?2011 silicon storage technology, inc. ds75031a 10/11 3 2.4 ghz power amplifier sst12lp14 data sheet a microchip technology company functional blocks figure 1: functional block diagram 2 56 8 16 vcc1 15 1 14 nc nc 49 11 1210 13 nc vccb vref1 vref2 det_ref vcc2rfout rfout det nc 3 rfinrfin nc bias circuit 7 1279 b1.1 downloaded from: http:///
?2011 silicon storage technology, inc. ds75031a 10/11 4 2.4 ghz power amplifier sst12lp14 data sheet a microchip technology company pin assignments figure 2: pin assignments for 16-contact vqfn pin descriptions table 1: pin description symbol pin no. pin name type 1 1. i=input, o=output function gnd 0 ground the center pad should be connected to rf ground with several low inductance, low resistance vias. nc 1 no connection unconnected pins. rfin 2 i rf input, dc decoupled rfin 3 i rf input, dc decoupled nc 4 no connection unconnected pins. vccb 5 power supply pwr supply voltage for bias circuit vref1 6 pwr 1st stage idle current control vref2 7 pwr 2nd stage idle current control det_ref 8 o on-chip power detector reference det 9 o on-chip power detector rfout 10 o rf output rfout 11 o rf output vcc2 12 power supply pwr power supply, 2nd stage nc 13 no connection unconnected pins. nc 14 no connection unconnected pins. nc 15 no connection unconnected pins. vcc1 16 power supply pwr power supply, 1st stage t1.0 75031 56 8 16 vcc1 15 14 nc nc 9 11 1210 13 nc vccb vref1 vref2 det_ref vcc2rfout rfout det 2 14 3 nc rfinrfin nc 7 1279 16-vqfn p1.1 top view (contacts facing down) rf and dc gnd 0 downloaded from: http:///
?2011 silicon storage technology, inc. ds75031a 10/11 5 2.4 ghz power amplifier sst12lp14 data sheet a microchip technology company electrical specifications the ac and dc specifications for the power amplifier interface signals. refer to table 3 for the dc voltage and current specifications. refer to figures 3 through 13 for the rf performance. absolute maximum stress ratings (applied conditions greater than those listed under ?absolute maximum stress ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. exposure to absolute maximum stress rating con- ditions may affect device reliability.) supply voltage at pins 5, 12, and 16 (v cc ).................................. -0.3v to +4.6v reference voltage to pin 6 (v ref1 ) and pin 7 (v ref2 ).......................... -0.3v to +3.6v dc supply current (i cc )...................................................... 500ma operating temperature (t a ) ............................................ -40oc to +85oc storage temperature (t stg )........................................... -40oc to +120oc maximum junction temperature (t j ) ........................................... +150oc surface mount solder reflow temperature: .............. ?with-pb? units 1 : 240c for 3 seconds 1. certain ?with-pb? package types are capable of 260c for 3 seconds; please consult the factory for the latest informa- tion. ................................................... ?non-pb? units: 260c for 3 seconds table 2: operating range range ambient temp v dd industrial -40c to +85c 3.3v t2.1 75031 table 3: dc electrical characteristics symbol parameter min. typ max. unit test conditions v cc supply voltage at pins 5, 12, 16 3.0 3.3 4.2 v i cc supply current for 802.11g, 24 dbm 290 ma for 802.11g, 25 dbm 340 ma i cq idle current for 802.11g to meet evm @ 20.5 dbm 55 ma i off shut down current 0.1 a v reg1 reference voltage for 1st stage, with 120 ? resistor 2.7 2.9 3.1 v v reg2 reference voltage for 2nd stage, with 360 ? resistor 2.7 2.9 3.1 v v reg1 reference voltage for 1st stage, with 220 ? resistor 2.9 3.1 3.3 v v reg2 reference voltage for 2nd stage, with 590 ? resistor 2.9 3.1 3.3 v t3.0 75031 downloaded from: http:///
?2011 silicon storage technology, inc. ds75031a 10/11 6 2.4 ghz power amplifier sst12lp14 data sheet a microchip technology company table 4: ac electrical characteristics for configuration symbol parameter min. typ max. unit f l-u frequency range 2400 2485 mhz p out output power @ pin = -7 dbm 11b signals 23 dbm @ pin = -10 dbm 11g signals 20 dbm g small signal gain 30 31 33 db g var1 gain variation over band (2400~2485 mhz) 0.5 db g var2 gain ripple over channel (20 mhz) 0.2 db acpr meet 11b spectrum mask 23 dbm meet 11g ofdm 54 mbps spectrum mask 22 dbm added evm @ 20 dbm output with 11g ofdm 54 mbps signal 3 % 2f, 3f, 4f, 5f harmonics at 22 dbm, without trapping capacitors -40 dbc t4.0 75031 downloaded from: http:///
?2011 silicon storage technology, inc. ds75031a 10/11 7 2.4 ghz power amplifier sst12lp14 data sheet a microchip technology company typical performance characteristics test conditions: v cc = 3.3v, t a = 25c figure 3: s-parameters figure 4: input return loss downloaded from: http:///
?2011 silicon storage technology, inc. ds75031a 10/11 8 2.4 ghz power amplifier sst12lp14 data sheet a microchip technology company figure 5: in-band gain flatness downloaded from: http:///
?2011 silicon storage technology, inc. ds75031a 10/11 9 2.4 ghz power amplifier sst12lp14 data sheet a microchip technology company typical performance characteristics test conditions: f1 = 2.45 ghz, f2 = 2.451 ghz figure 6: p out vs p in figure 7: im3vsp out downloaded from: http:///
?2011 silicon storage technology, inc. ds75031a 10/11 10 2.4 ghz power amplifier sst12lp14 data sheet a microchip technology company figure 8: detectors vs p out figure 9: gain vs p out figure 10: pae for two tone downloaded from: http:///
?2011 silicon storage technology, inc. ds75031a 10/11 11 2.4 ghz power amplifier sst12lp14 data sheet a microchip technology company typical performance characteristics test conditions: v cc = 3.3v, t a = 25c, f = 2.45 ghz, 54 mbps 802.11g ofdm signal figure 11: 802.11g spectrum at 22/23 dbm, dc current 210/240 ma figure 12: 802.11g added evm for 54 mbps 802.11g signal downloaded from: http:///
?2011 silicon storage technology, inc. ds75031a 10/11 12 2.4 ghz power amplifier sst12lp14 data sheet a microchip technology company figure 13: 802.11b spectrum at 24 dbm, dc current consumption 280 ma figure 14: typical schematic for high-power, high-efficiency 802.11b/g applications r1=120 , r2=360 and vreg1=vreg2=2.8~3.0v or r1=220 , r2=590 and vreg1=vreg2=2.9~3.3v 2 5 6 7 8 9 11 16 15 bias circuit 1 50 /150mil 50 rfout 10pf 10pf 2.4pf 50 /140mil 50 rfin vreg1 vreg2 14 13 4.7 f 0.1 f vcc 4 12 10 0.1 f 12nh/06 03 r2 360* r1 120 3 100pf 0.1 f det_ref det 10pf 10pf 2.0pf 100pf 100pf 1279 schematic.0.1 downloaded from: http:///
?2011 silicon storage technology, inc. ds75031a 10/11 13 2.4 ghz power amplifier sst12lp14 data sheet a microchip technology company product ordering information valid combinations for sst12lp14 sst12lp14 -qvc sst12lp14 -qvce sst12lp14 evaluation kits sst12lp14 -qvc-k sst12lp14 -qvce-k note: valid combinations are those products in mass production or will be in mass production. consult your sst sales representative to confirm availability of valid combinations and to determine availability of new combi- nations. sst 12 lp 14 - qvce xx xx xx - xxxx environmental attribute e 1 = non-pb contact (lead) finish package modifier c = 16 contact package type qv = vqfn product family identifier product type p = power amplifier voltage l = 3.0-3.6v frequency of operation 2 = 2.4 ghz product line 1 = rf product 1. environmental suffix ?e? denotes non-pb sol- der. sst non-pb solder devices are ?rohs compliant?. downloaded from: http:///
?2011 silicon storage technology, inc. ds75031a 10/11 14 2.4 ghz power amplifier sst12lp14 data sheet a microchip technology company packaging diagrams figure 15: 16-contact very-thin quad flat no-lead (vqfn) sst package code: qvc note: 1. complies with jedec jep95 mo-220j, variant veed-4 except external paddle nominal dimensions. 2. from the bottom view, the pin 1 indicator ma y be either a 45-degree chamfer or a half-circle notch. 3. the external paddle is electrically connected to the die back-side and possibly to certain v ss leads. this paddle can be soldered to the pc board; it is suggested to connect this paddle to the v ss of the unit. connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 4. untoleranced dimensions are nominal target dimensions. 5. all linear dimensions are in millimeters (max/min). 16-vqfn-3x3-qvc-2.0 1.7 0.5 bsc see notes 2 and 3 pin 1 0.300.18 0.075 1.7 0.2 0.05 max 0.450.35 1.000.80 pin 1 top view bottom view side view 1mm 3.00 0.075 3.00 0.075 downloaded from: http:///
?2011 silicon storage technology, inc. ds75031a 10/11 15 2.4 ghz power amplifier sst12lp14 data sheet a microchip technology company table 5: revision history revision description date 00 ? ds75031: sst conversion of data sheet gp1214 jan 2005 01 ? updated document status from preliminary specification to data sheet apr 2008 02 ? updated ?contact information? on page 12. feb 2009 a ? applied new document format ? released document under letter revision system ? updated spec number from s71279 to ds75031 oct 2011 ? 2011 silicon storage technology, inc?a microchip technology company. all rights reserved. sst, silicon storage technology, the sst logo, superflash, mtp, and flashflex are registered trademarks of silicon storage tech- nology, inc. mpf, sqi, serial quad i/o, and z-scale are trademarks of silicon storage technology, inc. all other trademarks and registered trademarks mentioned herein are the property of their respective owners. specifications are subject to change without notice. refer to www.microchip.com for the most recent documentation. for the most current package drawings, please see the packaging specification located at http://www.microchip.com/packaging. memory sizes denote raw storage capacity; actual usable capacity may be less. sst makes no warranty for the use of its products other than those expressly contained in the standard terms and conditions of sale. for sales office locations and information, please see www.microchip.com. silicon storage technology, inc. a microchip technology company www.microchip.com isbn:978-1-61341-699-0 downloaded from: http:///

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