2008. 9. 23 1/2 semiconductor technical data KTA1759 epitaxial planar pnp transistor revision no : 0 high voltage application. features ? high breakdown voltage. maximum rating (ta=25 ? ) dim a b d e g h k 4.70 max 2.50 0.20 1.70 max 0.45+0.15/-0.10 4.25 max 1.50 0.10 0.40 typ 1.75 max 0.75 min 1. base 2. collector (heat sink) 3. emitter 0.5+0.10/-0.05 sot-89 c j g d a c k j f millimeters h b e f 123 f d + _ + _ electrical characteristics (ta=25 ? ) *pulse test : pulse width z 300 s, duty cycle z 2% characteristic symbol rating unit collector-base voltage v cbo -400 v collector-emitter voltage v ceo -400 v emitter-base voltage v ebo -7 v collector current i c -100 ma collector power dissipation p c 500 mw p c * 1 w junction temperature t j 150 ? storage temperature range t stg -55 ?- 150 ? type name marking lot no. aa p c * : mounted on ceramic substrate (250 ? 2 ?? 0.85) characteristic symbol test condition min. typ. max. unit collector-base breakdown voltage v (br)cbo i c =-50 a, i e =0 -400 - - v collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b =0 -400 - - v emitter-base breakdown voltage v (br)ebo i e =-50 a, i c =0 -7.0 - - v collector cut off current i cbo v cb =-400v, i e =0 - - -10 a emitter cutoff current i ebo v eb =-6v, i c =0 - - -10 a dc current gain * h fe v ce =-10v, i c =-10ma 50 - 300 collector-emitter saturation voltage * v ce(sat) 2 i c =-20ma, i b =-2ma - - -0.5 v base-emitter saturation voltage * v be(sat) i c =-20ma, i b =-2ma - - -1.5 v
2008. 9. 23 2/2 KTA1759 revision no : 0 h fe - i c collector current i c (ma) -1 -3 -10 -30 dc current gain h fe 100 -100 -300 -1k 10 100 10 collector output capacitance 0.3 collector base voltage v cb (v) 3 1 0.1 10 13 30 100 30 c ob - v cb f=1mhz c ob (pf) collector current i c (ma) saturation voltage v be(sat) (mv) 300 100 13 10k 3k 1k 300 30 10 100 v be(sat) - i c 1k i /i =10 c b i /i =10 c b 30 saturation voltage v ce(sat) (mv) collector current i c (ma) 300 10 10 30 13 100 300 1k 3k 10k 30k 100k 30 100 v ce(sat) - i c 1k i =0 e v =-10v ce
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