[ o b s o l e t e p r o d u c t ] a g i l e n t h a s a n e w n a m e k e y s i g h t t e c h n o l o g i e s . k e y s i g h t t e c h n o l o g i e s i n c . i s t h e w o r l d ' s l e a d i n g e l e c t r o n i c m e a s u r e m e n t c o m p a n y , t r a n s f o r m i n g t o d a y ' s m e a s u r e m e n t e x p e r i e n c e t h r o u g h i n n o v a t i o n s i n w i r e l e s s , m o d u l a r , a n d s o f t w a r e s o l u t i o n s . w i t h i t s h p a n d a g i l e n t l e g a c y , k e y s i g h t d e l i v e r s s o l u t i o n s i n w i r e l e s s c o m m u n i c a t i o n s , a e r o s p a c e a n d d e f e n s e a n d s e m i c o n d u c t o r m a r k e t s w i t h w o r l d - c l a s s p l a t f o r m s , s o f t w a r e a n d c o n s i s t e n t m e a s u r e m e n t s c i e n c e . a l l d a t a s h e e t . c o m
features ? high output power: 21.0 dbm typical p 1 db at 2.0 ghz 20.5 dbm typical p 1 db at 4.0 ghz ? high gain at 1 db compression: 14.0 db typical g 1 db at 2.0 ghz 9.5 db typical g 1 db at 4.0 ghz ? low noise figure: 1.9 db typical nf o at 2.0 ghz ? high gain-bandwidth product: 8.0 ghz typical f t ? cost effective ceramic microstrip package 36 micro-x package description agilents at-42036 is a general purpose npn bipolar transistor that offers excellent high frequency performance. the at-42036 is housed in a cost effective surface mount 100 mil micro-x package. the 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. the 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. this device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the vhf, uhf, and microwave frequencies. an optimum noise match near 50 ? up to 1 ghz, makes this device easy to use as a low noise amplifier. the at-42036 bipolar transistor is fabricated using agilents 10 ghz f t self-aligned-transistor (sat) process. the die is nitride passi- vated for surface protection. excellent device uniformity, performance and reliability are produced by the use of ion- implantation, self-alignment techniques, and gold metalization in the fabrication of this device. agilent at-42036 up to 6 ghz medium power silicon bipolar transistor data sheet
2 at-42036 absolute maximum ratings [1] symbol parameter units absolute maximum v ebo emitter-base voltage v 1.5 v cbo collector-base voltage v 20 v ceo collector-emitter voltage v 12 i c collector current ma 80 p t power dissipation [2,3] mw 600 t j junction temperature c 150 t stg storage temperature [4] c -65 to 150 thermal resistance [2,5] : jc = 175 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 5.7 mw/ c for t c > 95 c. 4. storage above +150 c may tarnish the leads of this package making it difficult to solder into a circuit. 5. the small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. see measurements section thermal resistance for more information. electrical specifications t a = 25 c symbol parameters and test conditions [1] frequency units min. typ. max. |s 21e | 2 insertion power gain; v ce = 8 v, i c = 35 ma f = 2.0 ghz db 10.0 11.0 f = 4.0 ghz 5.0 p 1 db power output @ 1 db gain compression f = 2.0 ghz dbm 21.0 v ce = 8 v, i c = 35 ma f = 4.0 ghz 20.5 g 1 db 1 db compressed gain; v ce = 8 v, i c = 35 ma f = 2.0 ghz db 14.0 f = 4.0 ghz 9.5 nf o optimum noise figure: v ce = 8 v, i c = 10 ma f = 2.0 ghz db 2.0 f = 4.0 ghz 3.0 g a gain @ nf o ; v ce = 8 v, i c = 10 ma f = 2.0 ghz db 13.5 f = 4.0 ghz 10.0 f t gain bandwidth product: v ce = 8 v, i c = 35 ma ghz 8.0 h fe forward current transfer ratio; v ce = 8 v, i c = 35 ma 30 150 270 i cbo collector cutoff current; v cb = 8 v a 0.2 i ebo emitter cutoff current; v eb = 1 v a 2.0 c cb collector base capacitance [1] : v cb = 8 v, f = 1 mhz pf 0.28 note: 1. for this test, the emitter is grounded.
3 at-42036 typical performance, t a = 25 c frequency (ghz) figure 4. insertion power gain, maximum available gain and maximum stable gain vs. frequency. v ce = 8 v, i c = 35 ma. gain (db) 0.1 0.5 0.3 1.0 3.0 6.0 i c (ma) figure 2. output power and 1 db compressed gain vs. collector current and frequency. v ce = 8 v. 24 20 16 12 8 4 g 1 db (db) p 1 db (dbm) 01020304050 p 1db g 1db 2.0 ghz 2.0 ghz 4.0 ghz 4.0 ghz 40 35 30 25 20 15 10 5 0 msg mag |s 21e | 2 i c (ma) figure 1. insertion power gain vs. collector current and frequency. v ce = 8 v. 20 16 12 8 4 0 |s 21e | 2 gain (db) 0 1020 304050 1.0 ghz 2.0 ghz 4.0 ghz i c (ma) figure 3. output power and 1 db compressed gain vs. collector current and voltage. f = 2.0 ghz. 10 v 4 v 6 v 4 v 10 v 6 v 24 20 16 12 16 14 12 10 g 1 db (db) p 1 db (dbm) 0 1020 304050 p 1db g 1db frequency (ghz) figure 5. noise figure and associated gain vs. frequency. v ce = 8 v, i c = 10 ma. gain (db) 24 21 18 15 12 9 6 3 0 4 3 2 1 0 nf o (db) 0.5 2.0 1.0 3.0 4.0 5.0 g a nf o
4 at-42036 typical scattering parameters, common emitter, z o = 50 ? , t a =25 c, v ce =8 v, i c = 10 ma freq. s 11 s 11 s 21 s 21 s 21 s 12 s 12 s 12 s 22 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 0.1 .72 -46 28.3 26.09 152 -37.0 .014 73 .92 -14 0.5 .59 -137 20.9 11.13 102 -31.0 .028 44 .58 -27 1.0 .56 -171 15.4 5.91 80 -28.2 .039 47 .51 -29 1.5 .56 169 12.1 4.03 67 -26.6 .047 52 .50 -33 2.0 .58 155 9.7 3.06 55 -24.2 .062 55 .48 -38 2.5 .59 147 8.0 2.50 48 -22.6 .074 61 .47 -42 3.0 .61 137 6.5 2.10 38 -20.8 .092 65 .46 -51 3.5 .63 128 5.2 1.82 27 -19.6 .105 62 .47 -63 4.0 .63 117 4.0 1.60 17 -18.0 .126 57 .49 -72 4.5 .63 106 3.1 1.43 7 -16.5 .149 53 .51 -80 5.0 .64 93 2.3 1.30 -3 -15.4 .169 48 .52 -87 5.5 .67 79 1.5 1.19 -13 -14.3 .193 41 .51 -94 6.0 .72 70 0.6 1.07 -23 -13.4 .215 35 .46 -105 at-42036 typical scattering parameters, common emitter, z o = 50 ? , t a =25 c, v ce =8 v, i c = 35 ma freq. s 11 s 11 s 21 s 21 s 21 s 12 s 12 s 12 s 22 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 0.1 .50 -88 33.2 45.64 135 -42.0 .008 68 .77 -22 0.5 .52 -164 22.4 13.24 92 -32.8 .023 57 .45 -25 1.0 .53 174 16.6 6.75 76 -28.2 .039 63 .42 -26 1.5 .53 160 13.1 4.55 64 -25.6 .053 66 .41 -30 2.0 .55 148 10.8 3.45 53 -23.2 .069 65 .41 -36 2.5 .57 142 9.0 2.81 47 -21.6 .084 67 .39 -40 3.0 .59 134 7.5 2.37 37 -20.0 .101 64 .38 -49 3.5 .60 125 6.3 2.06 27 -18.4 .120 61 .39 -61 4.0 .60 116 5.2 1.81 17 -17.0 .141 57 .41 -71 4.5 .60 104 4.2 1.62 7 -16.0 .158 50 .43 -78 5.0 .61 92 3.4 1.47 -2 -14.9 .179 45 .44 -84 5.5 .64 79 2.6 1.35 -13 -14.1 .198 37 .43 -91 6.0 .69 70 1.7 1.21 -23 -13.2 .219 30 .38 -102 a model for this device is available in the device models section. at-42036 noise parameters, v ce =8 v, i c = 10 ma freq. nf o opt opt ghz db mag ang r n /50 0.1 1.0 .04 10 0.13 0.5 1.1 .04 66 0.12 1.0 1.3 .07 150 0.12 2.0 2.0 .20 -178 0.12 4.0 3.0 .51 -110 0.36
5 36 micro-x package dimensions 420 1 3 4 2 source source drain gate 2.15 (0.085) 2.11 (0.083) dia. 0.508 (0.020) 2.54 (0.100) 4.57 0.25 0.180 0.010 0.15 0.05 (0.006 0.002) notes: 1. dimensions are in millimeters (inches) 2. tolerances: in .xxx = 0.005 mm .xx = 0.13 0.56 (0.022) 1.45 0.25 (0.057 0.010) tape dimensions a b t c w f e p 2 10 pitches cumulative tolerance on tape 0.2 mm user feed direction p 0 d 0 cover tape t p 1 d 1 k description symbol size (mm) size (inches) length width depth pitch bottom hole diameter a b k p 1 d 1 5.77 0.10 6.10 0.10 1.70 0.10 8.00 0.10 1.50 min. 0.227 0.004 0.240 0.004 0.067 0.004 0.314 0.004 0.059 min. cavity diameter pitch position d 0 p 0 e 1.50 + 0.10/-0.05 4.00 0.10 1.75 0.10 0.059 + 0.004/-0.002 0.157 0.004 0.069 0.004 perforation width thickness w t 12.00 0.20 0.30 0.05 0.472 0.008 0.012 0.002 carrier tape cavity to perforation (width direction) cavity to perforation (length direction) f p 2 5.50 0.05 2.00 0.05 0.217 0.002 0.079 0.002 distance between centerline width tape thickness c t 9.30 0.10 0.065 0.010 0.366 0.004 0.0026 0.0004 cover tape part number ordering information part number devices per reel reel size AT-42036-TR1 1000 7 at-42036-blk 10 strip 12 mm 1 top view 1 indicates pin 1 orientation. 420 420 420 device orientation
www.semiconductor.agilent.com data subject to change. copyright ? 2001 agilent technologies, inc. obsoletes 5980-1854e october 31, 2001 5988-4735en
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