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| inchange semiconductor product specification silicon npn power transistors 2SC3591 description ? ? with to-220c package ? fast switching speed ? low collector saturation voltage applications ? high-definition crt display horizontal deflection output applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 400 v v ceo collector-emitter voltage open base 200 v v ebo emitter-base voltage open collector 6 v i c collector current 7 a i cm collector current-peak 12 a i b base current 4 a p c collector power dissipation t c =25 ?? 50 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon npn power transistors 2SC3591 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =1ma ; r be = ?t 200 v v (br)cbo collector-base breakdown voltage i c =1ma ; i e =0 400 v v (br)ebo emitter-base breakdown voltage i e =1ma ; i c =0 6 v v cesat collector-emitter saturation voltage i c =5a; i b =0.5a 0.8 v v besat base-emitter saturation voltage i c =5a; i b =0.5a 1.5 v i cbo collector cut-off current v cb =250v ;i e =0 100 | a i ebo emitter cut-off current v eb =5v; i c =0 100 | a h fe-1 dc current gain i c =1 a ; v ce =1v 15 h fe -2 dc current gain i c =5 a ; v ce =1v 10 50 f t transition frequency i c =0.5 a ; v ce =10v 10 mhz t f fall time v cc =50v;i c =5a; i b1 =-i b2 =0.5a ;r l =10 |? 0.3 | s inchange semiconductor product specification 3 silicon npn power transistors 2SC3591 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm) inchange semiconductor product specification 4 silicon npn power transistors 2SC3591 |
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