page:p2 - p 1 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. fe a tures ? small flat package. ? low saturation voltage vce(sat)= - 0.5v ? high speed switching time ? pc=1.0 to 2.0w z high saturation current capability maximum ratings ( t a =25 unless otherwise noted) par a met e r symbol v a lue uni t collector - base v ol t age v cbo 5 0 v collector - emitter v ol t age v ceo 5 0 v emitter - base v ol t age v ebo 5 v collector cur r ent - continuous i c 2 a peak base c urr e nt i bm 0.4 a collector power dissi p ation p c 1 w s torage t emp e r a ture t stg - 55to +150 electrical characteristics ( @ ta=25 unless otherw ise specified ) parameter s y mbol test conditions m in t yp m ax u nit collector cut - off current i cbo v c b =50 v ,i e =0 0.1 a emitter cut - off current i ebo v eb =5 v ,i c =0 0.1 a dc c urrent g ain h fe v c e =2 v ,i c =500ma 70 240 collector - e m itter saturation voltage v ce(s a t ) i c =1a, i b =50ma 0.5 v base - emitter saturation voltage v be(sat) i c =1a, i b =50ma 1.2 mv transition frequency f t v c e =2v,i c =0.5a f=100mhz 120 mhz collector output capacitance c ob v c b =10v,i e =0,f=1mhz 40 pf classifi c a tion of h fe ran k p q y range 8 2 - 180 1 20 - 270 180 - 390 marking p 1766 q 1766 y1766 2SC1766 ( n pn ) 1. base 2. collecto sot - 89 3. emitter
page:p2 - p 2 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. 2SC1766 typical characteristics
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