npn MJ1000 ? mj1001 29/10/2012 comset semiconductors 1 | 3 complementary power darlingtons the MJ1000, mj1001 are silicon epitaxial-bas transistors in monolithic darlington configuration, and are mounted in jedec to-3 metal case. they are intended for use in power linear and switching applications. their complementary pnp types are the mj900 and mj901 respectively. compliance to rohs absolute maximum ratings symbol ratings value unit v cbo collector-base voltage MJ1000 60 v mj1001 80 v ceo collector-emitter voltage i b =0 MJ1000 60 v mj1001 80 v ebo emitter-base voltage MJ1000 5.0 v mj1001 i c collector current i c(rms) MJ1000 8.0 a mj1001 i b base current MJ1000 0.1 a mj1001 p t power dissipation @ t c < 25 MJ1000 90 w derate above 25c mj1001 0.515 w/c t j junction temperature MJ1000 -65 to +200 c mj1001 t s storage temperature MJ1000 mj1001 thermal characteristics symbol ratings value unit r thj-c thermal resistance, junction to case 1.94 c/w
npn MJ1000 ? mj1001 29/10/2012 comset semiconductors 2 | 3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit v ceo collector-emitter breakdown voltage (*) i c =100 ma, i b =0 MJ1000 60 - - v mj1001 80 - - i ceo collector cutoff current v ce =30 v, i b =0 MJ1000 - - 500 a v ce =40 v, i b =0 mj1001 - - i ebo emitter cutoff current v be =5.0 v, i c =0 MJ1000 - - 2.0 ma mj1001 i cer collector-emitter leakage current v cb =60 v, r be =1.0 k ? MJ1000 - - 1.0 ma v cb =80 v r be =1.0 k ? mj1001 - - v cb =60 v r be =1.0 k ? t c =150c MJ1000 - - 5.0 v cb =80 v r be =1.0 k ? t c =150c mj1001 - - v ce(sat) collector-emitter saturation voltage (*) i c =3.0 a, i b =2 ma MJ1000 - - 2.0 v mj1001 i c =8.0 a, i b =40 ma MJ1000 - - 4.0 mj1001 v f forward voltage (pulse method) i f =3 a MJ1000 - 1.8 - v mj1001 v be base-emitter voltage (*) i c =3.0 a, v ce =3.0 v MJ1000 - - 2.5 v mj1001 h fe dc current gain (*) v ce =3.0 v, i c =3.0 a MJ1000 1000 - - - mj1001 v ce =3.0 v, i c =4.0 a MJ1000 750 - - mj1001 (*) pulse width 300 s, duty cycle 2.0%
npn MJ1000 ? mj1001 29/10/2012 comset semiconductors 3 | 3 mechanical data case to-3 revised september 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 11 13.10 b 0.97 1.15 c 1.5 1.65 d 8.32 8.92 f 19 20 g 10.70 11.1 n 16.50 17.20 p 25 26 r 4 4.09 u 38.50 39.30 v 30 30.30 pin 1 : base pin 2 : emitter case : collector
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