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| hexfet power mosfet notes through are on page 8 so-8 d1 d1 d2 d2 g1s2 g2 s1 top view 8 12 3 4 5 6 7 ! " ! # $ % &'() $ *$ ! ! "# $ % &$ ' #% $ &$( $ ( ( # %) * #&* & + % , & - # * (# ( - $$ # ) # ./ $ #+ % $( # & # # # & +% ( - $ $$ # ) # & ./ # & # - # * $ # ( * $ 0 1 ) v dss r ds(on) max i d 80v 73m @v gs = 10v 2.2a absolute maximum ratings parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 100c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t a = 25c maximum power dissipation w linear derating factor w/c dv/dt peak diode recovery dv/dt v/ns t j operating junction and c t stg storage temperature range thermal resistance parameter typ. max. units r jl junction-to-drain lead CCC 42 c/w r ja junction-to-ambient (pcb mount) CCC 62.5 max. 3.6 2.9 29 80 20 0.02 2.3 2.0 -55 to + 150 form quantity IRF7380Qtrpbf so-8 tape and reel 4000 eol 529 IRF7380Qpbf so-8 tube 95 eol 529 IRF7380Qpbf please search the eol part number on irs website for guidance base part number package type standard pack eol noti ce orderable part number replacement part number ) )#& 2 3 4 1 # *& 5 * #+ $ &* /' 2 3 downloaded from: http:/// IRF7380Qpbf 2 ) )#& 2 3 4 1 # *& 5 * #+ $ &* /' 2 3 s d g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 80 CCC CCC v v (br)dss / t j breakdown voltage temp. coefficient CCC 0.09 CCC v/c r ds(on) static drain-to-source on-resistance CCC 61 73 m v gs(th) gate threshold voltage 2.0 CCC 4.0 v i dss drain-to-source leakage current CCC CCC 20 a CCC CCC 250 i gss gate-to-source forward leakage CCC CCC 200 na gate-to-source reverse leakage CCC CCC -200 dynamic @ t j = 25c (unless otherwise specified) parameter min. typ. max. units gfs forward transconductance 4.3 CCC CCC s q g total gate charge CCC 15 23 q gs gate-to-source charge CCC 2.9 CCC nc q gd gate-to-drain ("miller") charge CCC 4.5 CCC t d(on) turn-on delay time CCC 9.0 CCC t r rise time CCC 10 CCC t d(off) turn-off delay time CCC 41 CCC ns t f fall time CCC 17 CCC c iss input capacitance CCC 660 CCC c oss output capacitance CCC 110 CCC c rss reverse transfer capacitance CCC 15 CCC pf c oss output capacitance CCC 710 CCC c oss output capacitance CCC 72 CCC c oss eff. effective output capacitance CCC 140 CCC avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current CCC CCC 3.6 a (body diode) i sm pulsed source current CCC CCC 29 a (body diode) v sd diode forward voltage CCC CCC 1.3 v t rr reverse recovery time CCC 50 CCC ns q rr reverse recovery charge CCC 110 CCC nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld ) typ. CCC CCC conditions v ds = 25v, i d = 2.2a i d = 2.2a v ds = 40v conditions v gs = 10v v gs = 0v v ds = 25v ? = 1.0mhz 75 2.2 mosfet symbol showing the integral reverse p-n junction diode. t j = 25c, i s = 2.2a, v gs = 0v t j = 25c, i f = 2.2a, v dd = 40v di/dt = 100a/ s conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 2.2a v ds = v gs , i d = 250 a v ds = 80v, v gs = 0v v ds = 64v, v gs = 0v, t j = 125c v gs = 20v v gs = -20v max. v gs = 0v, v ds = 1.0v, ? = 1.0mhz v gs = 0v, v ds = 64v, ? = 1.0mhz v gs = 0v, v ds = 0v to 64v v gs = 10v v dd = 40v i d = 2.2a r g = 24 downloaded from: http:/// IRF7380Qpbf 6 ) )#& 2 3 4 1 # *& 5 * #+ $ &* /' 2 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 v = i = gs d 10v 3.6a 3.0 4.0 5.0 6.0 7.0 v gs , gate-to-source voltage (v) 0 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 15v 20 s pulse width 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 3.7v 20 s pulse width tj = 150c vgs top 15v 10v 7.0v 5.0v 4.5v 4.3v 4.0v bottom 3.7v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.001 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 3.7v 20 s pulse width tj = 25c vgs top 15v 10v 7.0v 5.0v 4.5v 4.3v 4.0v bottom 3.7v t j , junction temperature (c) rds(on), drain-to-source on resistance (normalized) downloaded from: http:/// IRF7380Qpbf 3 ) )#& 2 3 4 1 # *& 5 * #+ $ &* /' 2 3 fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 v = 0 v gs t = 150 c j t = 25 c j 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec fig 8. maximum safe operating area 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 2 4 6 8 10 12 14 16 q g total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 64v v ds = 40v v ds = 16v i d = 2.1a v sd , source-to-drain voltage (v) i sd , reverse drain current (a) downloaded from: http:/// IRF7380Qpbf ) )#& 2 3 4 1 # *& 5 * #+ $ &* /' 2 3 fig 11. maximum effective transient thermal impedance, junction-to-case fig 10a. switching time test circuit v ds 90%10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms 1 0.1 % + - fig 9. maximum drain current vs. ambient temperature 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 i , drain current (a) d t a , ambient temperature (c) 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) downloaded from: http:/// IRF7380Qpbf 7 ) )#& 2 3 4 1 # *& 5 * #+ $ &* /' 2 3 fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 14a&b. basic gate charge test circuit and waveform fig 15a&b. unclamped inductive test circuit and waveforms fig 15c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 8 q g q gs q gd v g charge t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 40 80 120 160 200 i d top bottom 1.0a 1.8a 2.2a 0 5 10 15 20 25 30 i d , drain current (a) 50 55 60 65 70 75 80 85 90 95 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) v gs = 10v 3.0 5.0 7.0 9.0 11.0 13.0 15.0 v gs, gate -to -source voltage (v) 0 100 200 300 400 500 600 700 800 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 3.6a starting t j , junction temperature (c) e as , single pulse avalanche energy (mj) downloaded from: http:/// IRF7380Qpbf 9 ) )#& 2 3 4 1 # *& 5 * #+ $ &* /' 2 3 so-8 package outline (mosfet & fetky) e1 de y b aa1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 b asic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches mi n max dim 8 e c .0075 .0098 0.19 0.25 .025 bas ic 0.635 b as ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 8x 1.78 [ .070 ] 4. out li ne conf orms t o je de c ou t l ine ms -012aa. not es : 1. dime ns ioning & t olerancing pe r as me y14.5m-1994. 2. cont rol l ing dime ns ion: mill ime t er 3. dime ns ions are s hown in mil l imet e rs [inche s ]. 5 dime ns ion doe s not incl ude mol d prot rus ions . 6 dime ns ion doe s not incl ude mol d prot rus ions . mold prot rus ions not t o exceed 0.25 [.010]. 7 dime ns ion is t he l e ngt h of l ead f or s ol dering t o a subst rat e. mold prot rus ions not t o exceed 0.15 [.006]. dimensions are shown in milimeters (inches) so-8 part marking information p = disgnates lead - free example: this is an irf7101 (mos fet ) f 7101 xxxx international logo rect ifier part number lot code product (optional) dat e code (yww) y = last digit of the year ww = we e k a = assembly site code notes: 1. for an automotive qualified version of this part please see http://www.irf.com/product-info/auto/ 2. for the most current drawing please refer to ir website at http://www.irf.com/package/ downloaded from: http:/// IRF7380Qpbf / ) )#& 2 3 4 1 # *& 5 * #+ $ &* /' 2 3 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reeldimensions are shown in millimeters (inches) repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 31mh r g = 25 , i as = 2.2a. pulse width 400 s; duty cycle 2%. when mounted on 1 inch square copper board. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss. i sd 2.2a, di/dt 220a/ s, v dd v (br)dss ,t j 150c. for the most current drawing please refer to ir website at http://www.irf.com/package/ downloaded from: http:/// IRF7380Qpbf : ) )#& 2 3 4 1 # *& 5 * #+ $ &* /' 2 3 ;) $ ( < ()' %' ! : 23 ' = # # 4 1 # ' $ ( $>??) )#&?.# ? ? qualification standards can be found at international rectifiers web site http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release. msl1 (per jedec j-std-020d ?? ) rohs compliant qualification information ? qualification level industrial ? (per jedec jesd47f ?? guidelines) yes moisture sensitivity level so-8 date comments ? updated the rthja from 50c/w to 62.5c/w, on page 1. ? converted the data sheet to ir corproate template. 9/8/2014 ? added ordering information and updated to reflect the end-of-life (eol notice #529) on page1. revision history 9/16/2013 downloaded from: http:/// |
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