2014. 3. 31 1/3 semiconductor technical data kta701e epitaxial planar pnp transistor revision no : 3 general purpose application. switching application. features h a super-minimold package houses 2 transistor. h excellent temperature response between these 2 transistor. h high pairing property in h fe . h the follwing characteristics are common for q 1 , q 2 . maximum rating (ta=25 ? ) electrical characteristics (ta=25 ? ) characteristic symbol rating unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v collector current i c -150 ma base current i b -30 ma collector power dissipation p c * 200 mw junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit. collector cut-off current i cbo v cb =-50v, i e =0 - - -0.1 u emitter cut-off current i ebo v eb =-5v, i c =0 - - -0.1 u dc current gain h fe (note) v ce =-6v, i c =-2 v 120 - 400 collector-emitter saturation voltage v ce(sat) i c =-100 v , i b =-10 v - -0.1 -0.30 v transition frequency f t v ce =-10v, i c =-1 v 80 - - ? collector output capacitance c ob v cb =-10v, i e =0, f=1 ? - 4 7 ? noise figure nf v ce =-6v, i c =-0.1 v , f=1 , rg=10 ? - 1.0 10 f * total rating note : h fe classification y(4):120 q 240, gr(6):200 q 400 equivalent circuit (top view) marking
2014. 3. 31 2/3 kta701e revision no : 3
2014. 3. 31 3/3 kta701e revision no : 3
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