jiangsu changjiang electron ics technology co., ltd sot-23 -3l plastic-encapsulate mosfets CJK3415 p-channel 20-v(d-s) mosfet feature excellent r ds(on) , low gate charge,low gate voltages applications load switch and in pwm applicatopns marking: r15 maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds -20 gate-source voltage v gs 8 v continuous drain current (t 10s) i d -4.0 a maximum power dissipation (t 10s) p d 0.30 w thermal resistance from junction to ambien t r ja 417 /w operating junction temperatur e t j 150 storage temperature t stg -55 ~+150 d s g v (br)dss r ds(on) max i d -20v 50m @ -4.5v ? -4.0a? m @-1 . 8v 60m -2.5v ? @ 73 so t -23-3l 1. gate 2. source 3. drain d equivalent circuit www.cj-elec.com 1 d , a ug , 2015 p-channel 20v(d-s) mosfet
parameter symbol te st condition min typ max units static parameters drain-source br eakdown voltage v (br) dss v gs = 0v, i d =-250a -20 gate threshold voltage v gs(th) v ds =v gs , i d =-250a -0.3 -0.56 -1 v v ds =0v, v gs =8v 10 gate-body leakage current i gss v ds =0v, v gs =4.5v 1 zero gate voltage dra in current i dss v ds =-16v, v gs =0v -1 a v gs =-4.5v, i d =-4a 0.037 0.050 v gs =-2.5v, i d =-4a 0.045 0.060 drain-source on-state resistance(note 2 ) r ds (on) v gs =-1.8v, i d =-2a 0.056 0.073 ? forwa rd transconductance(note2) g fs v ds =-5v, i d =-4a 8 s body diode vol tage(note2) v sd i s =-1a,v gs =0v -1 v dynamic paramete rs (note3) input capacitance c iss 1450 output capacitance c oss 205 reverse transfer capacitance c rss v ds =-10v,v gs =0v,f =1mhz 160 pf gate resistance r g v ds =0v,v gs =0v,f =1mhz 6.5 ? switching parameters total gate charge q g 17.2 gate-source charge q gs 1.3 gate-drain charge q gd v ds =-10v,v gs =-4.5v,i d =-4a 4.5 nc turn-on delay t ime (note3) t d(on) 9.5 turn-on rise time(note3) t r 17 turn-off delay t ime(note3) t d(off) 94 turn-off fall time(note3) t f v ds =-10v, v gs =-4.5v r gen =3 ?, r l =2.5 ? , 35 ns notes: 1. repetitive rating,pulse width lim ited by junction temperature. 2. pulse test : pulse width 300s, duty cycle 2%. 3. these parameters have no way to verify. www.cj-elec.com 2 d ,a ug ,2015 mosfet electrical characteristics t =25 unless otherwise specified a
-0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -0 -5 -10 -15 -20 -0 -2 -4 -6 -8 -10 30 40 50 60 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1e-5 -1e-4 -1e-3 -0.01 -0.1 -1 -10 25 50 75 100 125 -0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -2 -3 -4 -5 -6 -7 -8 -9 -10 20 30 40 50 60 70 80 v gs =-8.0v -4.5v -2.5v -2.0v drain current i d (a) drain to source voltage v ds (v) pulsed v gs =-1.5v gate to source voltage v gs (v) on-resistance r ds(on) (m ? ) i d =-4a ta=25 pulsed v gs ?? r ds(on) drain current i d (a) gate to source voltage v gs (v) v ds =-16v pulsed t a =100 t a =25 transfer characteristics source current i s (a) source to drain voltage v sd (v) ta=25 pulsed v sd i s ?? output characteristics threshold voltage v th (v) junction temperature t j ( ) i d =-250ua threshold voltage vgs=-1.8v vgs=-2.5v vgs=-4.5v ta=25 pulsed i d ?? r ds(on) on-resistance r ds(on) (m ? ) drain current i d (a) 7 \ s l f d o & k d u d f w h u l v w l f v
3 d ,aug,2015
d,aug,2015 min. max. min. max. a 1.050 1.250 0.041 0.049 a1 0.000 0.100 0.000 0.004 a2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 c 0.100 0.200 0.004 0.008 d 2.820 3.020 0.111 0.119 e1 1.500 1.700 0.059 0.067 e 2.650 2.950 0.104 0.116 e e1 1.800 2.000 0.071 0.079 l 0.300 0.600 0.012 0.024 080 8 symbol dimensions in millimeters dimensions in inches 0.950(bsc) 0.037(bsc)
d,aug,2015
|
