2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212 ) 227-600 5 fax : (973 ) 376-896 0 technical data np n silico n mediu m powe r transisto r qualified per mil-prf-19500/207 devices 2n148 3 2n148 4 2n148 5 2n148 6 maximu m rating s rating s collector-emitte r voltag e collector-bas e voltag e emitter-bas e voltag e co l lecto r curren t continuou s tol a i powe r dissipatio n (01 t a = 25" c (l ) (a)t c = 25"c (2 ) operatin g & storag e junctio n temperatur e rang e symbo l vr|.; o vrn o v | |)( ) i c p , tj . t st r 2n148 3 2n148 5 4 0 6 0 2n148 4 2n148 6 5 5 10 0 1 2 3. 0 1.7 5 2 5 -6 5 t o +20 0 uni t vd c vd c vd c ad c w w " c 1 ) derat e linearl y 0.01 0 w/' c fo r t a > 25 c 2) derat e linearl y 0.14 3 w/" c fo r t v > 25" c electrica l characteristic s i i to-8 * se e appendi x a fo r packag e outlin e characteristic s symbo l | min . | max . | uni t of f characteristic s c.'ollector-emilte r breakdow n voltag e 1 , = 10 0 mad c 2n1483 , 2n148 5 2 n 1 484 , 2 n i48 6 collector-bas e breakdow n voltag e 1 , = 10 0 nad c 2n1483 , 2n148 5 2 n 1 484 , 2 n 148 6 collector-emitte r breakdow n voltag e v , ? = 1. 5 vdc , i r = 0.2 5 mad c 2ni483 , 2ni48 5 2 n 1 484 , 2 n i48 6 collector-bas e cutof f curren t v , ? ? = 3 0 vd c 2 n 1 483 , 2 n 1 48 5 v,| , = 5(ivd c 2 n 1 484 , 2 n 148 6 emitter - bas e cutof f curren t vm = 1 2 vd c v(|!r)c | ( ) v(mr) ( h o v(hk)c i x ich o ' i n o 4 0 5 5 6 0 10 0 6 0 10 0 1 5 1 5 1 5 vd c vd c vd c (.lad c ( t ad c qualit y semi-conductor s downloaded from: http:///
u na. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212 ) 227-600 5 fax : (973 ) 376-896 0 2n1483,2N1484,2n1485,2n148 6 jan serie s electrica l characteristic s (coitt ) characteristic s symbo l min . max . uni t o n characteristics ' forward-curren t transfe r rati o i , = 75 0 madc , v , , = 4. 0 vd c 2 n 1483 , 2n148 4 2 n 1 485 , 2 n 148 6 collector-emitte r saturatio n voltag e v = 75 0 madc , i, , = 7 5 mad c 2n1483 , 2n148 4 1 < = 75 0 madc , i, , = 4 0 mad c 2n1485 , 2n148 6 base-emitte r voltag e i c = 75 0 madc , v n ; = 4. 0 vd c h,i , vvl ; (s?i ) v m 2 0 3 5 6 0 10 0 1.2 0 0.7 5 2 0 vd c vdc dynami c characteristic s forwar d curren t transfe r rati o l ( = 5. 0 madc , v n , = 2 8 vd c outpu t capacitanc e v n , = 1 0 vdc , 1 , = 0 , 10 0 kh z < f < 1. 0 mh z i hit . clh h 60 0 40 0 kh / p f switchin g characteristic s turn-o n tim e v , ( = 1 2 vdc ; r , = 15. 9 q ; ],?, = 1,, 2 = 3 5 madc ; i m = 6 5 mad c 'o n + 'of f 2 5 u s (3 ) puls e test : puls e widt h = 300p.s , dut y cycl e < 2.0% . qualit y semi-conductor s downloaded from: http:///
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