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2015. 5. 12 1/2 semiconductor technical data BAV99C silicon epitaxial planar diode revision no : 0 ultra high speed switching application. features h small package : sot-23(1). maximum rating (ta=25 ? ) 1. cathode 12. anode 2 3. anode 1 / cathode 2 2 1 3 dim millimeters sot-23(1) a bc d e 2.90 0.1 1.30+0.20/-0.150.40+0.15/-0.05 2.40+0.30/-0.20 g1 . 9 0 j k l m n 0.10 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 g a n c b d 1.30 max ll + _ electrical characteristics (ta=25 ? ) type name marking lot no. h8c characteristic symbol test condition min. typ. max. unit reverse voltage v r i r =100ua 80 - - v forward voltage v f(1) i f =1ma - 0.61 0.65 v v f(2) i f =10ma - 0.74 0.8 v f(3) i f =150ma - - 1.25 reverse current i r v r =80v - - 0.5 a total capacitance c t v r =0, f=1mhz - - 4 pf characteristic symbol rating unit reverse voltage v r 80 v continuous forward current i f 100 ma surge current (10ms) i fsm 1 a power dissipation p d 225* mw junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? * note1 : package mounted on fr-5 board (25.4 ? 19.05 ? 1.57mm) downloaded from: http:///
2015. 5. 12 2/2 BAV99C revision no : 0 1 0.2 reverse voltage v (v) r r t c - v reverse current i ( a) r 10 0 reverse voltage v (v) r total capacitance c (pf) 0 i - v i - v f forward voltage v (v) 0 f 10 forward current i (ma) ff 0.2 0.4 0.6 0.8 1.0 1.2 -2 -1 10 2 10 3 10 1 ta=100 c ta=25 c ta=-25 c rr 20 40 60 80 -3 -2 10 -1 10 1 10 ta=100 c ta=75 c ta=50 c ta=25 c t 0.5 1.0 1.5 2.0 2.5 3 10 30 100 200 f=1mhz ta=25 c 10 downloaded from: http:///

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