vs-80apf0..pbf series, vs-80apf0..-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 1 document number: 93722 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fast soft recovery r ectifier diode, 80 a features ? glass passivated pellet chip junction ? 150 c max. operating junction temperature ? low forward voltage drop and short reverse recovery time ? designed and qualified according to jedec ? -jesd 47 ? material categorization: ? for definitions of compliance please see www.vishay.com/doc?99912 applications these devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted emi should be met. description the vs-80apf0... soft recovery rectifier seri es has been optimized for combined short reverse recovery time and low forward voltage drop. the glass passivation ensures st able reliable operation in the most severe te mperature and power cycling conditions. product summary package to-247ac i f(av) 80 a v r 200 v, 400 v, 600 v v f at i f 1.25 v i fsm 1000 a t rr 70 ns t j max. 150 c diode variation single die snap factor 0.5 base cathode + 2 13 a node -- anode to-247ac available major ratings and characteristics symbol characteristics values units v rrm 200 to 600 v i f(av) sinusoidal waveform 80 a i fsm 1000 t rr 1 a, - 100 a/s 70 ns v f 40 a, t j = 25 c 1.1 v t j range -40 to +150 c voltage ratings part number v rrm , maximum peak reverse voltage v v rsm , maximum non- repetitive peak reverse voltage v i rrm at 150 c ma vs-80apf02pbf, vs-80apf02-m3 200 300 17 vs-80apf04pbf, VS-80APF04-M3 400 500 vs-80apf06pbf, vs-80apf06-m3 600 700
vs-80apf0..pbf series, vs-80apf0..-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 2 document number: 93722 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) t c = 95 c, 180 conduction half sine wave 80 a maximum peak one cycle ? non-repetitive surge current i fsm 10 ms sine pulse, rated v rrm applied 850 10 ms sine pulse, no voltage reapplied 1000 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 3610 a 2 s 10 ms sine pulse, no voltage reapplied 5100 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied 51 000 a 2 ? s electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm 80 a, t j = 25 c 1.25 v forward slope resistance r t t j = 150 c 3.5 m ? threshold voltage v f(to) 0.85 v maximum reverse leakage current i rm t j = 25 c v r = rated v rrm 0.1 ma t j = 150 c 17 recovery characteristics parameter symbol test conditions values units reverse recovery time t rr i f at 40 a pk ? 25 a/s ? 25 c 190 ns reverse recovery current i rr 3.4 a reverse recovery charge q rr 0.5 c snap factor s 0.5 thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage ? temperature range t j , t stg -40 to +150 c maximum thermal resistance, ? junction to case r thjc dc operation 0.35 c/w maximum thermal resistance, ? junction to ambient r thja 40 typical thermal resistance, ? case to heatsink r thcs mounting surface, smooth, and greased 0.2 approximate weight 6g 0.21 oz. mounting torque minimum 6 (5) kgf cm (ibf in) maximum 12 (10) marking device case style to-247ac 80apf02 80apf04 80apf06 i fm t rr di dt i rm(rec) q rr t
vs-80apf0..pbf series, vs-80apf0..-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 3 document number: 93722 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current rati ng characteristics fig. 2 - current rati ng characteristics fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current 150 0 maximum allowable case temperature (c) average forward current (a) 10 90 20 90 110 120 100 30 50 130 70 40 80 80 60 r thjc (dc) = 0.35 k/w conduction angle 30 60 90 120 180 140 ? 150 060 maximum allowable case temperature (c) average forward current (a) 100 110 140 120 20 40 130 140 100 80 120 80 r thjc (dc) = 0.35 k/w ? conduction period 30 60 90 120 180 dc 90 20 0 140 0 maximum average forward power loss (w) average forward current (a) 50 80 90 120 60 20 30 10 40 60 40 70 180 120 90 60 30 conduction angle rms limit t j = 150 c 80 100 ? 20 0 180 0 maximum average forward power loss (w) average forward current (a) 80 140 40 20 60 60 120 40 100 140 100 120 80 dc 180 120 90 60 30 t j = 150 c ? conduction period rms limit 160 900 1 10 100 peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) 400 200 300 500 700 600 800 at any rated load condition and with rated v rrm applied following surge. initial t j = 150 c at 60 hz 0.0083 s at 50 hz 0.0100 s 1000 300 0.01 0.1 peak half sine wave forward current (a) pulse train duration (s) 600 200 400 500 800 1000 1 700 900 maximum non-repetitive surge current versus pulse train duration. initial t j = 150 c no voltage reapplied rated v rrm reapplied
vs-80apf0..pbf series, vs-80apf0..-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 4 document number: 93722 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - forward voltage drop characteristics fig. 8 - recovery time characteristics, t j = 25 c fig. 9 - recovery time characteristics, t j = 150 c fig. 10 - recovery charge characteristics, t j = 25 c fig. 11 - recovery charge characteristics, t j = 150 c 1000 10 1 0 1.5 3.0 instantaneous forward current (a) instantaneous forward voltage (v) 100 0.5 2.5 4.0 80epf.. series t j = 25 c t j = 150 c 1.0 2.0 3.5 0.22 0.04 0 40 120 200 t rr - typical reverse recovery time (s) di/dt - rate of fall of forward current (a/s) 0.12 0.08 0.18 160 0.14 0.10 0.06 0.16 80 t j = 25 c i fm = 1 a i fm = 10 a i fm = 20 a i fm = 40 a i fm = 125 a i fm = 80 a 0.20 0 0 80 120 160 200 t rr - typical reverse recovery time (s) di/dt - rate of fall of forward current (a/s) 0.3 0.4 0.2 0.6 40 t j = 150 c i fm = 1 a i fm = 10 a i fm = 20 a i fm = 40 a i fm = 80 a 0.5 0.1 0 0 80 120 200 q rr - typical reverse recovery charge (c) di/dt - rate of fall of forward current (a/s) 3.0 1.0 2.0 4.0 160 40 t j = 25 c i fm = 125 a i fm = 1 a i fm = 10 a i fm = 20 a i fm = 40 a i fm = 80 a 3.5 2.5 1.5 0.5 0 0 80 120 160 200 q rr - typical reverse recovery charge (c) di/dt - rate of fall of forward current (a/s) 2 4 6 8 14 40 t j = 150 c i fm = 80 a i fm = 40 a i fm = 20 a i fm = 10 a i fm = 1 a 10 12
vs-80apf0..pbf series, vs-80apf0..-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 5 document number: 93722 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 12 - recovery curre nt characteristics, t j = 25 c fig. 13 - recovery current characteristics, t j = 150 c fig. 14 - thermal impedance z thjc characteristics 22 0 0 80 120 160 200 i rr - typical reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 10 20 4 14 40 i fm = 125 a i fm = 80 a i fm = 40 a i fm = 20 a i fm = 10 a i fm = 1 a t j = 25 c 18 16 12 8 6 2 20 0 0 40 120 160 200 i rr - typical reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 40 10 30 80 t j = 150 c 5 15 25 35 45 i fm = 80 a i fm = 40 a i fm = 20 a i fm = 10 a i fm = 1 a 0.01 0.0001 0.001 0.01 0.1 square wave pulse duration (s) z thjc - transient thermal impedance (k/w) 0.1 1 10 steady state value (dc operation) 80epf.. series single pulse d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 1
vs-80apf0..pbf series, vs-80apf0..-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 6 document number: 93722 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-80apf02pbf 25 500 antistatic plastic tubes vs-80apf02-m3 25 500 antistatic plastic tubes vs-80apf04pbf 25 500 antistatic plastic tubes VS-80APF04-M3 25 500 antistatic plastic tubes vs-80apf06pbf 25 500 antistatic plastic tubes vs-80apf06-m3 25 500 antistatic plastic tubes links to related documents dimensions www.vishay.com/doc?95542 part marking information to-247ac pbf www.vishay.com/doc?95226 to-247ac -m3 www.vishay.com/doc?95007 02 = 200 v 04 = 400 v 06 = 600 v 2 - current rating (80 = 80 a) 1 - vishay semiconductors product 3 - circuit configuration: a = single diode, 3 pins 4 - package: p = to-247ac 5 - type of silicon: f = fast recovery 6 - voltage code x 100 = v rrm - environmental digit: 7 pbf = lead (pb)-free and rohs-compliant -m3 = halogen-free, rohs-compliant, and terminations lead (pb)-free device code 5 1 3 2 4 6 7 80 vs- a p f 06 pbf
outline dimensions www.vishay.com vishay semiconductors revision: 21-apr-15 1 document number: 95542 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-247 - 50 mils l/f dimensions in millimeters and inches notes (1) dimensioning and tolerancing per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish unc ontrolled in l1 (6) ? p to have a maximum draft an gle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jedec ? outline to-247 with exception of dimension c and q symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.35 0.020 0.053 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.17 1.37 0.046 0.054 e1 13.46 - 0.53 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 ? k 0.254 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.34 0.065 0.092 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.89 0.015 0.035 ? p1 - 7.39 - 0.291 c1 0.38 0.84 0.015 0.033 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 0.178 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc 0.10 a c m m e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c ? k b d m m a (6) p (datum b) p1 d1 (4) 4 e1 0.01 b d m m view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) plating
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