thyristor-thyristor modules stt165gk ; ;b type stt165gk08b stt165gk12b stt165gk14b stt165gk16b stt165gk18b stt165gk20b STT165GK22B v rrm v drm v 800 1200 1400 1600 1800 2000 2200 v rsm v dsm v 900 1300 1500 1700 1900 2100 2300 dimensions in mm (1mm=0.0394") symbol test conditions maximum ratings unit t vj =t vjm t c =85 o c; 180 o sine 300 165 a t vj =45 o c t=10ms (50hz), sine v r =0 t=8.3ms (60hz), sine t vj =t vjm t=10ms(50hz), sine v r =0 t=8.3ms(60hz), sine 6000 6400 5250 5600 a i tsm , i fsm t vj =45 o c t=10ms (50hz), sine v r =0 t=8.3ms (60hz), sine t vj =t vjm t=10ms(50hz), sine v r =0 t=8.3ms(60hz), sine 180000 170000 137000 128000 a 2 s i 2 dt (di/dt) cr 150 500 a/us (dv/dt) cr t vj =t vjm ; v dr =2/3v drm r gk = ; method 1 (linear voltage rise) 1000 v/us p gm t vj =t vjm t p =30us i t =i tavm t p =500us 120 60 w p gav 8 w i trms , i frms i tavm , i favm o c t vj t vjm t stg -40...+125 125 -40...+125 v isol 50/60hz, rms t=1min i isol <1ma t=1s 3000 3600 v~ m d mounting torque (m6) terminal connection torque (m6) _ 2.25-2.75/20-25 4.5-5.5/40-48 nm/lb.in. weight 173 g t vj =t vjm repetitive, i t =500a f=50hz, t p =200us v d =2/3v drm i g =0.5a non repetitive, i t =i tavm di g /dt=0.5a/us v rgm 10 v typ ical p1 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
t h yristo r -t h yristor modules stt165gk ; ; b symbol t est conditions characteristic v alues unit v v t , v f i t , i f a t vj 5 o c 16 v t o f or o er-loss calculations only t vj t vjm v r t 16 m v d 6 v t vj 5 o c t vj - o c v gt 6 v v d 6 v t vj 5 o c t vj - o c i gt 15 ma v gd t vj t vjm v d v drm 5 v i gd 1 ma i h t vj 5 o c v d 6 v r gk 15 ma t vj 5 o c t us v d 6v i g 5a di g dt5aus ma i l er t h y r istordiode dc current er module r thjc 155 5 k er t h y r istordiode dc current er module r thjk 5 115 k d s creeing distance on sur ace 1 mm d a creeage distance in air 6 mm a mai m um all o a b le accele r ation 5 ms i rrm , i drm t vj t vjm v r v rrm v d v drm ma t vj 5 o c v d 1v drm i g 5a di g dt5aus t gd us t vj t vjm i t 16a t us -didt1aus ty v r 1 v ddtvus v d v drm t q 15 us uc q s t vj t vjm i t , i f a -didt5aus 55 i rm 5 a a d v an t a ges
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& r s s h u e d v h s o d w h p2 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
0 0 p tav i tav 50 w a fig.1l power dissipation per thyristor vs. on-state current 0 0 p tav 50 w 100 100 fig.1r power dissipation per thyristor vs. ambient t e mp t a c o 150 k/w r th(j-a) 0 0 pvtot i rms 100 w a fig.2l power dissipation per module vs. rms current 100 0 0 50 w 100 fig.2r power dissipation per module vs. case temp t a c o c o 150 k/w r th(c - a) pvtot 2 stt 165b . 2 st d 165b 0 0 pvtot w a fig.3l power dissipation of two modules vs. direct current 100 i d 0 0 50 w 100 fig.3 r power dissipation of two modules vs. case temp t a t c c o c o 150 k/w pvtot r th(c-a) r 200 100 100 150 1/2 . stt165b 1/2 . std165b rec. 15 30 60 90 120 sin. 180 rec. 180 cont. 300 400 200 200 300 1 stt165b 1 std165b . t c 100 200 300 400 200 300 200 200 500 400 500 125 116 107 98 89 1000 400 l 1000 125 116 107 98 89 80 0.08 300 300 2.5 2 1.6 1.2 1 0.8 0.7 0.6 0.5 0.45 0.4 0.35 0.3 0.25 0.2 80 1 0.8 0.5 0.6 0.4 0.3 0.25 0.2 0.17 0.14 0.1 0.12 0.07 0.04 0.02 200 400 600 800 1200 200 400 600 800 1200 71 0.5 0.4 0.3 0.25 0.2 0.16 0.12 0.1 0.06 0.07 0.04 0.02 0.05 0.03 thyristor-thyristor modules stt165gk ; ;b p3 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
stt . 3 std165b 165b . 0 0 p vto t pvtot i rms 100 200 w a f ig.4l power dissipation of three modules vs. direct and rms current 50 0 i d w 3 b 6 0 0 50 w 100 fig.4r power dissipation of three modules vs. case temp t a t c c o c o 150 k/w 500 3 s tt b . s td b . 10 a/us fig.5 recovered charge vs. current decrease 100 1 /2 1 /2 uc tvj= c o 0 0.001 0.01 k/w 100 fig.6 transient thermal impedance vs. time t zth stt b std b . 1 /2 1 /2 . zth(j-s) zth( j -c) 0.1 1 10 s stt b . std 165 165 b . 0 0 100 200 fig.7 on-st ate charactristics 1 /2 1 /2 a i t vt 0.5 1 1.5 2 v typ. max. fig.8 surge overload current vs. time i tm= 1 t 10 100 ms 1000 0.4 0.6 0.8 1 1.2 1.4 1.6 i t(ov) i tsm 2 stt b std165 165 b . 1 /2 1 /2 . 1 v rrm . 0.5 v rrm . 0 v rrm . i tsm(25 c) =5400a o i tsm(125 c)=5000a o 125 165 165 100 1000 10000 qrr 1 -di /dt t 165 165 300 tvj=25 c o _ tvj=125 c o 400 1500 1500 125 115 105 95 85 75 0.06 0.05 0.1 0.15 0.2 0.25 0.3 400 500 600 500 0.3 0.2 0.25 0.16 0.12 0.1 0.08 0.07 0.05 0.04 0.03 0.02 rth(c-a) a 20 a 50 a 100 a 200 a 500 thyristor-thyristor modules stt165gk ; ;b p4 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
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