? semiconductor components industries, llc, 1994 october, 2016 ? rev. 12 1 publication order number: MMBF4391Lt1/d MMBF4391L, mmbf4392l, mmbf4393l jfet switching transistors n ? channel features ? s prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit drain ? source voltage v ds 30 vdc drain ? gate voltage v dg 30 vdc gate ? source voltage v gs 30 vdc forward gate current i g(f) 50 madc thermal characteristics characteristic symbol max unit total device dissipation fr ? 5 board (note 1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction ? to ? ambient r ja 556 c/w junction and storage temperature range t j , t stg ? 55 to +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. fr ? 5 = 1.0 0.75 0.062 in. sot ? 23 case 318 style 10 see detailed ordering, marking and shipping information in the package dimensions section on page 2 of this data sheet. marking & ordering information www. onsemi.com 2 source 3 gate 1 drain xxx = specific device code m = date code* = pb ? free package *date code orientation and/or overbar may vary depending upon manufacturing location. (note: microdot may be in either location) marking diagram 1 xxx m 2 1 3
MMBF4391L, mmbf4392l, mmbf4393l www. onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics gate ? source breakdown voltage (i g = 1.0 adc, v ds = 0) v (br)gss 30 ? vdc gate reverse current (v gs = 15 vdc, v ds = 0, t a = 25 c) (v gs = 15 vdc, v ds = 0, t a = 100 c) i gss ? ? 1.0 0.20 nadc adc gate ? source cutoff voltage (v ds = 15 vdc, i d = 10 nadc) MMBF4391Lt1 mmbf4392lt1 mmbf4393lt1 v gs(off) ? 4.0 ? 2.0 ? 0.5 ? 10 ? 5.0 ? 3.0 vdc off ? state drain current (v ds = 15 vdc, v gs = ? 12 vdc) (v ds = 15 vdc, v gs = ? 12 vdc, t a = 100 c) i d(off) ? ? 1.0 1.0 nadc adc on characteristics zero ? gate ? voltage drain current (v ds = 15 vdc, v gs = 0) MMBF4391Lt1 mmbf4392lt1 mmbf4393lt1 i dss 50 25 5.0 150 75 30 madc drain ? source on ? voltage (i d = 12 madc, v gs = 0) MMBF4391Lt1 (i d = 6.0 madc, v gs = 0) mmbf4392lt1 (i d = 3.0 madc, v gs = 0) mmbf4393lt1 v ds(on) ? ? ? 0.4 0.4 0.4 vdc static drain ? source on ? resistance (i d = 1.0 madc, v gs = 0) MMBF4391Lt1 mmbf4392lt1 mmbf4393lt1 r ds(on) ? ? ? 30 60 100 small ? signal characteristics input capacitance (v ds = 0 vdc, v gs = ? 15 vdc, f = 1.0 mhz) c iss ? 14 pf reverse transfer capacitance (v ds = 0 vdc, v gs = ? 12 vdc, f = 1.0 mhz) c rss ? 3.5 pf product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. ordering information device marking package shipping ? MMBF4391Lt1g 6j sot ? 23 (pb ? free) 3,000 / tape & reel sMMBF4391Lt1g* 6j mmbf4392lt1g 6k mmbf4393lt1g m6g smmbf4393lt1g* m6g ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
MMBF4391L, mmbf4392l, mmbf4393l www. onsemi.com 3 typical characteristics t j = 25 c i d , drain current (ma) , turn-on delay time (ns) d(on) t 5.0 2.0 20 10 0.5 1.0 3.0 7.0 5.0 1.0 50 100 0.7 2.0 10 20 i d , drain current (ma) , rise time (ns) r t figure 1. turn ? on delay time figure 2. rise time r k = r d' r k = 0 r k = r d' r k = 0 i d , drain current (ma) , turn-off delay time (ns) d(off) t figure 3. turn ? off delay time r k = r d' r k = 0 i d , drain current (ma) figure 4. fall time r k = r d' r k = 0 , fall time (ns) f t mmbf4391 mmbf4392 mmbf4393 30 50 200 500 1000 0.5 1.0 3.0 7.0 5.0 0.7 2.0 10 20 30 50 5.0 2.0 20 10 1.0 50 100 200 500 1000 0.5 1.0 3.0 7.0 5.0 0.7 2.0 10 20 30 50 0.5 1.0 3.0 7.0 5.0 0.7 2.0 10 20 30 50 5.0 2.0 20 10 1.0 50 100 200 500 1000 5.0 2.0 20 10 1.0 50 100 200 500 1000 t j = 25 c mmbf4391 mmbf4392 mmbf4393 t j = 25 c mmbf4391 mmbf4392 mmbf4393 t j = 25 c mmbf4391 mmbf4392 mmbf4393 v gs(off) = 12 v = 7.0 v = 5.0 v v gs(off) = 12 v = 7.0 v = 5.0 v v gs(off) = 12 v = 7.0 v = 5.0 v v gs(off) = 12 v = 7.0 v = 5.0 v
MMBF4391L, mmbf4392l, mmbf4393l www. onsemi.com 4 figure 5. switching time test circuit figure 6. typical forward transfer admittance figure 7. typical capacitance i d , drain current (ma) 2.0 5.0 3.0 7.0 0.5 1.0 3.0 7.0 5.0 50 30 10 20 0.7 2.0 10 20 , forward transfer admittance (mmhos) fs v 10 2.0 15 3.0 5.0 7.0 0.5 1.0 3.0 30 5.0 0.3 0.1 10 0.05 0.03 v r , reverse voltage (volts) c, capacitance (pf) t channel = 25 c v ds = 15 v t channel = 25 c (c ds is negligible c gs v dd v gg r gg r t r gen 50 v gen r k r d output input 50 50 set v ds(off) = 10 v input pulse t r 0.25 ns t f 0.5 ns pulse width = 2.0 s duty cycle 2.0% r gg > r k r d' = r d (r t + 50) r d + r t + 50 figure 8. effect of gate ? source voltage on drain ? source resistance 80 120 160 200 50 1.0 3.0 170 5.0 20 -10 -40 2.0 80 140 -70 v gs , gate-source voltage (volts) r 4.0 0 40 100 ma 125 ma 75 ma 50 ma 25 ma i dss = 10 ma t channel = 25 c figure 9. effect of temperature on drain ? source on ? state resistance 1.8 1.0 2.0 1.2 1.4 1.6 0.8 0.6 0.4 i d = 1.0 ma v gs = 0 , drain-source on-state ds(on) resistance (normalized) t channel , channel temperature ( c) 1.5 1.0 c gd 110 6.0 7.0 8.0 0 r , drain-source on-state ds(on) resistance (ohms) mmbf4393 mmbf4392 mmbf4391 note 1 the switching characteristics shown above were measured using a test circuit similar to figure 5. at the beginning of the switching interval, the gate voltage is at gate supply voltage ( ? v gg ). the drain ? source voltage (v ds ) is slightly lower than drain supply voltage (v dd ) due to the voltage divider. thus reverse transfer capacitance (c rss ) of gate ? drain capacitance (c gd ) is charged to v gg + v ds . during the turn ? on interval, gate ? source capacitance (c gs ) discharges through the series combination of r gen and r k . c gd must discharge to v ds(on) through r g and r k in series with the parallel combination of effective load impedance (r? d ) and drain ? source resistance (r ds ). during the turn ? off, this charge flow is reversed. predicting turn ? on time is somewhat difficult as the channel resistance r ds is a function of the gate ? source voltage. while c gs discharges, v gs approaches zero and r ds decreases. since c gd discharges through r ds , turn ? on time is non ? linear. during turn ? off, the situation is reversed with r ds increasing as c gd charges. the above switching curves show two impedance conditions; 1) r k is equal to r d? which simulates the switching behavior of cascaded stages where the driving source impedance is normally the load impedance of the previous stage, and 2) r k = 0 (low impedance) the driving source impedance is that of the generator.
MMBF4391L, mmbf4392l, mmbf4393l www. onsemi.com 5 figure 10. effect of i dss on drain ? source resistance and gate ? source voltage i dss , zero-gate voltage drain current (ma) , drain-source on-state ds(on) r 20 10 30 40 50 30 40 50 60 70 20 resistance (ohms) 0 10 0 1.0 2.0 3.0 4.0 5.0 , gate-source voltage gs v (volts) t channel = 25 c v gs(off) r ds(on) @ v gs = 0 6.0 7.0 8.0 9.0 10 70 60 80 90 100 80 90 100 110 120 130 140 150 note 2 the zero ? gate ? voltage drain current (i dss ) is the principle determinant of other j ? fet characteristics. figure 10 shows the relationship of gate ? source off voltage (v gs(off) ) and drain ? source on resistance (r ds(on) ) to i dss . most of the devices will be within 10% of the values shown in figure 10. this data will be useful in predicting the characteristic variations for a given part number. for example: unknown r ds(on) and v gs range for an mmbf4392 the electrical characteristics table indicates that an mmbf4392 has an i dss range of 25 to 75 ma. figure 10 shows r ds(on) = 52 for i dss = 25 ma and 30 for i dss = 75 ma. the corresponding v gs values are 2.2 v and 4.8 v.
MMBF4391L, mmbf4392l, mmbf4393l www. onsemi.com 6 package dimensions style 10: pin 1. drain 2. source 3. gate sot ? 23 (to ? 236) case 318 ? 08 issue ar d a1 3 1 2 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of the base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. soldering footprint* view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.000 b 0.37 0.44 0.50 0.015 c 0.08 0.14 0.20 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.30 0.43 0.55 0.012 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.027 c 0 ??? 10 0 ??? 10 t t 3x top view side view end view 2.90 0.80 dimensions: millimeters 0.90 pitch 3x 3x 0.95 recommended *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 MMBF4391Lt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent ? marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. ?
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