inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor IRF123 description drain current i d =7a@ t c =25 drain source voltage- : v dss = 60v(min) static drain-source on-resistance : r ds(on) =0.4 (max) nanosecond switching speeds applications switching power supplies motor controls,inverters and choppers audio amplifiers and high energy pulse circuits. absolute maximum ratings(t a =25 ) symbol parameter value unit v dss drain-source voltage (v gs =0) 60 v v gs gate-source voltage 20 v i d drain current-continuous@ tc=25 7 a p tot total dissipation@t c =25 40 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 3.12 /w r th j-a thermal resistance,junction to ambient 30 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor IRF123 electrical characteristics (t c =25 ) symbol parameter conditions min type max unit v (br)dss drain-source breakdown voltage v gs =0; i d =250 a 60 v v gs(th) gate threshold voltage v ds = v gs ; i d =250 a 2.0 4.0 v r ds(on) drain-source on-stage resistance v gs =10v; i d =4a 0.4 i gss gate source leakage current v gs = 20v;v ds =0 100 na i dss zero gate voltage drain current v ds =60v; v gs =0 250 ua v sd diode forward voltage i s =7a; v gs =0 2.5 v c iss input capacitance v ds =25v; v gs =0v; f t =1mhz 450 600 pf c rss reverse transfer capacitance 50 100 c oss output capacitance 200 400 t r rise time r gs =50 i d =4a; v dd =50v; r l =50 35 70 ns t d(on) turn-on delay time 20 40 t f fall time 35 70 t d(off) turn-off delay time 50 100 pdf pdffactory pro www.fineprint.cn
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