to-220ac ? DSEP29-12A pb free plating product DSEP29-12A 30a,1200v switchmode single fast recovery epitaxial diode pb ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 1/3 internal configuration cathode(bottom side metal heatsink) cathode anode base backside ultrafast recovery time soft recovery characteristics low recovery loss low forward voltage high surge current capability low leakage current application general description freewheeling, snubber, clamp inversion welder pfc plating power supply ultrasonic cleaner and welder converter & chopper ups product feature DSEP29-12A using lastest fred fab process(planar passivation pellet) with ultrafast and soft recovery characteristics. rev.05 absolute maximum ratings t c electrical characteristics t =25 c unless otherwise specified c =25 c unless otherwise specified symbol parameter test conditions values unit v maximum d.c. reverse voltage r 12 00 v v maximum repetitive reverse voltage rrm 12 00 v i average forward current f(av) t c 30 = 110 c a i rms forward current f(rms) t c 42 =110 c a i non - repetitive surge forward current fsm t j 30 0 = 45 c , t=10ms, 50hz, sine a p power dissipation d 1 0 5 w t junction temperature j - 40 to +150 c t storage temperature range stg - 40 to +1 50 c torqu e module - to - sink recommended m 3 1. 1 n m r thermal resistance jc junction - to - case 1. 2 c /w weight 2.2 g symbol parameter test conditions min. typ. max. unit i reverse leakage current rm v r -- = 12 00 v -- 100 a v r = 12 00 v, t j -- = 1 25 c -- 1 m a v forward voltage f i f -- = 30 a 2.15 2.5 v i f = 30 a , t j -- = 125 c 1.75 -- v t reverse recovery time r r i f = 1 a , v r = 30 v, di f - - /dt= - 2 00a/s 30 -- ns t reverse recovery time r r v r = 6 00 v, i f = 30 a di f /dt= - 2 00a/s, t j - - =25 c 16 0 -- ns i max. reverse recovery current rrm -- 5 -- a t reverse recovery time r r v r = 6 00 v, i f = 30 a di f /dt= - 2 00a/s, t j -- =125 c 3 0 0 -- ns i max. reverse recovery current rrm -- 11 -- a
? DSEP29-12A ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 2/3 rev.05 i f (a) v f v fig1. forward voltage drop vs forward current t j = 1 25 c t j =25 c 6 0 4 0 3 0 2 0 1 0 0 0 0. 5 1.0 2.0 2.5 3.0 di f /dt a/ s fig 2 . reverse recovery time vs di f /dt 1 00 0 8 00 6 00 4 00 2 00 0 0 10 0 t rr ( ns ) 2 0 0 30 0 4 0 0 50 0 v r = 6 00 v t j =1 25 c i f = 6 0 a i rrm (a) di f /dt a/ s fig 3 . reverse recovery current vs di f /dt 50 4 0 30 2 0 10 0 0 200 400 600 800 1000 di f /dt a/ s fig 4 . reverse recovery charge vs di f /dt 1 00 0 8 00 6 00 4 00 2 00 0 0 1 q rr ( c ) 2 3 4 v r = 6 00 v t j =1 25 c i f = 6 0a i f = 1 5a v r = 6 00 v t j =1 25 c i f = 6 0a i f = 30 a i f = 15 a k f 0 0. 2 0. 4 1. 4 0 .6 1 0 1 10 - 1 10 - 2 10 - 3 z thjc (k/w) 0.8 i rrm q rr t rr t j ( c ) fig 5 . dynamic parameters vs junction temperature 0 25 50 1 00 1 50 1 10 - 1 10 - 2 10 - 3 10 - 4 rectangular pulse duration (seconds) fig 6 . transient thermal impedance 75 125 1.5 1 .2 5 50 duty 0.5 0.2 0.1 0.05 single p ulse i f = 30 a i f = 15 a i f = 30 a 1.0
? DSEP29-12A ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 3/3 rev.05 dimensions to-220ac fig 7 . diode reverse recovery t est circuit and waveform i f di f /dt t rr i rrm q rr 0.25 i rrm 0.9 i rrm
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