bzt52-v-series vishay semiconductors 17431 document number 85760 rev. 1.6, 26-aug-10 www.vishay.com 1 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com small signal zener diodes features ? silicon planar power zener diodes ? these diodes are also available in other case styles and other configurations including: the sot-23 case with type designation bzx84 series, the dual zener diode common anode configuration in the sot-23 case with type designation az23 series and the dual zener diode common cathode configuration in the sot-23 case with type designation dz23 series. ? the zener voltages are graded according to the international e 24 standard. ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec mechanical data case: sod-123 weight: approx. 10.3 mg packaging codes/options: gs18/10 k per 13 " reel (8 mm tape), 10 k/box gs08/3 k per 7 " reel (8 mm tape), 15 k/box absolute maximum ratings t amb = 25 c, unless otherwise specified 1) diode on ceramic substrate 0.7 mm; 2.5 mm 2 pad areas 2) diode on ceramic substrate 0.7 mm; 5 mm 2 pad areas thermal characteristics t amb = 25 c, unless otherwise specified 1) valid provided that electrodes ar e kept at ambient temperature parameter test condition symbol value unit zener current see table " characteristics " power dissipation p tot 500 2) mw power dissipation p tot 410 1) mw parameter test condition symbol value unit thermal resistance junction to ambient air r thja 300 1) c/w junction temperature t j 150 c storage temperature range t s - 65 to + 150 c
bzt52-v-series vishay semiconductors document number 85760 rev. 1.6, 26-aug-10 www.vishay.com 2 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com electrical characteristics i zt1 = 5 ma, i zt2 = 1 ma (1) measured with pulses t p = 5 ms (2) = i zt1 = 2.5 ma (3) = i zt2 = 0.5 ma (4) valid provided that electrodes ar e kept at ambient temperature. part number marking code zener voltage range 1) dynamic resistance te s t current te m p. coefficient reverse voltage admissible zener current 4) v z at i zt1 r zj at i zt1 r zj at i zt2 i zt1 at i zt1 v r at i r = 100 na, i z at t amb = 45 c, i z at t amb = 25 c, v ma vz (10 -4 /c) v ma min. max. bzt52c2v4-v w1 2.2 2.6 85 600 5 - 9 to - 4 - - - bzt52c2v7-v w2 2.5 2.9 75 (< 83) < 500 5 - 9 to - 4 - 113 134 bzt52c3v0-v w3 2.8 3.2 80 (< 95) < 500 5 - 9 to - 3 - 98 118 bzt52c3v3-v w4 3.1 3.5 80 (< 95) < 500 5 - 8 to - 3 - 92 109 bzt52c3v6-v w5 3.4 3.8 80 (< 95) < 500 5 - 8 to - 3 - 85 100 bzt52c3v9-v w6 3.7 4.1 80 (< 95) < 500 5 - 7 to - 3 - 77 92 bzt52c4v3-v w7 4 4.6 80 (< 95) < 500 5 - 6 to - 1 - 71 84 bzt52c4v7-v w8 4.4 5 70 (< 78) < 500 5 - 5 to +2 - 64 76 bzt52c5v1-v w9 4.8 5.4 30 (< 60) < 480 5 - 3 to +4 > 0.8 56 67 bzt52c5v6-v wa 5.2 6 10 (< 40) < 400 5 - 2 to +6 > 1 50 59 bzt52c6v2-v wb 5.8 6.6 4.8 (< 10) < 200 5 - 1 to +7 > 2 45 54 bzt52c6v8-v wc 6.4 7.2 4.5 (< 8) < 150 5 + 2 to +7 > 3 41 49 bzt52c7v5-v wd 7 7.9 4 (< 7) < 50 5 + 3 to +7 > 5 37 44 bzt52c8v2-v we 7.7 8.7 4.5 (< 7) < 50 5 + 4 to +7 > 6 34 40 bzt52c9v1-v wf 8.5 9.6 4.8 (< 10) < 50 5 + 5 to +8 > 7 30 36 bzt52c10-v wg 9.4 10.6 5.2 (< 15) < 70 5 + 5 to +8 > 7.5 28 33 bzt52c11-v wh 10.4 11.6 6 (< 20) < 70 5 + 5 to +9 > 8.5 25 30 bzt52c12-v wi 11.4 12.7 7 (< 20) < 90 5 + 6 to +9 > 9 23 28 bzt52c13-v wk 12.4 14.1 9 (< 25) < 110 5 + 7 to +9 > 10 21 25 bzt52c15-v wl 13.8 15.6 11 (< 30) < 110 5 + 7 to +9 > 11 19 23 bzt52c16-v wm 15.3 17.1 13 (< 40) < 170 5 + 8 to +9.5 > 12 17 20 bzt52c18-v wn 16.8 19.1 18 (< 50) < 170 5 + 8 to +9.5 > 14 15 18 bzt52c20-v wo 18.8 21.2 20 (< 50) < 220 5 + 8 to +10 > 15 14 17 bzt52c22-v wp 20.8 23.3 25 (< 55) < 220 5 + 8 to +10 > 17 13 16 bzt52c24-v wr 22.8 25.6 28 (< 80) < 220 5 + 8 to +10 > 18 11 13 bzt52c27-v ws 25.1 28.9 30 (< 80) < 250 5 + 8 to +10 > 20 10 12 bzt52c30-v wt 28 32 35 (< 80) < 250 5 + 8 to +10 > 22.5 9 10 bzt52c33-v wu 31 35 40 (< 80) < 250 5 + 8 to +10 > 25 8 9 bzt52c36-v ww 34 38 40 (< 90) < 250 5 + 8 to +10 > 27 8 9 bzt52c39-v wx 37 41 50 (< 90) < 300 5 + 10 to +12 > 29 7 8 bzt52c43-v wy 40 46 60 (< 100) < 700 5 + 10 to +12 > 32 6 7 bzt52c47-v wz 44 50 70 (< 100) < 750 5 + 10 to +12 > 35 5 6 bzt52c51-v x1 48 54 70 (< 100) < 750 5 + 10 to +12 > 38 5 6 bzt52c56-v x2 52 60 < 135 (2) < 1000 (3) 2.5 typ. +10 (2) --- bzt52c62-v x3 58 66 < 150 (2) < 1000 (3) 2.5 typ. +10 (2) --- bzt52c68-v x4 64 72 < 200 (2) < 1000 (3) 2.5 typ. +10 (2) --- bzt52c75-v x5 70 79 < 250 (2) < 1500 (3) 2.5 typ. +10 (2) ---
bzt52-v-series vishay semiconductors document number 85760 rev. 1.6, 26-aug-10 www.vishay.com 3 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com electrical characteristics i zt1 = 5 ma, i zt2 = 1 ma 1) measured with pulses t p = 5 ms 2) = i zt1 = 2.5 ma 3) = i zt2 = 0.5 ma 4) valid provided that electrodes ar e kept at ambient temperature. part number marking code zener voltage range 1) dynamic resistance te s t current te m p. coefficient reverse voltage admissible zener current 4) v z at i zt1 r zj at i zt1 r zj at i zt2 i zt1 at i zt1 v r at i r = 100 na, i z at t amb = 45 c, i z at t amb = 25 c, v ma vz (10 -4 /c) v ma min. max. bzt52b2v4-v w1 2.35 2.45 85 600 5 - 9 to - 4 - - - bzt52b2v7-v w2 2.65 2.75 75 (< 83) < 500 5 - 9 to - 4 - 113 134 bzt52b3v0-v w3 2.94 3.06 80 (< 95) < 500 5 - 9 to - 3 - 98 118 bzt52b3v3-v w4 3.23 3.37 80 (< 95) < 500 5 - 8 to - 3 - 92 109 bzt52b3v6-v w5 3.53 3.67 80 (< 95) < 500 5 - 8 to - 3 - 85 100 bzt52b3v9-v w6 3.82 3.98 80 (< 95) < 500 5 - 7 to - 3 - 77 92 bzt52b4v3-v w7 4.21 4.39 80 (< 95) < 500 5 - 6 to - 1 - 71 84 bzt52b4v7-v w8 4.61 4.79 70 (< 78) < 500 5 - 5 to + 2 - 64 76 bzt52b5v1-v w9 5 5.2 30 (< 60) < 480 5 - 3 to + 4 > 0.8 56 67 bzt52b5v6-v wa 5.49 5.71 10 (< 40) < 400 5 - 2 to + 6 > 1 50 59 bzt52b6v2-v wb 6.08 6.32 4.8 (< 10) < 200 5 - 1 to + 7 > 2 45 54 bzt52b6v8-v wc 6.66 6.94 4.5 (< 8) < 150 5 + 2 to + 7 > 3 41 49 bzt52b7v5-v wd 7.35 7.65 4 (< 7) < 50 5 + 3 to + 7 > 5 37 44 bzt52b8v2-v we 8.04 8.36 4.5 (< 7) < 50 5 + 4 to + 7 > 6 34 40 bzt52b9v1-v wf 8.92 9.28 4.8 (< 10) < 50 5 + 5 to + 8 > 7 30 36 bzt52b10-v wg 9.8 10.2 5.2 (< 15) < 70 5 + 5 to + 8 > 7.5 28 33 bzt52b11-v wh 10.8 11.2 6 (< 20) < 70 5 + 5 to + 9 > 8.5 25 30 bzt52b12-v wi 11.8 12.2 7 (< 20) < 90 5 + 6 to + 9 > 9 23 28 bzt52b13-v wk 12.7 13.3 9 (< 25) < 110 5 + 7 to + 9 > 10 21 25 bzt52b15-v wl 14.7 15.3 11 (< 30) < 110 5 + 7 to + 9 > 11 19 23 bzt52b16-v wm 15.7 16.3 13 (< 40) < 170 5 + 8 to + 9.5 > 12 17 20 bzt52b18-v wn 17.6 18.4 18 (< 50) < 170 5 + 8 to + 9.5 > 14 15 18 bzt52b20-v wo 19.6 20.4 20 (< 50) < 220 5 + 8 to + 10 > 15 14 17 bzt52b22-v wp 21.6 22.4 25 (< 55) < 220 5 + 8 to + 10 > 17 13 16 bzt52b24-v wr 23.5 24.5 28 (< 80) < 220 5 + 8 to + 10 > 18 11 13 bzt52b27-v ws 26.5 27.5 30 (< 80) < 250 5 + 8 to + 10 > 20 10 12 bzt52b30-v wt 29.4 30.6 35 (< 80) < 250 5 + 8 to + 10 > 22.5 9 10 bzt52b33-v wu 32.3 33.7 40 (< 80) < 250 5 + 8 to + 10 > 25 8 9 bzt52b36-v ww 35.3 36.7 40 (< 90) < 250 5 + 8 to + 10 > 27 8 9 bzt52b39-v wx 38.2 39.8 50 (< 90) < 300 5 + 10 to + 12 > 29 7 8 bzt52b43-v wy 42.1 43.9 60 (< 100) < 700 5 + 10 to + 12 > 32 6 7 bzt52b47-v wz 46.1 47.9 70 (< 100) < 750 5 + 10 to + 12 > 35 5 6 bzt52b51-v x1 50 52 70 (< 100) < 750 5 + 10 to + 12 > 38 5 6 bzt52b56-v x2 54.9 57.1 < 135 (2) < 1000 (3) 2.5 typ. + 10 (2) --- bzt52b62-v x3 60.8 63.2 < 150 (2) < 1000 (3) 2.5 typ. + 10 (2) --- bzt52b68-v x4 66.6 69.4 < 200 (2) < 1000 (3) 2.5 typ. + 10 (2) --- bzt52b75-v x5 73.5 76.5 < 250 (2) < 1500 (3) 2.5 typ. + 10 (2) ---
bzt52-v-series vishay semiconductors document number 85760 rev. 1.6, 26-aug-10 www.vishay.com 4 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com typical characteristics (t amb = 25 c unless otherwise specified) figure 1. forward characteristics figure 2. admissible power dissi pation vs. ambient temperature figure 3. pulse thermal resistance vs. pulse duration 1 8 114 ma 10 3 10 2 10 -1 10 -2 10 -3 10 -4 10 -5 10 1 i f v f 0 0.2 0.4 0.6 0. 8 1 v t j = 100 c t j = 25 c 1 8888 500 400 300 200 100 0 m w p tot 200 100 0c t am b 1 8 116 0.01 0.02 0.05 0.1 0.2 0.5 v = 0 p i t p t p t t 10 3 c/ w 7 5 4 3 2 7 5 4 3 2 7 5 4 3 2 10 2 10 -5 10 -4 10 -3 10 -2 10 -1 110s 10 1 r tha t p figure 4. dynamic resist ance vs. zener current figure 5. capacitance vs. zener voltage figure 6. dynamic resist ance vs. zener current 1 8 117 1000 5 4 3 2 5 4 3 2 100 1 r zj 0.1 25 25 110 i z t j = 25 c 2.7 5 4 3 2 100 25 100 ma 3.6 4.7 5.1 5.6 1 8 11 8 1000 7 5 4 3 2 7 5 4 3 2 100 10 pf c tot 1 2345 2345 10 100 v v z at i z = 5 ma t j = 25 c v r = 1 v v r = 2 v v r = 1 v v r = 2 v 1 8 119 100 5 4 3 2 5 4 3 2 10 r zj 0.1 25 25 110 i z 1 25 100 ma t j = 25 c 33 27 22 1 8 15 12 10 6. 8 / 8 .2 6.2
bzt52-v-series vishay semiconductors document number 85760 rev. 1.6, 26-aug-10 www.vishay.com 5 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com figure 7. dynamic resistance vs. zener current figure 8. thermal differential resistance vs. zener voltage figure 9. dynamic resist ance vs. zener voltage 1 8 120 10 3 7 5 4 3 2 7 5 4 3 2 10 0.1 2345 2345 110 ma r zj i z t j = 25 c 47 + 51 43 39 36 10 2 1 8 121 10 3 5 4 3 2 5 4 3 2 10 2 1 r zth 5 4 3 2 10 1 2345 2345 10 100 v v z at i z = 5 ma negati v e positi v e v z t j r zth = r tha x v z x 1 8 122 100 7 5 4 3 2 7 5 4 3 2 1 r zj 10 t j = 25 c i z = 5 ma 1 2345 2345 10 100 v v z figure 10. temperature depend ence of zener voltage vs. zener voltage figure 11. change of zener volt age vs. junction temperature figure 12. temperature depend ence of zener voltage vs. zener voltage 1 8 135 25 20 15 10 5 0 - 5 m v /c v z t j 1 2345 2345 10 100 v v z at i z = 5 ma v 27 v , i = 2 ma 5 ma 1 ma 20 ma i z = 1 8 124 v z at i z = 5 ma 25 15 10 8 7 6.2 5.9 5.6 5.1 4.7 3.6 0. 8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 - 1 - 0.2 v z v t j 0204060 8 0 100 120 140 c 8 136 100 8 0 60 40 20 0 m v /c v z t j 0 20 40 8 0 60 100 v v z at i z = 2 ma i z = 5 ma
bzt52-v-series vishay semiconductors document number 85760 rev. 1.6, 26-aug-10 www.vishay.com 6 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com figure 13. change of zener voltage vs. junction temperature figure 14. change of zener voltage from turn-on up to the point of thermal equilibrium vs. zener voltage figure 15. change of zener voltage from turn-on up to the point of thermal equilibrium vs. zener voltage 1 8 15 8 1 8 159 1 8 160 5 4 3 2 1 0 v v z 0 20 40 60 8 0 100 v v z at i z = 5 ma i z = 5 ma i z = 2.5 ma v z = r zth x i z 8 111 test c u rrent i z 5 ma 1 234567 8 9 0 10 v v z 3.3 3.9 5.6 2.7 ma 50 40 30 20 10 0 l z t j = 25 c 8 .2 6. 8 4.7 1 8 112 10 20 30 0 40 v v z ma 30 20 10 0 l z 33 test c u rrent i z 5 ma t j = 25 c 10 12 15 1 8 22 27 36
bzt52-v-series vishay semiconductors document number 85760 rev. 1.6, 26-aug-10 www.vishay.com 7 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com package dimensions in millimeter s (inches): sod-123 figure 18. breakdown characteristics 1 8 157 0.1 (0.004) max. 2. 8 5 (0.112) 2.55 (0.100) 3. 8 5 (0.152) 3.55 (0.140) 1.7 (0.067) 1.40 (0.055) mo u nting pad layo u t 2.5 (0.09 8 ) 0. 8 5 (0.033) 0. 8 5 (0.033) 0. 8 5 (0.033) cathode b ar 0.65 (0.026) 0.45 (0.01 8 ) 0.10 (0.004) 1 (0.039) 0.15 (0.006) 1.35 (0.053) 0.2 (0.00 8 ) 0 to 8 0.45 (0.01 8 ) 0.25 (0.010) 0.5 (0.020) ref. re v . 4 - date: 24. sep. 2009 doc u ment no.: s 8 - v -3910.01-001 (4) 17432
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