jiangsu changjiang electronics technology co., ltd sot-23 plastic-encapsulate transistors MMBTA14 transistor (npn) features darlington amplifier marking : k3d maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 30 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 10 v i c collector current -continuous 0.3 a p c collector power dissipation 300 mw r ja thermal resistance from junction to ambient 417 /w t j junction temperature 150 t stg storage temperature -55 ~ +150 electrical characteristics (t a=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo i c = 100 a,i e =0 30 v collector-emitter breakdown voltage v (br)ceo i c = 100 a, i b =0 30 v emitter -base breakdown voltage v (br)ebo i e = 100 a, i c =0 10 v collector cut-off current i cbo * v cb =30 v, i e =0 0.1 a emitter cut-off current i ebo * v eb = 10v ,i c =0 0.1 a v ce =5v, i c = 10ma 10 000 dc current gain v ce =5v, i c = 100ma 2 0000 collector-emitter saturation voltage v ce (sat) * i c =100ma, i b =0.1ma 1.5 v base-emitter saturation voltage v be (sat) * i c =100ma, i b =0.1ma 2 v base-emitter voltage v be * v ce =5v,i c = 100ma 2.0 v transition frequency f t v ce =5v, i c = 10ma f= 100mhz 125 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mhz 12 pf * pulse test : pulse width 300 s,duty cycle 2%. unit : mm so t -23 1. base 2. emitter 3. collector h fe(1) * h fe( 2 ) * b,nov,2011
01234567 0 20 40 60 80 100 120 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 10 100 10 100 1 10 100 500 1000 1500 2000 1 10 100 0.1 1 10 1 10 1 10 100 400 600 800 1000 0.0 0.4 0.8 1.2 1.6 2.0 0.1 1 10 100 common emitter t a =25 2ua 1.8ua 1.6ua 1.4ua 1.2ua 1ua 0.8ua 0.6ua 0.4ua i b = 0.2ua collector current i c (ma) collector-emitter voltage v ce (v) static characteristic ambient temperature t a ( ) collector power dissipation p c (mw) p c t a 20 3 common emitter v ce =5v t a =25 collector current i c (ma) transition frequency f t (mhz) 200 i c 300 f t =1000 i c v besat t a =25 t a =100 base-emitter saturation voltage v besat (mv) collector current i c (ma) 100k 10k 1k common emitter v ce =5v 300 t a =100 t a =25 collector current i c (ma) dc current gain h fe 300k f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib capacitance c t (pf) reverse voltage v (v) c ib c ob 20 i c 300 MMBTA14 typical characteristics h fe =1000 i c v cesat t a =100 t a =25 collector current i c (ma) collector-emitter saturation voltage v cesat (mv) common emitter v ce =5v collector current i c (ma) t a = 2 5 t a = 1 0 0 base-emmiter voltage v be (v) 300 i c v be b,nov,2011
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