i nchange semiconductor isc product specification isc w ebsite 1 isc n - c hannel m osfet t ransistor IRFW450 features drain current C i d = 14 a@ t c =25 dr ain source voltage - : v dss = 500 v(min) static drain - source on - resistance : r ds(on) = 0.4 (max) fast switching description designed for use in switch mode power supplies and general purpose applications. absolute maximum rat ings(t a =25 thermal characterist ics symbol parameter value unit v dss drain - s ource v oltage 5 00 v v gs gate - s ource v oltage - continuous 20 v i d drain current - c ontinuous 14 a i d m drain current - single pluse 56 a p d total dissipation @t c =25 1 80 w t j max. operating junction t emperature 1 50 t stg storage t emperature - 65 ~1 50 symbol parameter max unit r th j - c thermal r esistance , ju nction to case 0.6 9 /w r th j - a thermal r esistance , ju nction to ambient 30 /w
i nchange semiconductor isc product specification isc w ebsite 2 isc n - c hannel m osfet t ransistor IRFW450 electrical characteristics t c =25 v (br)dss drain - s ource b reakdown v oltage v gs = 0; i d = 0.25ma 5 00 v v gs ( th ) gate t hreshold v oltage v ds = v gs ; i d = 0.25ma 2 4 v r ds( on ) drain - s ource o n - r esistance v gs = 10v; i d = 7.9 a 0. 4 i gss gate - body l eakage c urrent v gs = 20v;v ds = 0 100 na i dss zero g ate v oltage d rain c urrent v ds = 500 v; v gs = 0 v ds = 400 v; v gs = 0 ; t j = 150 25 0 1000 a v sd f orward on - v oltage i s = 14 a ; v gs = 0 1. 4 v
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