1 of 5 ' h v f u l s w l r q passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. typical applications include motor control, industrial and domes tic lighting, heating and static switching. 6 \ p e r o 6 & 5 ordering information part no. package packing bt151-500 r to-220 50pcs / tube 50pcs / tube BT151-650R bt151-800r to-220 to-220 50pcs / tube mar.2015-rev.00 www.sddydz.com % 7 series r bt151f-400r ito-220 50pcs / tube 50pcs / tube bt151f-650r bt151f-800r ito-220 ito-220 50pcs / tube
2 of 5 absolute maximum rating (t j = 25c, unless otherwise stated) parameter symbol ratings unit repetitive peak off-state voltages bt151(f)-500r v drm, v rrm 500 (note 2) v bt151(f)-650r 650 (note 2) bt151(f)-800r 800 average on-state curre nt (half sine wave; t mb 109c) i t ( av ) 7.5 a rms on-state current (all conduction angles) i t ( rms ) 12 a non-repetitive peak on-state current (half sine wave; t j = 25 c prior to surge) t = 10 ms i tsm 100 a t = 8.3 ms 110 i 2 t for fusing (t = 10 ms) i 2 t 50 a 2 s repetitive rate of rise of on-s tate current after triggering (i tm = 20 a; i g = 50 ma; di g /dt = 50 ma/ s) d it /dt 50 a/ s peak gate current i gm 2 a peak gate voltage v gm 5 v peak reverse gate voltage v rgm 5 v peak gate power p gm 5 w average gate power (over any 20 ms period) p g ( av ) 0.5 w operating junction temperature t j 125 c storage temperature t stg -40 ~150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. although not recommended, off-st ate voltages up to 800v may be applied without damage, but the thyristor may switch to the on-state. the ra te of rise of current should not exceed 15a/ s. thermal data parameter symbol ratings unit junction to mounting base to-220 jmb 1.3 k/w junction to ambient to-220 ja 60 k/w static characteristics (t j = 25c, unless otherwise stated) parameter symbol conditions min typ max unit gate trigger current i gt v d = 12 v, i t = 0.1 a 4.2 5 ma latching current i l v d = 12 v, i gt = 0.1 a 12.6 40 ma holding current i h v d = 12 v, i gt = 0.1 a 12 20 ma on-state voltage v t i t = 23 a 1.59 1.75 v gate trigger voltage v gt v d = 12 v, i t = 0.1 a v d = v drm ( max ) , i t = 0.1 a, t j = 125 c 0.35 0.7 0.5 1.5 v off-state leakage current i d , i r v d = v drm ( max ) , v r = v rrm ( max ) ,t j = 125c 0.1 0.5 ma dynamic characteristics (t j = 25c, unless otherwise stated) parameter symbol conditions min max unit critical rate of rise of off-state voltage dv d /dt v dm = 67% v drm(max) , t j = 125 c, exponential waveform; gate open circuit 50 130 v/ s r gk = 100 ? 200 1000 gate controlled turn-on time t gt i tm = 40 a, v d = v drm(max) , i g = 0.1 a, di g /dt = 5 a/ s 2 s circuit commutated turn-off time t q v d = 67% v drm(max) , t j = 125c; i tm = 20 a, v r = 25 v, di tm /dt = 30 a/ s, dv d /dt = 50 v/ s, r gk = 100 ? 70 s 6 & 5 mar.2015-rev.00 www.sddydz.com % 7 series r
3 of 5 typical characteristics 1ms 100s 10s 1000 t/s 10 100 10ms itsm/a dit/dt limit fig 2. maximum permissible non-repetitive peak on-state current itsm,versus pulse width tp , for sinusoidal currents, tp 10ms i t time i tsm t j initial=25c max fig 1. maximum on-state dissipation, p tot , versus average on-state current, i t(av) , where a=form factor=i t(rms) /i t(av) 0 15 it(av)/a 0 105.5 125 118.5 ptot/w 5 10 112 conduction angle degrees form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 4 2.8 2.2 1.9 =1.57 123 4567 8 tmb(max)/c t itsm/a fig 4. maximum permissible non-repetitive peak on-state current i tsm ,versus number of cycles,for sinusoidal currents, f=50hz 100 number of half cycles at 50hz 60 0 10 100 1 i t time i tsm t j initial=25c max 120 80 40 20 1000 100 150 -50 50 0 15 5 tmb/ c 0 10 it(rms)/a fig 3. maximum permi ssible rms current lt(rms), versus mounting base temperature tmb 109 c t 6 & 5 mar,2015-rev.00 www.sddydz.com % 7 series r
4 of 5 typical characteristics(cont.) 100 150 -50 50 0 3 1 t j / c 2 2.5 1.5 0.5 0 fig 7. normalised gate trigger current i gt (t j )/ i gt (25 c), versus junction temperature t j i gt (25 c) i gt (t j ) 100 150 -50 50 0 3 1 t j / c 2 2.5 1.5 0.5 0 i l (25 c) i l (t j ) fig 8. normalised latching current i l (t j )/i l (25 c), versus junction temperature t j vt/v 100 150 -50 50 0 3 1 t j / c 2 2.5 1.5 0.5 0 fig 9. normalised holding current i h (t j )/i h (25 ), versus junction temperature t j i h (25 c ) i h (t j ) t j =125 c 0 5 10 15 20 25 00.5 1 1.5 fig 10. typical and maximum on-state characteristic t j =25 c typ max 2 30 i t /a 1ms 0.1ms 10us 0.1 tp/s 0.001 0.01 10ms 0.1s zth j-mb(k/w) 1s 10s 1 10 tp t pd 100 150 50 0 10000 t j /c 1000 10 fig 12. typical, critical rate of rise of off-state voltage, dv d /dt versus junction temperature t j dvd/dt(v/s) r gk =100 100 gate open circuit fig 11.transient thermal impedance zthj-mb, versus pulse width tp 6 & 5 mar.2015-rev.00 www.sddydz.com % 7 series
ito-220 mechanical drawing 5 of 5 6 & 5 t o - 220 mechanical drawing mar,2015-rev.00 www.sddydz.com % 7 series
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