, o ne. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . silico n np n powe r transisto r telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 mjf1300 7 descriptio n ? collector-emitte r sustainin g voltag e : vceo(sus ) = 400v(min. ) ? collecto r saturatio n voltag e : v ce (sa. ) = 2.0(max ) @ l c = 5.0 a ? switchin g tim e : tf=0.9us(max.)@l c =5.0 a application s ? designe d fo r us e i n high-voltage , high-speed , powe r swit - chin g i n inductiv e circuit , the y ar e particularl y suite d fo r 11 5 an d 220 v switchmod e application s suc h a s switchin g regulators,inverters,moto r controls.solenoid/rela y driver s an d deflectio n circuits . ? 1 2 3 pi n 1.bas e i. collecto r 3 . emitte r to-220 f packag e absolut e maximu m rating5(t a =25'c ) symbo l vce v vce o veb o i c ic m i b ib m i e ie m p c t i tst g paramete r collector-emitte r voltag e collector-emitte r voltag e emitter-bas e voltag e collecto r current-continuou s collecto r current-pea k bas e curren t bas e current-pea k emitte r curren t emitte r current-pea k collecto r powe r dissipatio n tc-25' c junctio n temperatur e storag e temperatur e rang e valu e 70 0 40 0 g 8 1 6 4 8 1 2 2 4 4 0 15 0 -65-15 0 uni t v v v aa a a a a w " c " c therma l characteristic s symbo l rt h j- c rt h j- a paramete r ma x therma l resistance , junctio n t o cas e 3.1 2 therma l resistance , junctio n t o ambien t 62. 5 uni t c/ w 'c/ w f l b - - c -s - __ _ ^ , . ? ... . - - o .. " n ? h t -r - k j - , di m a ti c d f h j k l n q r s u - j * ' ?",: - u j " " * : ? -* * ! t t m m wi n 14.9 5 10.0 0 4.4 0 0.7 5 3.1 0 3.7 0 0.5 0 13. 4 1.1 0 5.0 0 2.7 0 2.2 0 2.6 5 6.4 0 ma x 15.0 5 10.1 0 4.6 0 0.8 0 3.3 0 3.9 0 0.7 0 13. 6 1.3 0 5.2 0 2.9 0 2.4 0 8 5 6.6 0 _ / 1 a qualit y semi-conductor s downloaded from: http:///
silico n np n powe r transisto r mjf1300 7 electrica l characteristic s t c =25 c unles s otherwis e specifie d symbo l vceo(sus ) vce(sat)- 1 vce(sat)- 2 vce(sat)- 3 v b e(sat)- 1 vbe(sat)- 2 ice s ieb o hpe- 1 hfe- 2 f r co b paramete r collector-emitte r sustainin g voltag e collector-emitte r saturatio n voltag e collector-emitte r saturatio n voltag e collector-emitte r saturatio n voltag e base-emitte r saturatio n voltag e base-emitte r saturatio n voltag e collecto r cutof f curren t emitte r cutoff curren t d c curren t gai n d c curren t gai n current-gainbandwidt h produc t outpu t capacitanc e condition s lc=10ma ; i b = 0 i c =2a;i b =0.4 a i c =5a;i b =1 a t c = iocr c i c =8a;i b =2 a i c =2a;i b =0.4 a i c =5a;i b =1 a t c = 100' c vces = 700v ; v be(off) = 1.5 v t c = 125" c v eb = 9v ; l c = 0 lc = 2a ; v ce = 5 v lc = 5a ; v ce = 5 v lc=0.5a;vce=10v ; le=0;v cb =10v;f,es t = 0.1mh z mi n 40 0 8 5 4 typ . 8 0 ma x 1. 0 2. 0 3. 0 3. 0 1. 2 1. 6 1. 5 0. 1 1. 0 0. 1 4 0 3 0 uni t v vv v vv m a m a mh z p f switchin g times ; resistiv e loa d t d t r t s t f storag e tim e fal l tim e storag e tim e fal l tim e lc=5a;v c c=125v ; in., ir w 1 a ' t *>, i t c ' dut y cycles ; 1 % 0. 1 1. 5 3. 0 0. 7 u s u s u s p s downloaded from: http:///
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