strongir fet? irfb7740pbf hexfet ? power mosfet d s g application ? ? brushed motor drive applications ? ? bldc motor drive applications ?? battery powered circuits ? ? half-bridge and full-bridge topologies ? ? synchronous rectifier applications ? ? resonant mode power supplies ? ? or-ing and redundant power switches ? ? dc/dc and ac/dc converters ? ? dc/ac inverters benefits ? ? improved gate, avalanche and dynamic dv/dt ruggedness ? ? fully characterized capacitance and avalanche soa ? ? enhanced body diode dv/dt and di/dt capability ? ? lead-free, rohs compliant v dss 75v r ds(on) typ. 6.0m ?? max 7.3m ?? i d 87a ? fig 1. typical on-resistance vs. gate voltage fig 2. maximum drain current vs. case temperature to-220ab irfb7740pbf s d g g d s gate drain source 4 8 12 16 20 v gs , gate-to-source voltage (v) 0 5 10 15 20 25 30 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e (m ? ) t j = 25c t j = 125c i d = 52a 25 50 75 100 125 150 175 t c , casetemperature (c) 0 20 40 60 80 100 i d , d r a i n c u r r e n t ( a ) 1 www.irf.com ? 2015 international rectifier submit datasheet feedback march 5, 2015 base part number package type standard pack form quantity irfb7740pbf to-220 tube 50 irfb7740pbf orderable part number
? irfb7740pbf 2 www.irf.com ? 2015 international rectifier submit datasheet feedback march 5, 2015 absolute maximum rating symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 87 a i d @ t c = 100c continuous drain current, v gs @ 10v 62 i dm pulsed drain current ?? 275 p d @t c = 25c maximum power dissipation 143 w linear derating factor 0.95 w/c v gs gate-to-source voltage 20 v t j t stg operating junction and storage temperature range -55 to + 175 ? c ? soldering temperature, for 10 seconds (1.6mm from case) 300 mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) ? avalanche characteristics ? e as (thermally limited) single pulse avalanche energy ?? 160 mj e as (thermally limited) single pulse avalanche energy ? 241 i ar avalanche current ? see fig. 15, 16, 23a, 23b a e ar repetitive avalanche energy ? mj thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ?? ??? 1.05 c/w ? r ? cs case-to-sink, flat greased surface 0.50 ??? r ? ja junction-to-ambient ? ??? 62 static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 75 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.05 ??? v/c reference to 25c, i d = 1ma ? r ds(on) static drain-to-source on-resistance ??? 6.0 7.3 m ?? v gs = 10v, i d = 52a ? v gs(th) gate threshold voltage 2.1 ??? 3.7 v v ds = v gs , i d = 100a i dss drain-to-source leakage current ??? ??? 1.0 a v ds =75 v, v gs = 0v ??? ??? 150 v ds =75v,v gs = 0v,t j =125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v r g gate resistance ??? 2.0 ??? ?? ??? 7.1 ??? ? v gs = 6.0v, i d = 26a ? notes: ?? repetitive rating; pulse width limited by max. junction temperature. ? limited by t jmax , starting t j = 25c, l = 0.117mh, r g = 50 ? , i as = 52a, v gs =10v. ?? i sd ? 52a, di/dt ? 503a/s, v dd ? v (br)dss , t j ?? 175c. ?? pulse width ? 400s; duty cycle ? 2%. ? c oss eff. (tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . ? c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . ? r ? is measured at t j approximately 90c. ? limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 22a, v gs =10v.
? irfb7740pbf 3 www.irf.com ? 2015 international rectifier submit datasheet feedback march 5, 2015 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions gfs forward transconductance 167 ??? ??? s v ds = 10v, i d =52a q g total gate charge ??? 81 122 i d = 52a q gs gate-to-source charge ??? 21 ??? v ds = 38v q gd gate-to-drain charge ??? 27 ??? v gs = 10v q sync total gate charge sync. (qg? qgd) ??? 54 ??? t d(on) turn-on delay time ??? 12 ??? ns v dd = 38v t r rise time ??? 60 ??? i d = 52a t d(off) turn-off delay time ??? 55 ??? r g = 2.7 ?? t f fall time ??? 45 ??? v gs = 10v ? c iss input capacitance ??? 4650 ??? pf ? v gs = 0v c oss output capacitance ??? 370 ??? v ds = 25v c rss reverse transfer capacitance ??? 240 ??? ? = 1.0mhz, see fig.7 c oss eff.(er) effective output capacitance (energy related) ??? 330 ??? v gs = 0v, vds = 0v to 60v ? c oss eff.(tr) output capacitance (time related) ??? 425 ??? v gs = 0v, vds = 0v to 60v ? diode characteristics ? symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? 87 a mosfet symbol (body diode) ? showing the i sm pulsed source current ??? ??? 275 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.2 v t j = 25c,i s = 52a,v gs = 0v ?? dv/dt peak diode recovery dv/dt ?? ??? 10 ??? v/ns t j = 175c,i s =52a,v ds = 75v ? t rr reverse recovery time ??? 41 ??? ns t j = 25c v dd = 64v ??? 51 ??? t j = 125c i f = 52a, q rr reverse recovery charge ??? 46 ??? nc t j = 25c di/dt = 100a/s ??? ??? 62 ??? t j = 125c ? i rrm reverse recovery current ??? 2.3 ??? a t j = 25c ? nc ? d s g
? irfb7740pbf 4 www.irf.com ? 2015 international rectifier submit datasheet feedback march 5, 2015 fig 6. normalized on-resistance vs. temperature fig 5. typical transfer characteristics fig 4. typical output characteristics fig 3. typical output characteristics fig 7. typical capacitance vs. drain-to-source voltage fig 8. typical gate charge vs. gate-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60s pulse width tj = 25c 4.5v vgs top 15v 10v 7.0v 6.0v 5.5v 5.0v 4.8v bottom 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60s pulse width tj = 175c 4.5v vgs top 15v 10v 7.0v 6.0v 5.5v 5.0v 4.8v bottom 4.5v 2.0 3.0 4.0 5.0 6.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 25v ? 60s pulse width t j = 25c t j = 175c -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 52a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 102030405060708090100 q g total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 60v v ds = 38v v ds= 15v i d = 52a
? irfb7740pbf 5 www.irf.com ? 2015 international rectifier submit datasheet feedback march 5, 2015 fig 10. maximum safe operating area fig 11. drain-to-source breakdown voltage fig 13. typical on-resista nce vs. drain current fig 9. typical source-drain diode forward voltage fig 12. typical c oss stored energy 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a in c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 75 80 85 90 95 v ( b r ) d s s , d r a in - t o - s o u r c e b r e a k d o w n v o lt a g e ( v ) id = 1.0ma 0 20 40 60 80 v ds, drain-to-source voltage (v) 0.0 0.2 0.4 0.6 0.8 e n e r g y ( j ) 0 50 100 150 200 i d , drain current (a) 4.0 8.0 12.0 16.0 20.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) v gs = 5.5v v gs = 6.0v v gs = 7.0v v gs = 8.0v v gs = 10v 0.1 1 10 v ds , drain-tosource voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec 100sec dc operation in this area limited by r ds (on)
? irfb7740pbf 6 www.irf.com ? 2015 international rectifier submit datasheet feedback march 5, 2015 fig 14. maximum effective transient thermal impedance, junction-to-case fig 16. maximum avalanche energy vs. temperature fig 15. avalanche current vs. pulse width notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1.avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 23a, 23b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figures 13) pd (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av ?? 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 100 120 140 160 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 52a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. (single pulse) allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse)
? irfb7740pbf 7 www.irf.com ? 2015 international rectifier submit datasheet feedback march 5, 2015 fig 17. threshold voltage vs. temperature fig 21. typical stored charge vs. dif/dt fig 18. typical recovery current vs. dif/dt fig 20. typical stored charge vs. dif/dt fig 19. typical recovery current vs. dif/dt 0 200 400 600 800 1000 di f /dt (a/s) 0 4 8 12 16 i r r m ( a ) i f = 36a v r = 64v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 4 8 12 16 i r r m ( a ) i f = 52a v r = 64v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 40 80 120 160 200 240 280 q r r ( n c ) i f = 36a v r = 64v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 40 80 120 160 200 240 280 q r r ( n c ) i f = 52a v r = 64v t j = 25c t j = 125c -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 0.0 1.0 2.0 3.0 4.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 100a i d = 1.0ma i d = 1.0a
? irfb7740pbf 8 www.irf.com ? 2015 international rectifier submit datasheet feedback march 5, 2015 fig 22. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 23a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 24a. switching time test circuit fig 25a. gate charge test circuit t p v (br)dss i as fig 23b. unclamped inductive waveforms fig 24b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 25b. gate charge waveform vdd ?
? irfb7740pbf 9 www.irf.com ? 2015 international rectifier submit datasheet feedback march 5, 2015 to-220ab package outline (dimensions are shown in millimeters (inches)) to-220ab part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ in t e r n a t io n a l part number r e c t if ie r lo t c o d e assem bly lo g o year 0 = 2000 date code w eek 19 lin e c lot code 1789 e x a m p l e : t h is is a n ir f 1 0 1 0 n o te : "p " in a s s e m b ly lin e p o s itio n indicates "lead - free" in th e assem bly lin e "c " assem bled o n w w 19, 2000 to-220ab packages are not recommended for surface mount application.
? irfb7740pbf 10 www.irf.com ? 2015 international rectifier submit datasheet feedback march 5, 2015 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ qualification information ? ? qualification level ? industrial (per jedec jesd47f) ?? moisture sensitivity level to-220 n/a rohs compliant yes ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release. revision history date comment 8/29/2014 ?? updated latest package outline on page 9. 03/05/2015 ?? updated e as (l =1mh) = 241mj on page 2 ?? updated note 8 ?limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 22a, v gs =10v? on page 2
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