!jtd u c x ij 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . 2ni65 i 2ni65 2 2ni65 3 telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 t0 3 , uf t max . 3?at:* i p i ' . h o i th e 2n1651 , 2nl652 r an d 2n165 3 da p tranaiator a ar e de - signe d fo r efficien t hig h curren t switchin g a t hig h frequencies . th e diffuse d bas e give s ver y lo w inpu t resistanc e an d hig h cutof f frequenc y whil e stil l main - tainin g hig h breakdow n voltage . th e lo w inpu t resistanc e give s bette r circui t stabilizatio n a t hig h temperature s an d greatl y increase s th e maximu m availabl e powe r gain . thes e transistor s ar e capabl e o f switchin g u p t o 160 0 watts . th e diffuse d bas e allo y powe r transistor s featur e welde d constructio n wit h a vacuum - tigh t sea l t o insur e lon g lif e an d stabl e operation . absolut e maximu m ratings : .11 1 n max . 2n165 1 2m165 2 2n165 3 v c e vd c 6 0 10 0 12 0 v c b vd c 6 0 10 0 12 0 v eb* * vd c 2. 0 se e pag e u l w ?**_* a m a 4 ad c 2 5 w _ 10 0 at g -6 0 t o +11 0 $ 11 0 p r i s th e maximu m averag e powe r dissipation . i t ca n b e exceede d durin g th e switchin g time . 0 electrica l characteristics ; mountin g bas e temperatur e 2 5 c unlea s otherwis e specified . symb . min . max . curren t gai n v p1p - -1. 5 vdc j ip - 2 5 ad c ve i . *- * curren t gai n vp-, 2 ,vdo j ip--1 0 ad c uc i ? l ? collecto r saturatio n voltag e min . 2 0 unit s i c - 2 5 adc j i b - 2. 5 ad c f e b e 3 5 lil o 1. 0 1. 5 emitter-bas e voltag e ir-nrv " 5 0 hlad c j i p ? bv , eb o 1. 5 collector-emitte r breawowi : voltag e !? - 50 0 madc ; r rir - ?x > o d i i typica l switchin g gharaateristicj ! switchin g time s conditions : fal l tim e 1. 1 dv ce o 2n165 1 3 0 .2*1165 2 6 0 2n165 3 8 0 storag e tim e s 1. 8 his e tim e 1 9 vd c vd c vd c vd c vd c vd c unit s v c c vd c 12.5 12.5 ad c 2" ? 2 5 i b (on ) ad c 2. 5 - i b (off ) ad c m ?. 5 a ohm s ' 0. 5 0. 5 n j semi-conductor s reserve s th e righ t t o chang e tes t conditions , parameter s limit s an d packag e dimension s withou t notic e informatio n furnishe d b y n j semi-conductor s i s believe d t o b e both accurat e an d reliabl e a t th e tim e o f goin g t o press . howeve r n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s us e n i semi-conductor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e placin g order s downloaded from: http:///
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