2014. 3. 31 1/2 semiconductor technical data kdr367 schottky barrier type diode revision no : 3 low voltage high speed switching. features h low forward voltage : v f(2) =0.23v (typ.) h small package : usc. maximum rating (ta=25 ? ) 1. anode 2. cathode usc dim millimeters a b c d e f g h j k 2.50 0.2 1.25 0.05 0.90 0.05 1.70 0.05 0.126 0.03 0~0.1 0.15 0.05 0.4 2 +4/-2 l m4~6 i1.0 max cathode mark m m i c j g d 2 1 b e k a f h l + _ + _ + _ + _ 0.30 0.06 + _ 0.27 0.10 + _ + _ + _ electrical characteristics (ta=25 ? ) characteristic symbol rating unit maximum (peak) reverse voltage v rm 15 v reverse voltage v r 10 v maximum (peak) forward current i fm 200 ma average forward current i o 100 ma surge current (10ms) i fsm 1 a power dissipation p d 200* mw junction temperature t j 125 ? storage temperature range t stg -55 q 125 ? characteristic symbol test condition min. typ. max. unit forward voltage v f(1) i f =1ma - 0.18 - v v f(2) i f =5ma - 0.23 0.30 v f(3) i f =100ma - 0.35 0.50 reverse current i r v r =10v - - 20 a total capacitance c t v r =0v, f=1mhz - 20 40 pf * : mounted on a glass epoxy circuit board of 20 ? 20mm, pad dimension of 4 ? 4mm. marking us type name lot no.
2014. 3. 31 2/2 kdr367 revision no : 3 forward current i f (a) 10 0 forward voltage v f (v) i f - v f 100 1m 10m 100m 0 power dissipation p (mw) 50 p - ta 0.1 0.2 0.3 0.4 0.5 ta=100 c ta=75 c ta=50 c ta=25 c ta=0 c ta=-25 c i r - v r reverse voltage v r (v) 0 10n reverse current i r (a) 100n 100 1m 10 1 246810 ta=100 c ta=75 c ta=50 c ta=25 c ta=0 c ta=-25 c reverse voltage v r (r) c t - v r capacitance c t (pf) 0 0.3 0.1 30m 10m 1 3 10 20 10 20 30 40 f=1mhz ta=25 c 25 50 75 100 125 150 40 80 120 160 200 240 mounted on a glass epoxy circuit board of 20 ` 20mm, pad dimension 4 ` 4mm. ambient temperature ta ( c)
|
