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savantic semiconductor product specification silicon pnp power transistors 2SB695 d escription with to-3pn package wide area of safe operation applications for power amplifier and general purpose applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -170 v v ceo collector-emitter voltage open base -120 v v ebo emitter-base voltage open collector -5 v i c collector current -7 a p c collector power dissipation t c =25 80 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol downloaded from: http:///
savantic semiconductor product specification 2 silicon pnp power transistors 2SB695 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-30ma ;i b =0 -120 v v (br)cbo collector-base breakdown voltage i c =-1ma ;i e =0 -170 v v (br)ebo emitter-base breakdown voltage i e =-1ma ;i c =0 -5 v v cesat collector-emitter saturation voltage i c =-5a; i b =-0.5a -1.5 v v be base-emitter on voltage i c =-1a;v ce =-5v -1.5 v i cbo collector cut-off current v cb =-170v; i e =0 -50 a i ebo emitter cut-off current v eb =-5v; i c =0 -50 a h fe-1 dc current gain i c =-1a ; v ce =-5v 40 200 h fe-2 dc current gain i c =-5a ; v ce =-5v 20 f t transition frequency i c =-1a ; v ce =-5v 7 mhz downloaded from: http:///
savantic semiconductor product specification 3 silicon pnp power transistors 2SB695 package outline fig.2 outline dimensions downloaded from: http:///

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