unisonic technologies co., ltd uf740 p ower mosfet www.unisonic.com.tw 1 of 6 copyright ? 201 3 unisonic t echnologies co., ltd qw - r502 - 078 . g 10a, 400v, 0.55 n -c hannel p ower mosfet ? description th e n - channel enhancement mode silicon gate power mosfet is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers . ? features * 10 a, 4 00v , r ds(on) (0.55 ) * single pulse avalanche energy rated * rugged - soa is power dissipation limited * fast switching speeds * linear transfer characteristics * high input impedance ? symbol 1.gate 3.source 2.drain to-220 1 to-220f 1 1 to-220f1 to-220f2 1 to-263 1 ? ordering information order ing nu mber package pin assignment packing lead free halogen free 1 2 3 u f 74 0 l - ta3 - t u f 74 0 g - ta3 - t to - 220 g d s tube u f 740 l - tf1 - t u f 740 g - tf1 - t to - 220f1 g d s t ube u f 740 l -t f2 - t u f 740 g -t f2 - t to -220 f2 g d s tube u f 74 0 l - t f 3 - t u f 74 0 g - t f 3 - t to - 220 f g d s tube uf740l - tq2 - t uf740g - tq2 - t to - 263 g d s tube uf740l - tq2 - r uf740g - tq2 - r to -263 g d s tape reel note: pin assignment: g: g ate d: d rain s: s ource (1) r: tape reel, t: tube (2) ta3: to-220, tf1: to-220f1, tf2: to-220f2, (2) tf3: to-220f, tq2: to-263 (3) l: lead free, g: halogen free uf740l -ta3 -t (1)packing type (2)package type (3)lead free
uf740 p ower mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw - r502 - 078 . g ? absolute maximum r atings (t c = 25 c , unless otherwise specified) parameter symbol ratings unit drain to source voltage (t j =25 c ~125 c ) v ds 400 v drain to gate voltage (r gs = 20k) (t j =25 c ~125 c ) v dgr 400 v gate to source voltage v gs 20 v drain current continuous i d 10 a t c = 100 c i d 6.3 a pulsed i dm 40 a avalanche energy single pulsed (note 3 ) e as 520 mj power dissipation to - 220/to - 263 p d 125 w to - 220f/to - 220f1 44 to - 220f2 46 derating above 25c to - 220/to - 263 1.0 w/c to - 220f/to - 220f1 0.35 to - 220f2 0.37 junction temperature t j +150 c operating temperature t opr - 55 ~ + 150 c storage temperature t stg - 55 ~ + 150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum rat ings are stress ratings only and functional device operation is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 c /w junction to case to - 220/to - 263 jc 1.0 c /w to - 220f /to - 220f1 2.86 to - 220f2 2.72
uf740 p ower mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw - r502 - 078 . g ? electrica l characteristics ( t c =25 c , u nless o therwise s pecified.) paramete r symbol test conditions min typ max unit drain to source breakdown voltage bv dss v gs = 0v, i d = 250a 400 v gate to threshold voltage v gs(th r ) v gs = v ds , i d = 250a 2.0 4.0 v on - stat e drain current (note 1 ) i d(on) v ds >i d(on) x r ds(on)max , v gs =10v 10 a zero gate voltage drain current i dss v ds = rated bv dss , v gs = 0v 25 a v ds =0.8 x rated bv dss , v gs =0v,t j =125 c 250 a gate to source leakage current i gss v gs = 20v 500 na drain to source on resistance r ds(on) v gs = 10v, i d = 5.2a (note 1 ) 0. 38 0.55 forward transconductance g fs v ds 50v, i d = 5.2a (note 1 ) 5.8 8.9 s turn - on delay time t d ly (on) v dd = 200v, i d 10a, r gs = 9.1, r l = 20, v gs = 10v mosfet switching times are essentially independent of operating temperature 65 75 ns rise time t r 130 145 ns turn - off delay time t d ly (off) 240 260 ns fall time t f 145 155 ns total gate charge (gate to source + gate to drain) q g (tot) v gs = 10v, i d = 10a, i g (ref) = 1.5ma, v ds = 0.8 x rated bv dss gate charge is essentially independent of operating temperature 138 nc gate to source charge q gs 35 nc gate to drain ?miller? charge q gd 35 nc input capacitance c iss v gs = 0v, v ds =25v, f = 1.0mhz 1170 pf ou tput capacitance c oss 160 pf reverse - transfer capacitance c rss 26 pf internal drain inductance l d measured from the contact screw on tab to center of die modified mosfet symbol showing the internal devices inductances g s d l d l s 3.5 nh measured from the drain lead, 6mm (0.25in) from package to center of die 4.5 nh internal source inductance l s measured from the source lead, 6mm (0.25in) from header to source bonding pad 7.5 nh source to drain diode specifications source to drain diode voltage v sd t j = 25c, i sd = 10a, v gs = 0v (note 1 ) 2.0 v continuous source to drain current i s modified mosfet symbol showing the integral reverse p -n junction diode g s d 10 a pulse source to drain curr ent (note 2 ) i s m 40 a reverse recovery time t rr t j = 25c, i sd = 10a, di sd /dt = 100a/s 170 390 790 ns reverse recovery charge q rr t j = 25c, i sd = 10a, di sd /dt = 100a/s 1.6 4.5 8.2 c n otes : 1 . pulse test: pulse width 300 s, duty cycle 2%. 2 . repetitive rating: pulse width limited by maximum junction temperature. 3 . v dd =5 0v, starting t j =25 c , l= 9.1m h, r g =25, peak i as = 10a
uf740 p ower mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw - r502 - 078 . g ? test circuit s and waveforms v ds l v dd d.u.t. i as 0.01 r g unclamped energy test circuit unclamped energy waveforms 0 t p bv dss i as t av v ds v dd switching time test circuit t d(off) t f 90% 50% 50% v gs 0 0 v ds t d(on) 90% t r 10% 10% resistive switching waveforms d.u.t. r g v gs r l v dd t on pulse width t off dut g d v ds (isolated supply) same type as dut current regulator i g current sampling resistor i d current sampling resistor 0 s 0.3f 0.2f 12v battery 50k 0 i g(ref) gate charge test circuit 0 v dd q gs q gd q g(tot) v gs v ds i g(ref) gate charge waveforms
uf740 p ower mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw - r502 - 078 . g ? typical performance cuves 100 10 0.1 drain to source voltage , v ds (v) drain current, i d (a) 10 2 10 1 1 10 3 drain current, i d (a) drain to source voltage , v ds (v) 80 200 output characteristics 0 160 40 0 3 9 12 15 120 6 forward bias safe operating area t c =25 t j =max rated single pulse dc 10ms 1ms 100s 10s operation in this region is limited by r ds(on) v gs = 10v v gs = 6.0v pulse duration=80s duty cycle = 0.5% max v gs = 5.5v v gs = 5.0v v gs = 4.5v v gs = 4.0v drain current, i d (a) drain to source voltage , v ds (v) 4 6 10 saturation characteristics 0 8 2 0 3 6 9 12 15 gate to source voltage , v sd (v) 2 8 10 transfer characteristics 0.1 0 1 10 100 6 4 drain to source current, i ds (on) (a) v gs =5.0v v gs =10v v gs =4.5v pulse duration=80s duty cycle = 0.5% max v gs =5.5v v gs =4.0v v gs =6.0v t j = 25 t j = 150 pulse duration=80s duty cycle = 0.5% max v ds 50v normalized drain to source breakdown voltage junction temperature , t j () 0 80 normalized drain to source breakdown voltage vs. junction temperature 0.75 160 -60 1.25 40 120 0.85 0.95 1.05 1.15 140 100 60 20 -40 i d =250a -20 capacitance vs. drain to source voltage capacitance , c (pf) drain to source voltage , v ds (v) 0 500 1000 2500 2000 1500 c iss v gs =0v, f=1mhz c iss =c gs +c gd c rss =c gd c oss c ds +c gd c oss c rss 1 10 2 2 10 5 2 5 10 3 2 5
uf740 p ower mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw - r502 - 078 . g ? typical performance cuves (cont.) transconductance , g fs (s) drain current, i d (a) 8 12 20 transconduce vs. drain current 0 16 4 0 3 6 9 12 15 source to drain current, i sd (a) source to drain voltage , v sd (v) source to drain diode voltage 0.1 0 10 100 1.0 0.3 0.6 0.9 1.2 1.5 t j = 25 t j = 150 pulse duration=80s duty cycle = 0.5% max t j = 25 t j = 150 pulse duration=80s duty cycle = 0.5% max drain to source on resistance , r ds (on) () drain current, i d (a) 10 40 50 drain to source on resistance vs. voltage and drain current 0 25 1 30 20 2 3 4 5 v gs =10v v gs =20v pulse duration =80s duty cycle = 0.5% max gate to source voltage , v gs (v) gate charge , q g (nc) 24 36 60 gate to source voltage vs. gate charge 0 48 12 0 4 12 16 20 8 v ds =200v v ds =320v v ds =80v i d =10a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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