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? AUIRFN8403 base part number package type standard pack orderable part number ?? form quantity ? AUIRFN8403 pqfn 5mm x 6mm tape and reel 4000 AUIRFN8403tr hexfet? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ absolute maximum ratings stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicat ed in the specifications is not implied. exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. the ther mal resistance and power dissipation ratin gs are measured under board mounted and still air conditions. ambient temperat ure (ta) is 25c, unless otherwise specified. automotive grade ? pqfn 5x6 mm g d s gate drain source v dss 40v r ds(on) typ. 2.5m ? i d (silicon limited) 123a ? max 3.3m ? i d (package limited) 95a applications ?? electric power steering (eps) ?? battery switch ?? start/stop micro hybrid ?? heavy loads ?? dc-dc converter parameter max. units i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v (silicon limited) 123 ? a i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v (silicon limited) 87 ? i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) 95 ? i dm pulsed drain current ? 492 p d @t a = 25c power dissipation 4.3 w p d @t c(bottom) = 25c power dissipation 94 linear derating factor 0.029 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy (thermally limited) ? 100 mj e as (tested) single pulse avalanche energy ? 159 i ar avalanche current ? see fig. 14, 15, 22a, 22b a e ar repetitive avalanche energy ? t j operating junction and -55 to + 175 c ? t stg storage temperature range hexfet ? power mosfet features ?? advanced process technology ?? ultra low on-resistance ?? 175c operating temperature ?? fast switching ?? repetitive avalanche allowed up to tjmax ?? lead-free, rohs compliant ?? automotive qualified * description specifically designed for automotive applications, this hexfet ? power mosfet utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanc he rating. these features combine to make this product an extremely efficient and reliable device for use in automotive and wide variety of other applications. 1 www.irf.com ? 2014 international rectifier submit datasheet feedback july 8, 2014 downloaded from: http:///
? AUIRFN8403 static electrical characteristics @ t j = 25c (unless otherwise specified) ? symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 40 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 26 CCC mv/c reference to 25c, i d = 2.0ma r ds(on) static drain-to-source on-resistance CCC 2.5 3.3 m ?? v gs = 10v, i d = 50a v gs(th) gate threshold voltage 2.2 CCC 3.9 v v ds = v gs , i d = 100a i dss drain-to-source leakage current CCC CCC 1.0 a v ds = 40v, v gs = 0v CCC CCC 150 v ds = 40v, v gs = 0v, t j = 125c i gss gate-to-source forward leakage CCC CCC 100 ?? v gs = 20v ? gate-to-source reverse leakage CCC CCC -100 v gs = -20v r g internal gate resistance CCC 1.5 CCC dynamic electrical characteristics @ t j = 25c (unless otherwise specified) ? symbol parameter min. typ. max. units conditions gfs forward transconductance 159 CCC CCC s v ds = 10v, i d = 50a q g total gate charge CCC 65 98 i d = 50a q gs gate-to-source charge CCC 16 CCC v ds = 20v q gd gate-to-drain ("miller" ) charge CCC 23 CCC v gs = 10v q sync total gate charge sync. (q g - q gd ) CCC 42 CCC t d(on) turn-on delay time CCC 11 CCC ns v dd = 20v t r rise time CCC 37 CCC i d = 30a t d(off) turn-off delay time CCC 33 CCC r g = 2.7 ? t f fall time CCC 26 CCC v gs = 10v ? c iss input capacitance CCC 3174 CCC pf v gs = 0v c oss output capacitance CCC 479 CCC v ds = 25v c rss reverse transfer capacitance CCC 332 CCC ? = 1.0 mhz c oss eff. (er) effective output capacita nce (energy related) CCC 637 CCC v gs = 0v, v ds = 0v to 32v ? c oss eff. (tr) effective output capacita nce (time related) CCC 656 CCC v gs = 0v, v ds = 0v to 32v ? diode characteristics ??? ? symbol parameter min. typ. max. units conditions i s continuous source current CCC CCC 123 ? a mosfet symbol (body diode) showing the i sm pulsed source current CCC CCC 492 a integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage CCC 0.9 1.3 v t j = 25c, i s = 50a, v gs = 0v ? dv/dt peak diode recovery CCC 1.3 CCC v/ns t j = 175c, i s = 50a, v ds = 40v t rr ? reverse recovery time CCC 16 CCC ns t j = 25c CCC 18 CCC t j = 125c q rr reverse recovery charge CCC 5.0 CCC nc t j = 25c CCC 6.9 CCC t j = 125c i rrm reverse recovery current CCC 0.50 CCC a t j = 25c nc ? v r = 34v, i f = 50a di/dt = 100a/s ? symbol parameter typ. max. units r ? jc (bottom) junction-to-case ? CCC 1.6 c/w r ? jc (top) junction-to-case ? CCC 31 r ? ja junction-to-ambient ? CCC 35 r ? ja (<10s) junction-to-ambient ? CCC 23 thermal resistance 2 www.irf.com ? 2014 international rectifier submit datasheet feedback july 8, 2014 downloaded from: http:///
? AUIRFN8403 fig. 2 typical output characteristics fig. 3 typical transfer characteristics fig. 4 normalized on-resistance vs. temperature 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 3 www.irf.com ? 2014 international rectifier submit datasheet feedback july 8, 2014 fig 5. typical capacitance vs. drain-to-source voltage 0 102030405060708090 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 32v v ds = 20v i d = 50a fig 6. typical gate charge vs. gate-to-source voltage -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 50a v gs = 10v 2 4 6 8 10 v gs , gate-to-source voltage (v) 1.0 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 10v ? 60s pulse width fig. 1 typical output characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v ? 60s pulse width tj = 25c 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v ? 60s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v downloaded from: http:///
? AUIRFN8403 fig 8. maximum safe operating area fig 10. drain-to-source breakdown voltage 25 50 75 100 125 150 175 t c , case temperature (c) 0 25 50 75 100 125 i d , d r a i n c u r r e n t ( a ) limited by package fig. 7 typical source-to-drain diode forward voltage 4 www.irf.com ? 2014 international rectifier submit datasheet feedback july 8, 2014 fig 11. typical c oss stored energy fig 9. maximum drain current vs. case temperature -5 0 5 10 15 20 25 30 35 40 45 v ds, drain-to-source voltage (v) 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 e n e r g y ( j ) 0 100 200 300 400 500 i d , drain current (a) 0 20 40 60 80 100 120 140 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) v gs = 5.0v v gs = 6.0v v gs = 7.0v v gs = 8.0v v gs =10v fig 12. typical on-resistanc e vs. drain current -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 40 42 44 46 48 50 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 2.0ma 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec dc downloaded from: http:///
? AUIRFN8403 fig 13. maximum effective transient thermal impedance, junction-to-case fig 14. typical avalanche current vs. pulse width notes on repetitive avalanche curves , figures 14, 15: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanc he is allowed as long as t jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 16a, 16b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figures 13) p d (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 100 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 50a fig 15. maximum avalanche energy vs. temperature 5 www.irf.com ? 2014 international rectifier submit datasheet feedback july 8, 2014 downloaded from: http:///
? AUIRFN8403 fig 17. threshold voltage vs. temperature 6 www.irf.com ? 2014 international rectifier submit datasheet feedback july 8, 2014 fig. 20 - typical recovery current vs. dif/dt fig. 18 - typical recovery current vs. dif/dt fig. 21 - typical stored charge vs. dif/dt fig. 19 - typical stored charge vs. dif/dt fig 16. typical on-resistance vs. gate voltage 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 50a t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt ( a/s) 0 1 2 3 4 5 6 7 i r r m ( a ) i f = 30a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt ( a/s) 0 20 40 60 80 100 q r r ( n c ) i f = 30a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt ( a/s) 0 1 2 3 4 5 6 7 i r r m ( a ) i f = 50a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt ( a/s) 0 20 40 60 80 100 q r r ( n c ) i f = 50a v r = 34v t j = 25c t j = 125c -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 100a i d = 1.0ma i d = 1.0a downloaded from: http:///
? AUIRFN8403 fig 22. peak diode recovery dv/dt test circuit for n-channel hexfet? power mosfets fig 22a. unclamped inductive test circuit fig 22b. unclamped inductive waveforms fig 23a. switching time test circuit fig 23b. switching time waveforms fig 24a. gate charge test circuit fig 24b. gate charge waveform 7 www.irf.com ? 2014 international rectifier submit datasheet feedback july 8, 2014 downloaded from: http:///
? AUIRFN8403 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ pqfn 5x6 outline "e" package details for footprint and stencil design recommendations, please refer to application note an-1136 at http://www.irf.com/technical-info/appnotes/an-1136.pdf for visual inspection recommendations, please refer to application note an-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf pqfn 5x6 outline "e" part marking xxxx xywwx xxxxx international rectifier logo part number (4 or 5 digits) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) 8 www.irf.com ? 2014 international rectifier submit datasheet feedback july 8, 2014 downloaded from: http:///
? AUIRFN8403 pqfn 5x6 outline "e" tape and reel note: for the most current drawing please refer to ir website at http://www.irf.com/package/ 9 www.irf.com ? 2014 international rectifier submit datasheet feedback july 8, 2014 downloaded from: http:///
? AUIRFN8403 ? qualification standards can be foun d at international rectifiers web site: http//www.irf.com/ ?? highest passing voltage. notes: ? repetitive rating; pulse width limited by max. junction temperature. ? starting t j = 25c, l =0.080mh, r g = 50 ? , i as = 50a. ? pulse width ? 400s; duty cycle ?? 2%. ? r ? is measured at tj of approximately 90c. ? when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994 : http://www.irf.com/technical-info/appnotes/an-994.pdf ? calculated continuous current based on ma ximum allowable junction temperature. ? coss eff. (tr) is a fixed capacitance that gives the same ch arging time as coss while vds is rising from 0 to 80% vdss. ? coss eff. (er) is a fixed capacitance that gives the same energy as coss while vds is rising from 0 to 80% vdss. qualification information ? ? qualification level automotive (per aec-q101) comments: this part number(s) pass ed automotive qualification. irs industrial and consumer qualification level is granted by extension of the higher automotive level. moisture sensitivity level pqfn 5mm x 6mm msl1 esd machine model class m3 (+/- 400v) ?? aec-q101-002 human body model class h1c (+/- 2000v) ?? aec-q101-001 charged device model class c5 (+/- 2000v) ?? aec-q101-005 rohs compliant yes revision history date comments 5/8/2014 ? updated typo on description on page 1. ? updated typo on gate charge units from s to nc on page 2. ? removed extra gfs from electrical table on page 2. 7/8/2014 10 www.irf.com ? 2014 international rectifier submit datasheet feedback july 8, 2014 downloaded from: http:///
? AUIRFN8403 important notice unless specifically designated for the automotive market, internat ional rectifier corporation and its subsidiaries (ir) reserve the right to make corrections, modificati ons, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without not ice. part numbers designated with the au prefix follow auto- motive industry and / or customer specific requirements with regards to produc t discontinuance and process change notifica- tion. all products are sold subject to irs terms and conditi ons of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specificatio ns applicable at the time of sale in accordance with irs standard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, te sting of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. cust omers are responsible for their products and applications using ir components. to minimize the risks with customer products and applications, customers should pro- vide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduc tion is without alteration and is accompanied by all associated warranties, c onditions, limitations, and notices. reproduc tion of this information with alterati ons is an unfair and deceptive business practice. ir is not responsible or liable for such altered doc umentation. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different fr om or beyond the parameters stated by ir for that product or ser- vice voids all express and any implied warranties for the associ ated ir product or service and is an unfair and deceptive busi- ness practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life , or in any other application in which the failure of the ir product could create a situation where personal inju ry or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer s hall indemnify and hold international rect ifier and its officers, employees, sub - sidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that ir was negligent regarding the design or manufacture of the product. only products certified as military grade by the defense logist ics agency (dla) of the us department of defense, are de- signed and manufactured to meet dla military specifications requi red by certain military, aerospace or other applications. buy- ers acknowledge and agree that any use of ir products not certifi ed by dla as military-grade, in applications requiring militar y grade products, is solely at the buyers own risk and that they are solely responsible for compliance with all legal and regula to- ry requirements in connection with such use. ir products are neither designed nor intended for use in automotiv e applications or environments unless the specific ir prod- ucts are designated by ir as compliant with iso/ts 16949 requirements and bear a part num ber including the designation au. buyers acknowledge and agree that, if they use any non-designated products in automotive applic ations, ir will not be responsible for any failure to meet such requirements. for technical support, please contact irs technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105 11 www.irf.com ? 2014 international rectifier submit datasheet feedback july 8, 2014 downloaded from: http:///

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