q?v~zy??q?v?_ra]qr???qcabgq HCA65R099FE super junction mosfet parameter value unit bv dss @t j,max 700 v i d 40 a r ds(on), max 99 p
qg ,typ 45 nc key parameters features thermal resistance characteristics symbol parameter typ. max. units r jc junction-to-case -- 0.45 e /w r ja junction-to-ambient -- 40 symbol parameter value units v dss drain-source voltage 650 v v gs gate-source voltage 30 v i d drain current ? continuous (t c = 25 e ) 40 a drain current ? continuous (t c = 100 e ) 25 a i dm drain current ? pulsed (note 1) 120 a e as single pulsed avalanche energy (note 2) 1000 mj dv/dt mosfet dv/dt ruggedness, v ds =0?480v 100 v/ns dv/dt reverse diode dv/dt, v ds =0?480v, i ds ? i d 50 v/ns p d power dissipation 278 w t j , t stg operating and storage temperature range -55 to +150 e t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 e absolute maximum ratings t c =25 e unless otherwise specified april 2016 to-247 package & internal circuit application d g s HCA65R099FE (fast recovery diode type) 650v n-channel super junction mosfet ? very low fom (r ds(on) xq g ) ? extremely low switching loss ? excellent stability and uniformity ? 100% avalanche tested ? higher reverse recovery dv/dt ? fast recovery time ? telecom power equipment / server station ? uninterruptible power supply (ups) ? micro solar inverter & ev charger ? suitable for soft switching (zvs full bridge & llc) demanding high efficiency
q?v~zy??q?v?_ra]qr???qcabgq HCA65R099FE super junction mosfet electrical characteristics t j =25 q c unless otherwise specified symbol parameter test conditions min typ max units i s continuous source-drain diode forward current -- -- 40 a i sm pulsed source-drain diode forward current -- -- 120 v sd source-drain diode forward voltage i s = 20 a, v gs = 0 v -- -- 1.4 v trr reverse recovery time i s = 20 a, v gs = 0 v di f /dt = 100 a/ v -- 162 -- qrr reverse recovery charge -- 1.12 -- & bv dss drain-source breakdown voltage v gs = 0 v, i d = 1 ma 650 -- -- v i dss zero gate voltage drain current v ds = 650 v, v gs = 0 v -- -- 10 3 v ds = 520 v, t j = 125 e -- -- 100 3 i gss gate-body leakage current v gs = 30 v, v ds = 0 v -- -- 100 2 off characteristics c iss input capacitance v ds = 50 v, v gs = 0 v, f = 1.0 mhz -- 3300 -- ? c oss output capacitance -- 210 -- ? c rss reverse transfer capacitance -- 12 -- ? dynamic characteristics t d(on) turn-on time v ds = 325 v, i d = 20 a, r g = 25 ? -- 80 -- t r turn-on rise time -- 25 -- t d(off) turn-off delay time -- 120 -- t f turn-off fall time -- 16 -- q g total gate charge v ds = 520 v, i d = 20 a v gs = 10 v -- 45 60 nc q gs gate-source charge -- 18 -- nc q gd gate-drain charge -- 8 -- nc switching characteristics source-drain diode maximum ratings and characteristics notes ; 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=80mh, v dd =50v, r g =25 : , starting t j =25 q c 3. pulse test : pulse width ? v ' x w \ & \ f o h ? on characteristics v gs gate threshold voltage v ds = v gs , i d = 2 ma 2.5 -- 4.5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 20 a -- 88 99 m ?
q?v~zy??q?v?_ra]qr???qcabgq HCA65R099FE super junction mosfet typical characteristics figure 1. on region characteristics figure 2. transfer characteristics figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 5. capacitance characteristics figur e 6. gate charge characteristics 0 1020304050 0 2 4 6 8 10 12 v ds = 520v i d = 20a v gs , gate-source voltage [v] q g , total gate charge [nc] 0 20406080100 10 0 10 1 10 2 10 3 10 4 10 5 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd v gs = 0 v f = 1 mhz c rss c iss c oss capacitances [pf] v ds , drain-source voltage [v]
q?v~zy??q?v?_ra]qr???qcabgq HCA65R099FE super junction mosfet typical characteristics (continued) figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 11. transient thermal response curve 25 50 75 100 125 150 0 10 20 30 40 i d , drain current [a] t j , junction temperature [ o c] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 p s dc 10 ms 1 ms 100 p s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] t 2 t 1 p dm -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * note : 1. v gs = 10 v 2. i d = 20 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2
note : 1. v gs = 0 v 2. i d = 1ma bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z t jc (t) = 0.45 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z t jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z t jc (t), thermal response t 1 , square wave pulse duration [sec]
q?v~zy??q?v?_ra]qr???qcabgq HCA65R099FE super junction mosfet fig 12. gate charge test circuit & waveform fig 13. resistive switching test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms e as =l l i as 2 ---- 2 1 v in v ds 10% 90% t d(on) t r t on t off t d(off) t f charge v gs 10v q g q gs q gd v dd v ds v dd ( 0.5 rated v ds ) 10v v ds r l dut r g 3ma v gs dut v ds 300nf .
200nf 12v same type as dut 10v dut r g l i d bv dss t p v dd i as v ds (t) i d (t) time
q?v~zy??q?v?_ra]qr???qcabgq HCA65R099FE super junction mosfet fig 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i s controlled by pulse period v dd l i s 10v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period --------------------------
q?v~zy??q?v?_ra]qr???qcabgq HCA65R099FE super junction mosfet package dimension { v t y [ ^ g symbol size symbol size min max min max w 15.4 15.8 w4 2.44 2.64 w1 5.56 (typ) l 20.4 20.8 w2 1.17 1.35 l1 5.36 5.56 w3 1.55 1.75 l2 19.8 20.2 l3 3.69 3.93 t3 0.51 0.69 t 4.6 4.8 g( - 3.51 3.65 t1 1.4 1.6 g1( - 6.61 6.85 t2 2.3 2.5 g2( - 4.96 5.2 ( unit : mm )
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