p age:p 2 - p 1 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. fe a tures medium power linear switching applications maximum ratings (ta=25 unless otherwise noted) par a met e r symbol TIP41 TIP41a TIP41b TIP41 c unit col l ector - ba s e v o l t age v cbo 40 60 80 100 v col l ector - emitter v o l t age v ceo 40 60 80 100 v emitter - base v o l t a g e v ebo 5 v col l ector cur re n t - conti n u o us i c 6 a col l ector p o w e r dissi p a t i on p c 2 w juncti o n t emperature t j s torage t e mp e rature t stg electrical characteristics (tamb=25 unless otherwise specified) p a r a m e t e r s y mbol t es t c o n dit i ons m in m ax u nit collector - base breakd o w n v o l t age TIP41 tip 4 1 a TIP41b TIP41c v cbo i c = 1 ma, i e =0 40 60 80 100 v collector - emitter bre a kd o w n v ol t age TIP41 tip 4 1 a TIP41b TIP41c v ceo i c = 30ma, i b =0 40 60 80 100 v emitter - b a s e breakd o w n v o l t age v ebo i e = 1 ma, i c =0 5 v coll ec tor c ut - off c urr e nt tip 4 1 tip 4 1 a TIP41b TIP41c i cbo v cb =40 v , i e =0 v cb =60 v , i e =0 v cb =80 v , i e =0 v cb =100 v , i e =0 0.4 ma collector cut - off current TIP41/4 1 a /41b /41c i ceo v ce = 30 v , i b = 0 v ce = 60 v , i b = 0 0.7 ma emitter cut - off current i ebo v eb = 5 v , i c =0 1 ma dc cur r ent g a in h fe(1) v ce = 4 v , i c = 0.3a 30 h fe(2) v ce =4 v , i c = 3a 15 75 collector - emitter satu r ation v o l t age v ce(sat) i c = 6 a, i b = 0 .6a 1.5 v base - emitter v o l t age v be(on v ce = 4 v , i c = 6 a 2 v t r a n s ition fr e qu e n c y f t v ce =10v , i c = 0 . 5 a f =1mhz 3 mh z t ip41/a/ b/c ( npn ) 1. base 2. collector to - 220 3. emitter
p age:p 2 - p 2 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. t ip41/a/ b/c typical characteristics
|
