parameter symbol value unit collector-base voltage v cbo 1200 v collector-emitter voltage v ceo 700 v emitter-base voltage v ebo 6.0 v collector current i c 6.0 a base current i b 3.0 a total dissipation at p tot 50 w max. operating junction temperature t j 150 o c storage temperature t stg -55~150 o c 2SC5148 application: parameter symbol test conditions min. typ. max. unit collector cut-off current i cbo v cb = 1000v, i e = 0 5.0 ua emitter cut-off current i ebo v eb = 6.0v, i c =0 5.0 ua collector-emitter sustaining voltage v ceo i c = 2.0ma, i b = 0 700 v dc current gain h fe(1) v ce = 5.0v, i c = 1.0a 10 30 h fe(2) v ce = 5.0v, i c = 5.0a 5 collector-emitter saturation voltage v ce(sat) i c = 5.0a, i b = 1.2a 2.0 v base-emitter saturation voltage v be(sat) i c = 5.0a, i b = 1.2a 1.5 v current gain bandwidth product f t v ce = 10v, i c = 0.1a 2.0 mhz silicon npn triple diffused planar ttransistors product specification horizontal deflection output for high resolution display ,color tv. high speed switching applications electrical characteristics absolute maximum ratings ( ta = 25 c) o ( ta = 25 c) o to-3p h)is tiger electronic co.,ltd
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