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AN5636 K1885 APTGT D121J UFT12520 0N06L 0N06L 2SB1097
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  features low cost diffused junction low leakage low forward voltage drop high current capab ility and similar s olvents mechanical data case:jedec do-41,molded plastic terminals: axial lead ,solderable per mil- std-202,method 208 polarity: color band denotes cathode weight:0.012 ounces, 0.34 grams mounting position: any maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. units maximum recurrent peak reverse voltage v rrm v max imu m rms v o lt ag e v rms v maximum dc blocking voltage v dc v maximum average f orw ard rectif ied current 9.5mm lead length, @t a =75 peak forw ard surge current 8.3ms single half -sine-w ave superimposed on rated load @t j =125 maximum instantaneous forw ard voltage @ 0.2 a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a =100 maximum reverse recovery time (note1) t rr ns typical junction capacitance (note2) c j pf typical thermal resistance (note3) r ja <d operating junction temperature range t j storage temperature range t stg note:1. measured with i f =0.5a, i r =1a, i rr =0.25a. i fsm 2.0 20.0 RC2 2000 1400 2000 fast recovery rect ifier i f(av) the plastic material carries u/l recognition 94v-0 3. thermal resistance f rom junction to ambient. a 2. measured at 1.0mhz and applied rev erse v oltage of 4.0v dc. -55----+150 -55----+150 1000 10.0 300.0 i r 50 rc 2 (z) d o - 4 1 easily cleaned with freon,alcohol,isopropanol a 15 voltage range: 2000 v current: 0.2 a 0.2 a dimensions in millimeters www.diode.kr diode semiconductor korea
0 0 25 0.05 0.1 0.2 0.15 0.25 50 single phase half wave 60hz resistive or inductive load 150 125 100 75 t j =25 pulse width=300 www.diode.kr diode semiconductor korea


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