inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK1200 description drain current C i d = 3a@ t c =25 drain source voltage- : v dss = 900v(min) fast switching speed applications designed for high voltage, high speed power switching absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 900 v v gs gate-source voltage 20 v i d drain current-continuous@ tc=25 3 a p tot total dissipation@tc=25 80 w t j max. operating junction temperature 150 t stg storage temperature range -55~15 0 thermal characteristics symbol parameter max unit th j-c thermal resistance,junction to case 0.83 /w th j-a thermal resistance,junction to ambient 35 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK1200 electrical characteristics (t c =25 ) symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0; i d = 10ma 900 v v gs( th ) gate threshold voltage v ds =10 v gs ; i d =1ma 2.0 4.0 v r ds( on ) drain-source on-stage resistance v gs =10v; i d = 1.5a 5.0 7.0 i gss gate source leakage current v gs = 16v;v ds = 0 10 ua i dss zero gate voltage drain current v ds =720v; v gs = 0 250 ua v sd diode forward voltage i f =3a; v gs =0 0.95 v tr rise time v gs =10v;i d =2a; r l =15 70 ns ton turn-on time 80 ns tf fall time 60 ns toff turn-off time 120 ns pdf pdffactory pro www.fineprint.cn
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