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  ? 2014 microchip technology inc. ds70005081b-page 1 features input/output ports internally matched to 50 ? and dc decoupled package available - 16-contact x2qfn C 2.5mm x 2.5mm x 0.4mm (max) devices are rohs compliant transmitter chain operating voltage 3.0v to 5.0v gain: - typically 30 db gain across 4.9-5.9 ghz at 3.3v typical linear output power at 3.3v: - meets 802.11a ofdm acpr requirement up to 21 dbm - meets 802.11ac spectrum mask requirement up to 20 dbm - 3.0% dynamic evm up to 18 dbm for 802.11a, 54 mbps - 1.75% dynamic evm up to 16 dbm for 802.11ac, mcs9, 80 mhz operating current for 802.11a/n/ac applications -270 ma @ p out = 18 dbm for 802.11a at 3.3v i pen : 6 ma idle current: 210 ma i cq low shut-down current: ~2 a high-speed power-up/down - turn on/off time (10%C90%) <400 ns limited variation over temperature - ~1 db gain/power variation between -40c to +85c excellent on-chip power detection - load and temperature insensitive - >20 db dynamic range on-chip power detection receiver chain gain: - typically 12 db gain across 4.9-5.9 ghz noise figure - typically 2.95 db across 4.9-5.9 ghz lna bypass loss - typically 8 db applications wlanCieee 802.11a/n/ac wave(ieee 802.11p) home rf cordless phones 5 ghz ism wireless equipment product description sst11lf04 is a 4.9-5.9 ghz front-end module (fem) designed in compliance wi th ieee 802. 11a/n/p/ac applications. based on gaas phemt/hbt technology, it combines a high-performance power amplifier (pa), a low-noise amplifier (lna) and an antenna tx/rx switch (sw). the input/output rf ports are single- ended and internally matched to 50 ? . these rf ports are dc decoupled, and require no external dc-block- ing capacitors or matching components. this helps reduce the system board bill of materials (bom) cost. there are two functional components to the fem: the transmitter (tx) chain and the receiver (rx) chain. the tx chain includes a high-efficiency pa based on the ingap/gaas hbt technology. at 3.3v, the transmit- ter typically provides 30 db gain and provides 802.11a spectrum mask compliance at 21 dbm. the tx chain has excellent linearity, typically 3% dynamic evm at 18 dbm output power, with 802.11a, 54 mbps operation and requires only 270 ma dc current. it also provides up to 16 dbm output power with 1.75% dynamic evm using 802.11ac mcs9, 80 mhz modulation. sst11lf04 transmitter features a high-speed power- up/-down control with low current (total i pen ~6 ma). sst11lf04 has an excellent on-chip, single-ended power detector that is stable over temperature and insensitive to output vswr. this detector features a wide dynamic-range (20 db) with db-wise linear opera- tion, thus providing a reliable solution to board-level power control. the rx chain provides typically 12 db gain with 2.95 db noise figure. with the lna bypassed, the receiver loss is typically 8 db with p1db>20 dbm. sst11lf04 is offered in a16-contact x2qfn package. see figure 2-1 for pin assignments and ta b l e 2 - 1 for pin descriptions. sst11lf04 4.9-5.9 ghz high-linearity, high-efficiency front-end module downloaded from: http:///
sst11lf04 ds70005081b-page 2 ? 2014 microchip technology inc. to our valued customers it is our intention to provide our valued customers with the best documentation possible to ensure successful use of your micro chip products. to this end, we will continue to improve our publicat ions to better suit your needs. our publications will be refined and enhanced as new volumes and updates are introduced. if you have any questions or comments regard ing this publication, please contact the marketing communications department via e-mail at docerrors@microchip.com . we welcome your feedback. most current data sheet to obtain the most up-to-date version of this data s heet, please register at our worldwide web site at: http://www.microchip.com you can determine the version of a data sheet by examining its literature number found on the bottom outside corner of any page . the last character of the literature number is the vers ion number, (e.g., ds30000000a is version a of document ds30000000). errata an errata sheet, describing minor operational differences from the data sheet and recommended workarounds, may exist for curren t devices. as device/documen tation issues become known to us, we will publish an errata sheet. the errata will specify the revisi on of silicon and revision of document to which it applies. to determine if an errata sheet exists for a partic ular device, please check with one of the following: microchips worldwide web site; http://www.microchip.com your local microchip sales office (see last page) when contacting a sales office, please spec ify which device, revision of silicon and data sheet (include literature number) you are using. customer notification system register on our web site at www.microchip.com to receive the most current information on all of our products. downloaded from: http:///
? 2014 microchip technology inc. ds70005081b-page 3 sst11lf04 1.0 functional blocks figure 1-1: functional block diagram 16 15 14 13 5 6 7 8 12 3 4 1211 10 9 75081 b1.4 gndvcc vcc nc gnd rx gnd vcc lencrx gnd ant vdet pen gnd tx lna pa sw pa downloaded from: http:///
sst11lf04 ds70005081b-page 4 ? 2014 microchip technology inc. 2.0 pin assignments figure 2-1: pin assignment s for 16-contact x2qfn table 2-1: pin description symbol pin no. pin name type 1 1. i=input, o=output function gnd 1 ground ground pad rx 2o lna output gnd 3 ground ground pad vcc 4 power supply p w r supply voltage vdet 5o detector output voltage pen 6i pa enable gnd 7 ground ground pad tx 8 i rf transmit input nc 9 no connection vcc 10 power supply p w r supply voltage vcc 11 power supply p w r supply voltage gnd 12 ground ground pad ant 13 i/o antenna gnd 14 ground pad crx 15 i switch control pin voltage len 16 i lna enable 16 15 14 13 5 6 7 8 12 3 4 1211 10 9 75081 p1.3 gndvcc vcc nc gnd rx gnd vcc lencrx gnd ant vdet pen gnd tx top view (contacts facing down) rf and dc gnd downloaded from: http:///
? 2014 microchip technology inc. ds70005081b-page 5 sst11lf04 3.0 electrical specifications the dc and rf specifications for the power amplifier are specified below. refer to table 3-2 for the dc volt- age and current specifications. absolute maximum stress ratings (applied conditions greater than th ose listed under absolute maxi- mum stress ratings may cause permanent damage to the device. this is a stress rating only and func- tional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. exposure to absolute maximum stress rating conditions may affect device reliability.) tx input power to pin 8 (tx) 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dbm 1. at 5.0 v bias, the rf-input po w er must be less than 5 dbm w hile operating into a maximum antenna port v s w r of 6:1. at 5.5 v bias, the maximum v s w r is 2:1 w ith a maximum input-rf po w er of 5 dbm. rx input power to pin 13 (ant with lna on) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 d bm average tx output power from pin 13 (ant) 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +22 dbm 2. n ever measure w ith c w source. pulsed single-tone source w ith <50% duty cycle is reco mmended. exceeding the maximum rating of average output po w er could cause permanent damage to the device. supply voltage at pins 4, 10, and 11 (v cc ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5.2v pa enable voltage to pin 6 (pen) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +3.6v dc supply current (i cc ) 3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 ma 3. measured w ith 100% duty cycle 54 mbps 8 02.11a ofdm signal operating temperature (t a ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oc to +85oc storage temperature (t stg ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oc to +120oc maximum junction temperature (t j ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150oc surface mount solder reflow temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260c for 10 seconds table 3-1: operating range range ambient temp v cc industrial -40c to + 8 5c 3.0 v to 5.5 v table 3-2: dc electrical characteristics at 25c for tx chain symbol parameter min. typ max. unit v cc supply voltage at pins 4, 10, and 11 3.0 3.3 5.5 v v pen tx pa enable voltage 2.95 v i cq tx idle current for 802.11a to meet evm ~3% @ 17 dbm 210 ma i cc tx supply current for 11a ofdm 54 mbps signal, p out = 1 8 dbm, 3.3 v v cc 270 ma i cc rx supply current (with lna on) 11 ma i pen i pen pa enable control current 6m a downloaded from: http:///
sst11lf04 ds70005081b-page 6 ? 2014 microchip technology inc. table 3-3: tx chain rf characteristics at 25c v cc = 3.3v, pen = 2.95v symbol parameter min. typ max. unit f l-u frequency range 4.9 5.9 ghz linearity, output power with <3% dynamic evm, 802.11a @ 54 mbps ofdm 1 8 dbm output power level <1.75% dynamic evm, 802.11ac mcs9, 80 mhz bw 16 dbm g gain over band 24 30 db rl in input return loss at tx port 61 1 d b v det power detector output voltage range, 0-20 dbm 0.3 0.95 v 2f, 3f, 4f, 5f harmonics at 17 dbm -30 dbm/ mhz table 3-4: receiver chain rf characteristics at 25c, v cc = 3.3v symbol parameter min. typ max. unit f l-u frequency range 4.9 5.9 ghz g gain, with lna on 12 db nf noise figure, with lna on 2.95 db ip1db input p1db, with lna on -6 dbm loss lna bypassed 8 db rl in input return loss at antenna port with lna 12 db table 3-5: control voltages 1 1. n o other operating modes are allo w ed function pen crx len transmit mode 3.0 v 00 receive mode, lna on 03 . 03 . 0 receive mode, lna bypass 03 . 00 off 000 downloaded from: http:///
? 2014 microchip technology inc. ds70005081b-page 7 sst11lf04 4.0 typical transmitter per formance characteristics test conditions: v cc = 3.3v, t a = 25c, pen = 3.0v, 802.11a 54 mbps ofm modulation unless otherwise specified figure 4-1: transmitter s-parameter figure 4-2: evm versus output power, 802.11a 54 mbps, 100% duty cycle 75081 f5.0 -60 -50 -40 -30 -20 -10 0 10 20 30 40 024681 0 s-parameter, db frequency, ghz s11 s21 s12 s22 75081 f6.1 0 1 2 3 4 5 6 7 8 9 10 5 6 7 8 9 10111213141516171819202122 evm (%) output power (dbm) evm versus output power 4920 5180 5500 5850 downloaded from: http:///
sst11lf04 ds70005081b-page 8 ? 2014 microchip technology inc. figure 4-3: dynamic evm versus output power, 802.11ac, mcs9, 80 mhz, 60 s pulse, 75% duty cycle figure 4-4: dc supply current versus output power 802.11a, 54 mbps, 100% duty cycle 0 1 2 3 4 5 6 7 8 9 10 5 6 7 8 9 101112131415161718192021 evm (%) output power (dbm) dynamic evm versus output power 4920 5180 5500 5850 75081 f7.0 75081 f8.0 200 210 220 230 240 250 260 270 280 290 300 310 320 330 340 350 360 370 380 390 400 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 supply current (ma) output power (dbm) supply current versus output power 4920 5180 5500 5850 downloaded from: http:///
? 2014 microchip technology inc. ds70005081b-page 9 sst11lf04 figure 4-5: instantaneous supply curre nt versus output power, 802.11ac, mcs9, 80 mhz, 60 s pulse, 75% duty cycle figure 4-6: power gain vs output powe r 802.11a, 54 mbps, 100% duty cycle 75081 f9.0 200 210 220 230 240 250 260 270 280 290 300 310 320 330 340 350 360 370 380 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 supply current (ma) output power (dbm) instantaneous current versus output power 4920 5180 5500 5850 75081 f10.0 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 5 6 7 8 9 10111213141516171819202122 power gain (db) output power (dbm) power gain versus output power 4920 5180 5500 5850 downloaded from: http:///
sst11lf04 ds70005081b-page 10 ? 2014 microchip technology inc. figure 4-7: detector voltage versus outp ut power 802.11a, 54 mbps, 100% duty cycle 75081 f11.0 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 0 1 2 3 4 5 6 7 8 9 10111213141516171819202122 detector voltage (v) output power (dbm) detector voltage versus output power 4920 5500 5500 5850 downloaded from: http:///
? 2014 microchip technology inc. ds70005081b-page 11 sst11lf04 5.0 typical receiver pe rformance characteristics test conditions: v cc = 3.3v, t a = 25c, pen = 0 len=3.0v crx= 3.0v, small signal measurements unless otherwise specified figure 5-1: receiver s-parameter figure 5-2: receiver noise figure 75081 f16.0 -40 -30 -20 -10 0 10 20 024681 0 s-parameter, db frequency, ghz s11 s21 s12 s22 75081 f17.0 1 1.25 1.5 1.75 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4.5 4.75 5 5.25 5.5 5.75 6 noise figure, db frequency, ghz downloaded from: http:///
sst11lf04 ds70005081b-page 12 ? 2014 microchip technology inc. 6.0 application schematic figure 6-1: typical schematic 75081 schematic 1.4 11lf04 vcc vdet len crx 16 15 14 13 5 6 7 8 12 3 4 1211 10 9 recei v er o u tp u t 50 nc 0.1 f pen transmitter inp u t 50 vcc 2.2 f 0.1 f antenna50 vcc 0.1 f 5.6 pf downloaded from: http:///
? 2014 microchip technology inc. ds70005081b-page 13 sst11lf04 7.0 package information note: the topside pin #1 indicator can either be a circle or a bar. for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging note: microchip technology drawing c04-14017a sheet 1 of 1 16-lead super-thin quad flatpack no-leads (q3ce/f) - 2.5x2.5 mm body [x2qfn] 16-x2qfn-2.5x2.5-q3c-2.0 note: from the bottom view, the pin #1 indicator may be either a 45-degree chamfer or a half-c ircle notch. 2. the topside pin #1 indicator is laser engraved; its approximate shape and location is as shown. 3. the external paddle is electrically connected to the die back-side and to vss. this paddle must be soldered to the pc board; it is required to connect this paddle to the vss of the unit. connection of this paddle to any other voltage potential will result in shorts and electr ical malfunction of the device. 4. untoleranced dimensions are nominal target dimensions. 5. all linear dimensions are in millimeters (max/min). 1. downloaded from: http:///
sst11lf04 ds70005081b-page 14 ? 2014 microchip technology inc. table 7-1: revision history revision description date a ? initial release of data sheet dec 2013 b ? updated figure 1-1 on page 3 , figure 2-1 on page 4 , and figure 6-1 on page 12 , oct 2014 downloaded from: http:///
? 2014 microchip technology inc. ds70005081b-page 15 sst11lf04 the microchip web site microchip provides online support via our www site at www.microchip.com . this web site is used as a means to make files and information easily available to customers. accessible by using your favorite internet browser, the web site contains the following information: product support C data sheets and errata, application notes and sample programs, design resources, users guides and hardware support documents, latest software releases and archived software general technical support C frequently asked questions (faq), technical support requests, online discussion groups, microchip consultant program member listing business of microchip C product selector and ordering guides, latest microchip press releases, listing of seminars and events, listings of microchip sales offices, distributors and factory representatives customer change notification service microchips customer notification service helps keep customers current on microchip products. subscribers will receive e-mail notification whenever there are changes, updates, revisions or errata related to a specified product family or development tool of interest. to register, access the microchip web site at www.microchip.com . under support, click on customer change notification and follow the registration instructions. customer support users of microchip products can receive assistance through several channels: distributor or representative local sales office field application engineer (fae) technical support customers should contact their distributor, representative or field application engineer (fae) for support. local sales offices are also available to help customers. a listing of sa les offices and locations is included in the back of this document. technical support is available through the web site at: http://microchip.com/support downloaded from: http:///
sst11lf04 ds70005081b-page 16 ? 2014 microchip technology inc. 1.0 product iden tification system to order or obtain information, e.g., on pricing or deli very, refer to the factory or the listed sales office. part no. device device: sst11lf04 = 5 ghz, 802.11ac, front-end module package: q3ce = x2qfn (2.5mm x 2.5mm), 0.4 max thickness 16-contact evaluation kit flag k = evaluation kit valid combinations: SST11LF04-Q3CE SST11LF04-Q3CE-k xxx package downloaded from: http:///
? 2014 microchip technology inc. ds70005081b-page 17 information contained in this publication regarding device applications and the like is prov ided only for your convenience and may be superseded by updates. it is your responsibility to ensure that your application me ets with your specifications. microchip makes no representations or warranties of any kind whether express or implied, written or oral, statutory or otherwise, related to the information, including but not limited to its condition, quality, performance, merchantability or fitness for purpose . microchip disclaims all liability arising from this information and its use. use of microchip devices in life support and/or safe ty applications is entirely at the buyers risk, and the buyer agrees to defend, indemnify and hold harmless microchip from any and all damages, claims, suits, or expenses resulting fr om such use. no licenses are conveyed, implicitly or ot herwise, under any microchip intellectual property rights. trademarks the microchip name and logo, th e microchip logo, dspic, flashflex, k ee l oq , k ee l oq logo, mplab, pic, picmicro, picstart, pic 32 logo, rfpic, sst, sst logo, superflash and uni/o are registered trademarks of microchip technology incorporated in the u.s.a. and other countries. filterlab, hampshire, hi-tech c, linear active thermistor, mtp, seeval and the embedded control solutions company are registered tradema rks of microchip technology incorporated in the u.s.a. silicon storage technology is a registered trademark of microchip technology inc. in other countries. analog-for-the-digital age, a pplication maestro, bodycom, chipkit, chipkit logo, codeguard, dspicdem, dspicdem.net, dspicworks, dsspeak, ecan, economonitor, fansense, hi-tide, in-circuit serial programming, icsp, mindi, miwi, mpasm, mpf, mplab certified logo, mplib, mplink, mtouch, omniscient code generation, picc, picc-18, picdem, picdem.net, pickit, pictail, real ice, rflab, select mode, sqi, serial quad i/o, total endurance, tsharc, uniwindriver, wiperlock, zena and z-scale are trademarks of microchip technology incorporated in the u.s.a. and other countries. sqtp is a service mark of mi crochip technology incorporated in the u.s.a. gestic and ulpp are registered trademarks of microchip technology germany ii gmbh & co. kg, a subsidiary of microchip technology inc., in other countries. all other trademarks mentioned herein are property of their respective companies. ? 2014, microchip technology incorporated, printed in the u.s.a., all rights reserved. printed on recycled paper. isbn: 978-1-63276-681-6 note the following details of the code protection feature on microchip devices: microchip products meet the specification cont ained in their particular microchip data sheet. microchip believes that its family of products is one of the mo st secure families of its kind on the market today, when used i n the intended manner and under normal conditions. there are dishonest and possibly illegal meth ods used to breach the code protection fe ature. all of these methods, to our knowledge, require using the microchip products in a manner outside the operating specif ications contained in microchips data sheets. most likely, the person doing so is engaged in theft of intellectual property. microchip is willing to work with the customer who is concerned about the integrity of their code. neither microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. code protection does not mean that we are guaranteeing the product as unbreakable. code protection is constantly evolving. we at microchip are committed to continuously improving the code protection features of our products. attempts to break microchips c ode protection feature may be a violation of the digital millennium copyright act. if such acts allow unauthorized access to your softwa re or other copyrighted work, you may have a right to sue for relief under that act. microchip received iso/ts-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona; gresham, oregon and design centers in california and india. the companys quality system processes and procedures are for its pic ? mcus and dspic ? dscs, k ee l oq ? code hopping devices, serial eeproms, microperi pherals, nonvolatile memory and analog products. in addition, microchips quality system for the design and manufacture of development systems is iso 9001:2000 certified. quality ? management ?? s ystem ? certified ? by ? dnv ? == iso/ts ? 16949 ? == ? downloaded from: http:///
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