SSPL5505 55v n-channel mosfet www.goodark.com page 1 of 7 rev.1.1 main product characteristics features and benefits description absolute max rating symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 160 i d @ tc = 100c continuous drain current, v gs @ 10v 110 i dm pulsed drain current 640 a power dissipation 230 w p d @tc = 25c linear derating factor 1.5 w/c v ds drain-source voltage 55 v v gs gate-to-source voltage 20 v e as single pulse avalanche energy @ l=0.3mh 960 mj i as avalanche current @ l=0.3mh 80 a t j t stg operating junction and storage temperature range -55 to +175 c v dss 55v r ds (on) 4.5mohm(typ.) i d 160a to -220 marking and pin assignment schematic diagram ? advanced process technology ? special designed for pwm, load switching and general purpose applications ? ultra low on-resistance with low gate charge ? fast switching and reverse body recovery ? 175 operating temperature ? lead free product these n-channel enhancement mode power field effect transistors are produced using silikron proprietary mosfet technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switch mode power supplies.
SSPL5505 55v n-channel mosfet www.goodark.com page 2 of 7 rev.1.1 thermal resistance symbol characteristics typ. max. units r jc junction-to-case 0.65 /w junction-to-ambient (t 10s) 62 /w r ja junction-to-ambient (pcb mounted, steady-state) 40 /w electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 v v gs = 0v, i d = 250a 4.5 5 v gs =10v,i d =75a r ds(on) static drain-to-source on-resistance 7.74 m t j = 125 2 4 v ds = v gs , i d = 150a v gs(th) gate threshold voltage 2.0 v t j = 125 1 v ds =55v,v gs = 0v i dss drain-to-source leakage current 50 a t j = 125 100 v gs =20v i gss gate-to-source forward leakage -100 na v gs = -20v q g total gate charge 101.6 q gs gate-to-source charge 25.8 q gd gate-to-drain("miller") charge 40.1 nc i d = 75a, v ds =30v, v gs = 10v t d(on) turn-on delay time 19.4 t r rise time 88.2 t d(off) turn-off delay time 45.1 t f fall time 74.2 ns v gs =10v, v dd =30v, r l =0.4, r gen =2.7 i d =75a c iss input capacitance 7128 c oss output capacitance 837 c rss reverse transfer capacitance 110 pf v gs = 0v v ds =50v ? = 1mhz source-drain ratings and characteristics symbol parameter min. typ. max. units conditions i s continuous source current (body diode) 160 a i sm pulsed source current (body diode) 640 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 0.87 1.3 v i s =75a, v gs =0v, t j = 25c t rr reverse recovery time 49.5 ns q rr reverse recovery charge 93.8 nc t j = 25c, i f =75a, di/dt = 100a/s
SSPL5505 55v n-channel mosfet www.goodark.com page 3 of 7 rev.1.1 test circuits and waveforms switch waveforms: notes : calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature, using junction-to-case thermal resistance. the value of r ja is measured with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175c.
SSPL5505 55v n-channel mosfet www.goodark.com page 4 of 7 rev.1.1 typical electrical and thermal characteristics figure 2. gate to source cut-off voltage figure 1: typical output characteristics figure 3. drain-to-source breakdown voltage vs. temperature figure 4: normalized on-resistance vs. case temperature
SSPL5505 55v n-channel mosfet www.goodark.com page 5 of 7 rev.1.1 figure 5. maximum drain current vs. case temperature typical electrical and thermal characteristics figure 6.typical capacitance vs. drain-to-source voltage figure7. maximum effective transient thermal impedance, junction-to-case
SSPL5505 55v n-channel mosfet www.goodark.com page 6 of 7 rev.1.1 min nom max min nom max a - 1.300 - - 0.051 - a1 2.200 2.400 2.600 0.087 0.094 0.102 b - 1.270 - - 0.050 - b1 1.270 1.370 1.470 0.050 0.054 0.058 c - 0.500 - - 0.020 - d - 15.600 - - 0.614 - d1 - 28.700 - - 1.130 - d2 - 9.150 - - 0.360 - e 9.900 10.000 10.100 0.390 0.394 0.398 e1 - 10.160 - - 0.400 - p - 3.600 - - 0.142 - p 1 1.500 0.059 e l 12.900 13.100 13.300 0.508 0.516 0.524 ?1 - 7 0 - - 7 0 - ?2 - 7 0 - - 7 0 - ?3 - 3 0 - 5 0 7 0 9 0 ?4 - 3 0 - 1 0 3 0 5 0 symbol dimension in millimeters dimension in inches 2.54bsc 0.1bsc to220 package outline dimension_gn e d d1 p a ? 1 d2 a1 c e b b1 ? 2 ? 3 l ? 4 p1 e1
SSPL5505 55v n-channel mosfet www.goodark.com page 7 of 7 rev.1.1 ordering and marking information device marking: SSPL5505 package (available) to220 operating temperature range c : -55 to175 oc devices per unit package type units/ tube tubes/inner box units/inner box inner boxes/carton box units/carton box to220 50 20 1000 6 6000 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 175 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =125 or 175 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
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