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1 standard products UT54ACTQ16245 radhard cmos 16-bit bidirectiona l transceiver, ttl inputs, and three-state outputs datasheet may 16, 2012 www.aeroflex.com/radhard features ? 16 non-inverting bidirectional buffers with three-state out- puts ? guaranteed simultaneously switching noise level and dynamic threshold performance ? separate control logic for each byte ? 0.6 ? m commercial radhard tm cmos - total dose: 100k rad(si) - single event latchup immune ? high speed, low power consumption ? output source/sink 24ma ? standard microcircuit drawing 5962-06244 - qml compliant part ? package: - 48-lead flatpack, 25 mil pitch (.390 x .640) description the 16-bit wide UT54ACTQ16245 transceiver is built using aeroflex?s commercial radhard tm epitaxial cmos technol- ogy and is ideal for space applications. this high speed, low power UT54ACTQ16245 transceiver is designed to perform asynchronous two-way communication and signal buffering. balanced outputs and low "on" output impedance make the UT54ACTQ16245 well suited for driving high capacitance loads and low impedance backplanes. the transmit/receive input (t/r ) controls the direction of data flow through the de- vice. the output enable input (oe n, active low) overrides the direction control (t/r ) and disables both the a and b ports by placing them in a high impedan ce state. these signals can be driven from either port a or b. the direction and output enable controls operate these devices as either two independent 8-bit transceivers or one 16-bit transceiver logic symbol pin description function table pin names description oe n output enable input (active low) t/r n direction control inputs a0-a15 side a inputs or 3-state outputs b0-b15 side b inputs or 3-state outputs enable oe n direction t/r n operation l l b data to a bus l h a data to b bus h x isolation, high-z state on bus a and bus b (48) oe 1 g2 (47) a0 (46) a1 (44) (2) b0 (5) (3) b1 a2 (43) a3 (41) a4 (40) a5 b2 (9) b5 (8) b4 (6) b3 (38) a6 (37) a7 (12) b7 (11) b6 (1) t/r 1 1en1 (ba) 1en2 (ab) 11 12 (25) oe 2 g1 (24) t/r 2 21 22 (36) a8 b8 (13) (35) a9 (33) a10 (32) a11 (30) a12 (29) a13 (27) a14 (26) a15 (16) b9 b10 (20) b13 (19) b12 (17) b11 (23) b15 (22) b14 (14) 2en1 (ba) 2en2 (ab)
2 pinouts 1 2 3 4 5 7 6 48 47 46 45 44 42 43 t/r 1 b0 b1 v ss b2 b3 v dd oe 1 a0 a1 v ss a2 v dd 8 41 b4 a4 a3 9 40 b5 a5 10 39 v ss v ss 48-lead flatpack top view b6 b7 b8 b9 v ss b10 b11 v dd b12 b13 11 12 13 14 15 17 16 18 19 20 v ss b14 b15 t/r 2 21 22 23 24 38 37 36 35 34 32 33 a6 a7 a8 a9 v ss a11 31 v dd a10 30 a12 29 a13 28 v ss 27 a14 26 a15 25 oe 2
3 logic diagram a0 a1 a2 a3 a4 a5 a6 a7 t/r 1 (1) (47) (48) (2) (46) (3) (44) (5) (43) (6) (41) (8) (40) (9) (38) (11) (37) (12) b0 b1 b2 b5 b4 b3 b7 b6 oe 1 a8 a9 a10 a11 a12 a13 a14 a15 t/r 2 (24) (36) (25) (13) (35) (14) (33) (16) (32) (17) (30) (19) (29) (20) (27) (22) (26) (23) b8 b9 b10 b13 b12 b11 b15 b14 oe 2
4 radiation hardness specifications 1 notes: 1. logic will not latchup during radia tion exposure within the limits v dd = 5.5v, t = 125 o c. 2. not tested, inherent of cmos technology. 3. this device contains no memory st orage elements which can be upset. absolute maximum ratings 1 note: 1. stresses outside the listed absolute maxi mum ratings may cause permanent damage to the device. this is a stress rating only, functional operation of the device at these or any other conditions beyond limits in dicated in the operational s ections is not reco mmended. exposure to absolute maxi mum rating conditions for extended periods may affect device reliability and performance. recommended operating conditions parameter limit units total dose 1.0e5 rad(si) sel latchup >108 mev-cm 2 /mg seu onset let n/a 3 mev-cm 2 /mg neutron fluence 2 1.0e14 n/cm 2 symbol parameter limit (mil only) units v i/o voltage any pin during operation -.3 to v dd +.3 v v dd supply voltage -0.3 to 6.0 v t stg storage temperature range -65 to +150 ? c t j maximum junction temperature +175 ? c ? jc thermal resistance junction to case 20 ? c/w i i dc input current ? 10 ma p d maximum power dissipation 310 mw symbol parameter limit units v dd supply voltage 4.5 to 5.5 v v in input voltage any pin 0 to v dd v t c temperature range -55 to + 125 ? c t inrise t infall maximum input rise or fall time (v in transitioning between v il (max) and v ih (min)) 20 ns
5 dc electrical characteristics 1 ( -55 ? c < t c < +125 ? c) symbol parameter condition min max unit v il low level input voltage 2 v dd from 4.5v to 5.5v 0.8 v v ih high level input voltage 2 v dd from 4.5 v to 5.5v 2.0 v i in input leakage current v dd from 4.5v to 5.5v v in = v dd or v ss -1 1 ? a i oz three-state output leakage current v dd from 4.5v to 5.5v v in = v dd or v ss -10 10 ? a i os short-circuit output current 3,4 v o = v dd or v ss v dd from 4.5v to 5.5v -600 600 ma v ol1 low-level output voltage 5 i ol = 24ma -55 ? c, 25 ? c i ol = 24ma +125 ? c i ol = 100 ? a v in = 2.0v or 0.8v v dd = 4.5v to 5.5v 0.35 0.5 0.2 v v ol2 low-level output voltage 5,6 i ol = 50 ma -55 ? c, 25 ? c v in = 2.0v or 0.8v v dd = 5.5v 0.8 v v oh1 high-level output voltage 5 i oh = -24 ma -55 ? c, 25 ? c i ol = -24ma +125 ? c i oh = -100 ? a v in = 2.0v or 0.8v v dd = 4.5v to 5.5v v dd - 0.64 v dd - 0.8 v dd - 0.2 v v oh2 high-level output voltage 5, 6 i oh = -50 ma -55 ? c, 25 ? c v in = 2.0v or 0.8v v dd = 5.5v v dd - 1.1 v v ic + positive input clamp voltage for input under test, i in = 18ma v dd = 0.0v 0.4 1.5 v v ic - negative input clamp voltage for input under test, i in = -18ma v dd = open -1.5 -0.4 v p total power dissipation 7, 8, 9 c l = 20pf v dd from 4.5v to 5.5v 1.5 mw/mhz +125 ? c +125 ? c v dd - 1.3 1.0
6 notes: 1. all specifications valid for radiation dose ? 1e5 rad(si) per mil-std-883, method 1019. 2. functional tests are conducted in accordance with mil-std-883 with th e following input test conditions: v ih = v ih (min) + 20%, - 0%; v il = v il (max) + 0%, - 50%, as specified herein, for ttl, cmos, or schmitt compatible inputs. devices may be tested using any input voltage within the above specified range, but are guaranteed to v ih (min) and v il (max). 3. not more than one output may be shorted at a time for maximum duration of one second. 4. supplied as a design limit, but not guaranteed or tested. 5. per mil-prf-38535, for current density ? 5.0e5 amps/cm 2 , the maximum product of load cap acitance (per output buffer) times frequency should not exceed 3,765 pf-mhz. 6. transmission driving tests are performed at v dd = 5.5v, only one output loaded at a tim e with a duration not to exceed 2ms. th e test is guaranteed, if not tested, for v in =v ih minimum or v il maximum. 7. guaranteed by characterization. 8. power does not include power contri bution of any cmos output sink current. 9. power dissipation specifi ed per switching output. 10.capacitance measured for initial qualification and when design changes may affect the value. capacitance is measured between the designated terminal and v ss at frequency of 1mhz and a signal amplitude of 50mv rms maximum. 11. this test is for qualification only. v ss and v dd bounce tests are performed on a non-switching (quiescent) output and are used to measure the magnitude of induced noise caused by other simultaneously switching outputs. the test is performed on a low noise bench test fixture. i ddq standby supply current v dd pre-rad 25 o c pre-rad -55 o c to +125 o c post-rad 25 o c v in = v dd or v ss v dd = 5.5v oe n = v dd oe n = v dd oe n = v dd 10 160 160 ? a ? i ddq quiescent supply current delta, ttl in- put level for input under test v in = v dd - 2.1v for other inputs v in = v dd or v ss v dd = 5.5v 1.6 ma c in input capacitance 10 ? = 1mhz @ 0v v dd from 4.5v to 5.5v 15 pf c out output capacitance 10 ? = 1mhz @ 0v v dd from 4.5v to 5.5v 15 pf v olp v olv low level v ss bounce noise 11 v in = 3.0v, v il = 0.0v, t a =+25 o c, v dd = 5.0v 1200 -1500 mv mv v ohp v ohv high level v dd bounce noise 11 see figure "quiet output under test" v oh +1500 v oh -1600 mv mv
7 ac electrical characteristics 1 (v dd = 5v ? 10%, -55 ? c < t c < +125 ? c) notes: 1. all specifications va lid for radiation dose ? 1e5 rad(si) per mil-std-883, method 1019. 2. t/r n to bus times are guaranteed by design, but not tested. oe x to bus times are tested 3. output skew is defined as a comparison of any two output transitio ns high-to-low vs. high-to-lo w and low-to-high vs low-to-h igh. 4. differential skew is defined as a compar ison of any two output tran sitions high-to-low vs. low-to -high and low-to-high vs hi gh-to low. 5. guaranteed by character ization, but not tested. symbol parameter condition min max unit t plh propagation delay data to bus c l = 40 pf 3 8.5 ns t phl propagation delay data to bus r l = 50 ? 38.5ns t pzl1 output enable time oe n to bus see figure "test load" 310ns t pzh1 output enable time oe n to bus 3 10 ns t plz1 output disable time oe n to bus high impedance 2.5 9.5 ns t phz1 output disable time oe n to bus high impedance 2.5 9.5 ns t pzl2 2 output enable time t/r n to bus 2.5 13 ns t pzh2 2 output enable time t/r n to bus 2.5 13 ns t plz2 2 output disable time t/r n to bus high impedance 1.5 15 ns t phz2 2 output disable time t/r n to bus high impedance 1.5 15 ns t skew 3 skew between outputs - 1.0 ns t dskew 4 differential skew between outputs - 1.25 ns t skewpp 3,5 part-to-part output skew 500 ps
8 t plzn t pzhn t pzln t phzn control input 5v output normally low enable disable times 5v output normally high 3.0v 1.5v 0v v dd /2 v dd /2 .8v dd .2v dd v dd /2+0.2 v dd /2-0.2 .2v dd + .2v .8v dd - .2v t phl propagation delay input output 3.0v 1.5v 0v t plh v oh v ol v dd /2 bounce noise active outputs v oh v ol quiet outputs under test v olp v olv v ol v ohp v oh v ohv v ss test load or equivalent 1 v dd 40pf 100ohms v dd 100ohms notes 1. equivalent test circuit means that dut performance will be co rrelated and remain guaranteed to the applicable test circuit, above, whenever a test platform change necessitates a deviation fr om the applicable test circuit.
9 package figure 1. 48-lead flatpack note: 1. seal ring is connected to v ss . 2. units are in inches. 3. all exposed metalized areas must be gold plated 100 to 225 microinches thick. dyer electroplated nickel undercoating 100 to 350 microinches per mil-prf-38535.
10 ordering information UT54ACTQ16245: smd lead finish: (notes 1 & 2) (a) = hot solder dip (c) = gold (x) = factory option (gold or solder) case outline: (x) = 48 lead bb fp (gold only) class designator: (q) = class q (v) = class v device type (01) = 16-bit bi-directional transceiver (4.5v - 5.5v) drawing number: 06244 total dose: (note 3) (r) = 1e5 rad(si) federal stock class designator: no options 5962 r 06244 ** * * * notes: 1. lead finish (a,c, or x) must be specified. 2. if an ?x? is specified when ordering, part marking will match the lead finish and will be either ?a? (solder) or ?c? (gold). 3.total dose radiation must be specified when orde ring. qml q not available w ithout radiation hardening.
11 UT54ACTQ16245 ut54 *** ****** -* * * lead finish: (notes 1 & 2) (a) = hot solder dip (c) = gold (x) = factory option (gold or solder) screening: (notes 3 & 4) (c) = mil temp (p) = prototype package type: (u) = 48-lead bb fp part number: (16245) = 16-bit bi-dir ectional transceiver i/o type: (actq)= cmos compatible i/o level aeroflex core part number notes: 1. lead finish (a, c, or x) must be specified. 2. if an ?x? is specified when ordering, then the part marking will match the lead fini sh and will be either ?a? (solder) or ?c? (gold). 3. prototype flow per aeroflex manufact uring flows document. tested at 25 ? c only. lead finish is gold "c" only. radiation neither tested nor guaranteed. 4. military temperature range flow per aeroflex manuf acturing flows document. devices are tested at -55 ? c, room temp, and 125 ? c. radiation neither tested nor guaranteed.
12 colorado toll free: 800-645-8862 fax: 719-594-8468 se and mid-atlantic tel: 321-951-4164 fax: 321-951-4254 international tel: 805-778-9229 fax: 805-778-1980 west coast tel: 949-362-2260 fax: 949-362-2266 northeast tel: 603-888-3975 fax: 603-888-4585 central tel: 719-594-8017 fax: 719-594-8468 www.aeroflex.com info-ams@aeroflex.com our passion for performance is defined by three attributes represented by these three icons: solution-minded, performance-driven and customer-focused aeroflex colorado springs, inc., reserves the right to make changes to any products and services herein at any time without notice. consult aeroflex or an authorized sales representative to verify that the information in this data sheet is current before using this product. aeroflex does not assume any responsibility or liability arising out of the application or use of any product or service described herein, except as expressly agreed to in writing by aeroflex; nor does the purchase, lease, or use of a pr oduct or service from aeroflex convey a license under any patent rights, copyrights, trademark rights, or any other of the intellectual rights of aeroflex or of third parties. aeroflex colorado spring s - datasheet definition advanced datasheet - product in development preliminary datasheet - shipping prototype datasheet - shipping qml & reduced hi-rel

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