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this is information on a product in full production. july 2014 docid026115 rev 2 1/17 STH240N10F7-2, sth240n10f7-6 n-channel 100 v, 0.002 ? typ., 180 a stripfet? f7 power mosfets in h 2 pak-2 and h 2 pak-6 packages datasheet - production data figure 1. internal schematic diagram features ? ultra low on-resistance ? 100% avalanche tested applications ? high current switching applications description these n-channel power mosfets utilize the stripfet? f7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. h 2 pak-2 1 3 tab 2 h 2 pak-6 1 tab 7 order codes v ds r ds(on) max. i d STH240N10F7-2 100 v 0.0025 ? 180 a sth240n10f7-6 table 1. device summary order codes marking package packaging STH240N10F7-2 240n10f7 h 2 pak-2 tape and reel sth240n10f7-6 h 2 pak-6 www.st.com
contents STH240N10F7-2, sth240n10f7-6 2/17 docid026115 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.1 h2pak-2, STH240N10F7-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.2 h2pak-6, sth240n10f7-6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 docid026115 rev 2 3/17 STH240N10F7-2, sth240n10f7-6 electrical ratings 17 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 100 v v gs gate-source voltage 20 v i d (1) 1. current limited by package. drain current (continuous) at t c = 25c 180 a i d (1) drain current (continuous) at t c =100c 120 a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 720 a p tot total dissipation at t c = 25c 300 w e as (3) 3. starting t j =25c, i d =45a, v dd =50v single pulse avalanche energy 500 mj t j operating junction temperature - 55 to 175 c t stg storage temperature table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case 0.5 c/w r thj-pcb (1) 1. when mounted on 1 inch2 fr-4, 2 oz copper board thermal resistance junction-pcb 35 c/w electrical characteristics STH240N10F7-2, sth240n10f7-6 4/17 docid026115 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified). table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 250 a 100 v i dss zero gate voltage drain current v gs = 0, v ds = 100 v 1 a v gs = 0, v ds = 100 v, t c = 125c 100 a i gss gate body leakage current v ds = 0, v gs = +20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.5 4.5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 60 a 0.002 0.0025 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs = 0, v ds = 25 v, f = 1 mhz - 11550 - pf c oss output capacitance - 2950 - pf c rss reverse transfer capacitance -217- pf q g total gate charge v dd = 50 v, i d = 180 a, v gs = 10 v (see figure 14 ) -160- nc q gs gate-source charge - 48 - nc q gd gate-drain charge - 38 - nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 50 v, i d = 90 a r g =4.7 ? v gs = 10 v (see figure 13 , figure 18 ) -49-ns t r rise time - 139 - ns t d(off) turn-off delay time - 110 - ns t f fall time - 112 - ns docid026115 rev 2 5/17 STH240N10F7-2, sth240n10f7-6 electrical characteristics 17 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 180 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) -720a v sd (2) 2. pulse duration = 300s, duty cycle 1.5% forward on voltage v gs =0, i sd =180 a - 1.2 v t rr reverse recovery time i sd =180 a, di/dt = 100 a/s, v dd =64 v, tj=150c (see figure 15 ) -108 ns q rr reverse recovery charge - 315 nc i rrm reverse recovery current - 5.8 a electrical characteristics STH240N10F7-2, sth240n10f7-6 6/17 docid026115 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance , ' 9 ' 6 9 $ 2 s h u d w l r q l q w k l v d u h d l v / l p l w h g e \ p d [ 5 ' 6 r q ? v p v p v 7 m ? & 7 f ? & 6 l q j o h s x o v h * , 3 * 6 $ / 6 l q j o h s x o v h . w s v * , 3 * 6 $ , ' 9 ' 6 9 $ 9 9 * 6 9 9 9 * , 3 * 6 $ , ' 9 * 6 9 $ 9 ' 6 9 * , 3 * 6 $ 9 * 6 4 j q & |