features trenchfet power mosfet applications load switch pa switch charger switch SI6411DQ vishay siliconix new product document number: 72113 s-3159?rev. a, 17-feb-03 www.vishay.com 1 p-channel 20-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) 0.01125 @ v gs = - 4.5 v - 9.5 -20 0.01425 @ v gs = - 2.5 v - 8.5 0.0185 @ v gs = - 1.8 v - 7.3 SI6411DQ d s s g 1 2 3 4 8 7 6 5 d s s d tssop-8 top view s* g d p-channel mosfet * source pins 2, 3, 6 and 7 must be tied common. absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds -20 v gate-source voltage v gs 8 v continuous drain current (t j = 150 c) a t a = 25 c i d - 9.5 - 7.5 continuous drain current (t j = 150 c) a t a = 70 c i d - 7.5 -6 a pulsed drain current (10 s pulse width) i dm -30 a continuous source current (diode conduction) a i s - 1.5 - 0.95 maximum power dissipation a t a = 25 c p d 1.75 1.08 w maximum power dissipation a t a = 70 c p d 1.14 0.69 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 10 sec r 55 70 maximum junction-to-ambient a steady state r thja 95 115 c/w maximum junction-to-foot steady state r thjf 38 50 c/w notes a. surface mounted on 1? x 1? fr4 board.
SI6411DQ vishay siliconix new product www.vishay.com 2 document number: 72113 s-3159?rev. a, 17-feb-03 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = - 500 a - 0.40 - 0.8 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = - 16 v, v gs = 0 v -1 a zero gate voltage drain current i dss v ds = - 16 v, v gs = 0 v, t j = 70 c -10 a on-state drain current a i d(on) v ds -5 v, v gs = - 4.5 v -20 a v gs = - 4.5 v, i d = - 9.5 a 0.009 0.01125 drain-source on-state resistance a r ds(on) v gs = - 2.5 v, i d = - 8.5 a 0.0115 0.01425 ds(on) v gs = - 1.8 v, i d = - 7.5 a 0.0147 0.0185 forward transconductance a g fs v ds = - 15 v, i d = - 9.5 a 45 s diode forward voltage a v sd i s = - 1.5 a, v gs = 0 v - 0.64 - 1.1 v dynamic b total gate charge q g 55 85 gate-source charge q gs v ds = - 10 v, v gs = - 5 v, i d = - 9.5 a 7.2 nc gate-drain charge q gd 12 gate resistance rg 4.5 turn-on delay time t d(on) 45 70 rise time t r v dd = - 10 v, r l = 15 75 115 turn-off delay time t d(off) v dd = - 10 v , r l = 15 i d - 1 a, v gen = - 4.5 v, r g = 6 240 360 ns fall time t f 110 170 source-drain reverse recovery time t rr i f = - 1.5 a, di/dt = 100 a/ s 80 120 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0 6 12 18 24 30 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 0 6 12 18 24 30 012345 v gs = 5 thru 2 v t c = 125 c -55 c 25 c output characteristics transfer characteristics v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d 1.0 v 1.5 v
SI6411DQ vishay siliconix new product document number: 72113 s-3159?rev. a, 17-feb-03 www.vishay.com 3 typical characteristics (25 c unless noted) 0 1300 2600 3900 5200 6500 024681012 - on-resistance ( r ds(on) ) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 0 1428425670 0.000 0.005 0.010 0.015 0.020 0.025 0 6 12 18 24 30 v ds - drain-to-source voltage (v) c rss v ds = 10 v i d = 9.5 a i d - drain current (a) v gs = 4.5 v i d = 9.5 a gate charge on-resistance vs. drain current - gate-to-source voltage (v) q g - total gate charge (nc) c - capacitance (pf) v gs capacitance on-resistance vs. junction t emperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.01 0.02 0.03 0.04 0.05 012345678 t j = 25 c i d = 9.5 a 30 10 0.1 source-drain diode forward v oltage on-resistance vs. gate-to-source voltage - on-resistance ( r ds(on) ) v sd - source-to-drain voltage (v) v gs - gate-to-source voltage (v) - source current (a) i s v gs = 4.5 v t j = 150 c v gs = 2.5 v v gs = 1.8 v c oss c iss 1
SI6411DQ vishay siliconix new product www.vishay.com 4 document number: 72113 s-3159?rev. a, 17-feb-03 typical characteristics (25 c unless noted) - 0.4 - 0.3 - 0.2 - 0.1 - 0.0 0.1 0.2 0.3 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 550 a threshold v oltage variance (v) v gs(th) t j - temperature ( c) safe operating area, junction-to-case v ds - drain-to-source voltage (v) 100 1 0.1 1 10 100 0.01 10 100 ms - drain current (a) i d 0.1 limited by r ds(on) t c = 25 c single pulse 1 s 10 s dc 10 ms 0 30 50 10 20 power (w) single pulse power, junction-to-ambient time (sec) 40 110 10 -1 10 -2 60 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 95 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
SI6411DQ vishay siliconix new product document number: 72113 s-3159?rev. a, 17-feb-03 www.vishay.com 5 typical characteristics (25 c unless noted) 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance
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