View CHA2080-98F-15_8440263.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

cha2080 - 98f ref. : dscha20802355 - 20 dec 12 1 / 12 specifications subject to change without notice united monolithic semiconductors s.a.s. bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fa x: +33 (0) 1 69 86 34 34 71 - 86ghz low noise amplifier gaas monolithic microwave ic description functional diagram the cha2080 - 98f is a low noise amplifier with variable gain. this circuit integrates four stages and provides 3.5db noise figure associated to 22db gain and +10dbm output power at 1db compression. this amplifier is dedicated to telecommunication, particularly well suited for the two main e - bands used in new generation of high capacity backhaul. it is manufactured with a phemt process, 0.1m gate length, via holes through the substrate, air bridges, electron beam gate lithography and is available in chip form with bcb laye r protection. main features typical linear gain and noise figure main electrical characteristics tamb.= +25c symbol parameter min typ max unit freq frequency range 71 86 ghz gain linear gain 22 db nf noise figure 3.5 db pout output power @1db compression 10 dbm 0 4 8 12 16 20 24 28 65 70 75 80 85 90 associated gain & nf (db) frequency (ghz)
cha2080 - 98f 71 - 86ghz low noise ampli fier ref. : dscha20802355 - 20 dec 12 2 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 electrical characteristics tamb.=+25c, vd=+3.5v, id=75ma symbol parameter min typ max unit fop frequency range 71 86 ghz gain* linear gain 22 db ? absolute maximum ratings (1) tamb.= +25c symbol parameter values unit vd drain bias voltage 4 v id drain bias current 95 ma vg gate bias voltage - 3 to +0.4 v pin maximum peak input power overdrive (2) +0 dbm tj junction temperature 175 c ta operating temperature range - 40 to +85 c tstg storage temperature range - 55 to +150 c (1) operation of this device above anyone of these parameters may cause permanent damage. (2) duration < 1s.
71 - 86ghz low noise amplifier cha2080 - 98f ref. : dscha20802355 - 20 dec 12 3 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical on - wafer sij parameters tamb.=+25c, vd=+3.5v, id=75ma freq (ghz) s11 (db) phs11 () s12 (db) phs12 () s21 (db) phs21 () s22 (db) phs22 () 68 - 3.3 9 - 39.7 152 19.5 106 - 10.3 73 68.5 - 4.3 - 5 - 45.9 160 19.9 86 - 9.6 58 69 - 5.4 - 21 - 45 159 20.8 63 - 8.7 59 69.5 - 6.8 - 36 - 47.7 166 21.2 42 - 9.8 63 70 - 8.1 - 51 - 42.8 160 21.5 21 - 11.6 62 70.5 - 9.3 - 66 - 42.3 144 21.7 0 - 12.8 57 71 - 10.4 - 82 - 44.5 132 21.8 - 19 - 12.8 52 71.5 - 11.6 - 98 - 43.8 119 21.7 - 39 - 11.3 47 72 - 12.7 - 115 - 44.5 123 21.6 - 58 - 10.4 45 72.5 - 14.5 - 135 - 44.7 111 21.6 - 77 - 11 44 73 - 14.9 - 151 - 46.4 98 21.5 - 97 - 12.4 33 73.5 - 15.7 - 158 - 48.5 95 21.3 - 115 - 13 20 74 - 16.5 - 164 - 47.7 66 21.3 - 131 - 13.3 10 74.5 - 17.3 - 175 - 50.5 53 21.5 - 146 - 12.8 4 75 - 16.5 172 - 53.6 2 21.4 - 164 - 12.9 - 4 75.5 - 17 160 - 52.2 1 21.5 180 - 14.5 - 13 76 - 17 151 - 54.4 - 34 21.5 163 - 14.9 - 32 76.5 - 17.2 139 - 56.9 - 65 21.6 146 - 15.3 - 48 77 - 17.6 123 - 53.5 - 86 21.7 128 - 15.3 - 57 77.5 - 19.4 107 - 51.8 - 101 21.7 110 - 15.5 - 71 78 - 20.6 87 - 50.1 - 131 21.9 91 - 15.7 - 94 78.5 - 24.8 55 - 48.8 - 158 22.1 74 - 15.7 - 117 79 - 30.8 16 - 49.4 - 174 22.1 55 - 15 - 139 79.5 - 29.3 - 56 - 50.1 165 22.1 34 - 15.2 - 160 80 - 28.6 - 109 - 50.8 145 22 15 - 16 - 177 80.5 - 24.2 - 130 - 49.7 143 21.8 - 3 - 15.8 164 81 - 21.4 - 154 - 50.2 113 21.5 - 22 - 15.4 146 81.5 - 19.6 - 172 - 53.8 88 21.3 - 40 - 15.1 131 82 - 18.1 173 - 53.2 70 21.2 - 58 - 15 118 82.5 - 17 156 - 64.1 43 21 - 78 - 15.4 102 83 - 15.7 139 - 59.5 88 20.9 - 96 - 15.4 86 83.5 - 14.3 122 - 61.6 85 20.9 - 115 - 15.2 72 84 - 12.8 101 - 59.4 29 20.8 - 136 - 14.5 60 84.5 - 11.3 82 - 60.9 15 20.5 - 157 - 13.7 41 85 - 10 60 - 53.3 - 39 20.5 - 180 - 14.6 30 85.5 - 8.8 42 - 51.4 - 73 20.4 159 - 15 18 86 - 7.7 24 - 51 - 108 19.9 136 - 15.6 0 86.5 - 6.6 7 - 51.5 - 130 19.9 109 - 16.8 - 8 87 - 5.7 - 9 - 50.9 - 148 19.6 84 - 17 - 1 87.5 - 4.9 - 24 - 50.8 - 165 18.6 51 - 16.7 1 88 - 4.3 - 40 - 50 171 17 18 - 15.2 2 88.5 - 4 - 54 - 51.2 137 14.2 - 12 - 13.9 - 7 89 - 3.9 - 67 - 51.7 110 10.8 - 41 - 12.7 - 18
cha2080 - 98f 71 - 86ghz low noise ampli fier ref. : dscha20802355 - 20 dec 12 4 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical on wafer measurements tamb.=+25c, vd =+3.5v, id=75ma linear gain & return losses versus frequency linear gain versus vg voltage - 30 - 25 - 20 - 15 - 10 - 5 0 5 10 15 20 25 30 65 70 75 80 85 90 gain & return losses (db) frequency (ghz) s11 s21 s22 - 5 0 5 10 15 20 25 30 65 70 75 80 85 90 gain (db) frequency (ghz) - 2v - 2.4v - 2.6v - 2.8v - 3v
71 - 86ghz low noise amplifier cha2080 - 98f ref. : dscha20802355 - 20 dec 12 5 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical on wafer measurements tamb.=+25c, vd=+3.5v, id=75ma input return loss versus vg voltage output return loss versus vg voltage noise figure versus vg voltage - 30 - 25 - 20 - 15 - 10 - 5 0 65 70 75 80 85 90 s11 (db) frequency (ghz) - 2v - 2.4v - 2.6v - 2.8v - 3v - 30 - 25 - 20 - 15 - 10 - 5 0 65 70 75 80 85 90 s22 (db) frequency (ghz) - 2v - 2.4v - 2.6v - 2.8v - 3v 0 1 2 3 4 5 6 7 8 9 10 65 70 75 80 85 90 noise figure (db) frequency (ghz) - 2v - 2.4v - 2.6v - 2.8v - 3v
cha2080 - 98f 71 - 86ghz low noise ampli fier ref. : dscha20802355 - 20 dec 12 6 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical on wafer measurements tamb.=+25c, vd=+3.5v, id=75ma output power at 1 db compression versus vg voltage input power at 1 db compression versus vg voltage - 5 - 3 - 1 1 3 5 7 9 11 13 15 69 74 79 84 89 pout at 1db comp. (dbm) frequency (ghz) - 2v - 2.4v - 2.6v - 2.8v - 3v - 20 - 18 - 16 - 14 - 12 - 10 - 8 - 6 - 4 - 2 0 69 74 79 84 89 pin at 1db comp. (dbm) frequency (ghz) - 2v - 2.4v - 2.6v - 2.8v - 3v
71 - 86ghz low noise amplifier cha2080 - 98f ref. : dscha20802355 - 20 dec 12 7 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical test fixture measurements tamb.= - 40c / +25c / +85c, vd=+3.5v id=75 ma @ +25c measurements are given in the test fixture access plans linear gain versus temperature input return loss versus temperature output return loss versus temperature 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 linear gain (db) frequency (ghz) - 40 c 25 c 85 c - 40 - 35 - 30 - 25 - 20 - 15 - 10 - 5 0 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 input return loss (db) frequency (ghz) - 40 c 25 c 85 c - 40 - 35 - 30 - 25 - 20 - 15 - 10 - 5 0 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 output return loss (db) frequency (ghz) - 40 c 25 c 85 c
cha2080 - 98f 71 - 86ghz low noise ampli fier ref. : dscha20802355 - 20 dec 12 8 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 mechanical data chip thickness: 70m. 10m chip size: 3350x1120 35m all dimensions are in micrometers rf pads (4,7) = 108 x 106 (bcb opening) dc pads = 86 x 83 (bcb opening) pin number pin name description 0, 3, 5 gnd ground: should not be bonded 4 out rf output port 7 in rf input port 6 vd positive supply voltage 1 vg12 negative supply voltage for the first & second stage 2 vg34 negative supply voltage for the third and fourth stage
71 - 86ghz low noise amplifier cha2080 - 98f ref. : dscha20802355 - 20 dec 12 9 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended chip assembly the design of the circuit integrates a half ribbon (75m wide) connection at the input and the output of the mmic amplifier compliant with a 50 ohm line on gaas mmic. circuits having to be as close as possible to each other, the ribbon length must be reduced to the achievable minimum (160m gap between two chips is considered) and the loop height must also be the smallest realizable (80m). a second solution is the use of double wires (? 25m). in this case, a minimum of two wires and the same chip t o chip distance than ribbon solution are necessary to reduce the inductance effect. nevertheless, simulations have demonstrated an improvement of rf performance for e - band frequency range with the use of ribbon connection instead of wire. regarding the connection of the dc pads, a 25m wedge bonding is preferred. 120pf 120pf 120pf 160m gap 75m ribbon to vg power supply 10nf 10nf ribbon(w75m,length330m ) mmic cha2080 hyper access 160m hyper access 85m
cha2080 - 98f 71 - 86ghz low noise ampli fier ref. : dscha20802355 - 20 dec 12 10 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 dc schematic lna: 3.5v, 75ma
71 - 86ghz low noise amplifier cha2080 - 98f ref. : dscha20802355 - 20 dec 12 11 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 notes
cha2080 - 98f 71 - 86ghz low noise ampli fier ref. : dscha20802355 - 20 dec 12 12 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended esd management refer to the application note an0020 available at http://www.ums - gaas.com for esd sensitivity and handling recommendations for the ums products. recommended environmental management ums products are compliant with the regulation in particular with the directives rohs n2011/65 and reach n1907/2006. mo re environmental data are available in the application note an0019 also available at http://www.ums - gaas.com . ordering information chip form: cha2080 - 98f /00 information furnished is believed to be accurate and reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in thi s publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.

▲Up To Search▲

Price & Availability of CHA2080-98F-15

	To Download CHA2080-98F-15 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .