schottky die specification type: MBR560 60 v 5 a ( low ir) single anode sym die sort unit dc blocking voltage: ir=1ma(for wafer form) vrrm 63 volt ir=0.5ma (for dice form) ifav amp vf max 0.645 volt 0.82 ir max 0.08 ma cj max pf ifsm amp tj c tstg c specification apply to die only. actual performance may degrade when assembled. memt does not guarantee device performance after assembly. data sheet information is subjected to change without notice. dim um 2 mil 2 a 1838 72.36 b 1738 68.4 c 1758 69.2 d 254 10 305 12 operating junction temperature storage temperatures item die size dice outline drawing maximum junction capacitance @ 0v, 1mhz maximum ratings nonrepetitive peak surge current vr= 60 volt, ta=25c electrical characteristics average rectified forward current maximum instantaneous forward voltage general description: 120 -65 to +125 -65 to +125 0.655 0.83 @ 5 amperes, ta=25c @ 15 amperes, 25c maximum instantaneous reverse voltage ps: (1)cutting street width is around 80um(3.14mil). (2)both of top-side and back-side metals are ti/ni/ag. thickness (max) 0.09 top metal pad size passivation seal thickness (min) micro-electro-magnetical tech co. spec. limit 60 5 b c a top-side metal d sio 2 passivation p + guard ring back-side metal
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