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triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 1 june 29, 2007 0.2- 20 ghz sp4t pin switch TGS2304-SCC key features and performance ? 0.2 to 20 ghz frequency range ? 0.6 db typical midband insertion loss ? 38 db typical midband isolation ? typical input / output swr 1.2:1, midband ? 23 db typical input power at 1 db gain compression ? 2.5 x 3.6 x 0.1 mm (0.100 x 0.140 x 0.004 in.) description the triquint TGS2304-SCC is a gaas monolithic pin-diode single-pole, four-throw switch, in chip form, that operates from 0.2 to 20 ghz. each arm consists of one series and two shunt pin diodes. at a bias current of 10 ma per rf output arm, typical midband insertion loss is 0.6 db; midband return loss is approximately 20 db. typical isolation at 10 ma bias is 40 db. insertion loss and isolation can be adjusted by varying the switch arm bias currents. using a gaas vertical pin diode process, triquint has produced switches with high power handling capability, lo w on-state resistance, and low off-state capacitance. the higher cutoff frequency of the pin diode element makes this switch ideal for broadband electronic components and communication systems wherein the mmic construction offers reduced size, cost, and assembly time. bond pad and backside metallization is gold plated for compatibility with eutec tic alloy attach methods as well as thermocompression and thermosonic wire-bonding processes.
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 2 june 29, 2007 TGS2304-SCC typical input power p 1db typical insertion loss typical isolation
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 3 june 29, 2007 TGS2304-SCC typical return loss typical insertion loss vs. control bias current typical isolation vs. control bias current
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 4 june 29, 2007 typical input return loss vs. control bias current TGS2304-SCC typical output return loss vs. control bias current typical insertion loss vs. control bias current
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 5 june 29, 2007 TGS2304-SCC typical isolation vs. control bias current typical input return loss vs. control bias current typical input return loss vs. control bias current
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 6 june 29, 2007 TGS2304-SCC absolute maximum ratings forward voltage, v f ??????????????????????????????????.. 2.5 v forward voltage, v r ??????????????????????????????????.. 30 v bias current??????????????????????????????????????. 50 ma power dissipation, p diss ????????????????????????????????? 0.2 w/arm input continuous wave power, p in ????????????????????????????? 2 w operating channel temperature, t ch ???????????????????????????? 150 o c mounting temperature (30 sec.), t m ????????????????????????????. 320 o c storage temperature range, t stg ?????????????????????????????. - 65 t o 150 o c ratings over operating channel temperature range, t ch (unless otherwise noted). stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. exposure to absolute maximum rated conditions for extended periods may affect device reliab ility. dc blocks are not provi ded at rf ports. table i dc probe tests (100%) (t a = 25 c, nominal) notes symbol test conditions 1/ limits units 2/ min max 1/ brev i r = 10 a 30 60 v res i f = 10 ? 20 ma 2.50 5.05 o hms 1/ brev is negative. 2/ test conditions and limits apply to all diodes (d1 ? d12).
table ii electrical characteristics (t a = 25o c, nominal) test through path identification me asurement conditions value units state 1 / min typ max insertion loss rf input to rf output 3 f = 0.2 - 5 ghz f = 5 - 18 ghz f = 18 - 20 ghz - - - 0.4 0.7 1.3 0.5 1.4 2 db c rf input to rf output 2 f = 0.2 - 5 ghz f = 5 - 18 ghz f = 18 - 20 ghz - - - 0.4 0.6 1 0.5 1 1.8 a isolation rf input to rf output 3 f = 0.2 - 17.9 ghz f = 18 ? 20 ghz 30 28.5 38 32 - db d rf input to rf output 2 f = 0.2 - 15.9 ghz f = 16 ? 18 ghz f = 18.1 ? 20 ghz 36 33 36 44 40 44 - b input return loss rf input to rf output 3 f = 0.2 - 18 ghz f = 18 - 18.9 ghz f = 19 ? 20 ghz 8 7 5 16.5 9.6 8 - - db c rf input to rf output 2 f = 0.2 - 18 ghz f = 18 - 18.9 ghz f = 19 ? 20 ghz 10 7 6 14.9 11.4 8 - - a output return loss rf input to rf output 3 f = 0.2 - 18 ghz f = 18 - 18.9 ghz f = 19 ? 20 ghz 9 8 5 23.1 12 8 - - db c rf input to rf output 2 f = 0.2 - 18 ghz f = 18 - 18.9 ghz f = 19 ? 20 ghz 10 7.5 6 19.2 14 8 - - a 1 / see table iii product data sheet TGS2304-SCC june 29, 2007 7 triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 web: www.triquint.com
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 8 june 29, 2007 TGS2304-SCC table iii switch bias conditions rf output 3 rf output 2 state rf path rf input voltage current voltage current a low loss gnd +v +10 ma -v -10 ma b isolated gnd -v -10 ma +v +10 ma c low loss gnd -v -10 ma +v +10 ma d isolated gnd +v +10 ma -v -10 ma rf output 1 rf output 0 state rf path rf input voltage current voltage current a low loss gnd +v +10 ma +v +10 ma b isolated gnd +v +10 ma +v +10 ma c low loss gnd +v +10 ma +v +10 ma d isolated gnd +v +10 ma +v +10 ma
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 9 june 29, 2007 TGS2304-SCC typical s-parameters (through path) rf input to rf output 3, 0 frequency s 11 s 21 s 12 s 22 insertion loss (ghz) mag ang() mag ang() mag ang() mag ang() (db) 0.5 0.03 -36 0.962 -6 0.960 -6 0.04 -45 0.3 1.0 0.03 -63 0.963 -11 0.963 -11 0.05 -59 0.3 1.5 0.04 90 0.959 -17 0.961 -17 0.07 -65 0.4 2.0 0.04 -106 0.959 -23 0.959 -23 0.08 -69 0.4 2.5 0.05 -117 0.961 -28 0.958 -28 0.09 -74 0.3 3.0 0.05 -117 0.960 -34 0.959 -34 0.09 -82 0.4 3.5 0.06 -114 0.957 -40 0.957 -40 0.09 -94 0.4 4.0 0.07 -111 0.955 -46 0.954 -45 0.08 -110 0.4 4.5 0.08 -112 0.955 -51 0.953 -51 0.09 -129 0.4 5.0 0.10 -117 0.951 -57 0.951 -57 0.11 -143 0.4 5.5 0.12 -126 0.948 -63 0.948 -63 0.13 -152 0.5 6.0 0.14 -136 0.945 -69 0.946 -69 0.15 -159 0.5 6.5 0.15 -146 0.940 -75 0.941 -74 0.17 -164 0.5 7.0 0.15 -154 0.937 -80 0.937 -80 0.18 -167 0.6 7.5 0.15 -163 0.935 -86 0.933 -86 0.18 -171 0.6 8.0 0.15 -169 0.935 -91 0.932 -91 0.18 -175 0.6 8.5 0.13 -171 0.932 -97 0.933 -97 0.16 177 0.6 9.0 0.12 -166 0.938 -102 0.939 -102 0.14 169 0.6 9.5 0.11 -162 0.937 -108 0.936 -108 0.12 157 0.6 10.0 0.11 -158 0.937 -114 0.936 -114 0.11 142 0.6 10.5 0.12 -161 0.935 -120 0.933 -120 0.11 130 0.6 11.0 0.13 -167 0.932 -126 0.931 -126 0.13 120 0.6 11.5 0.14 -175 0.930 -132 0.929 -132 0.14 112 0.6 12.0 0.14 176 0.927 -138 0.924 -138 0.15 108 0.7 12.5 0.13 165 0.927 -144 0.926 -144 0.15 106 0.7 13.0 0.11 158 0.927 -150 0.926 -150 0.13 103 0.7 13.5 0.09 160 0.927 -156 0.926 -156 0.10 96 0.7 14.0 0.06 -171 0.926 -163 0.925 -163 0.06 75 0.7 14.5 0.10 -133 0.920 -169 0.919 -169 0.04 -4 0.7 15.0 0.15 -129 0.917 -175 0.915 -175 0.09 -44 0.8 15.5 0.18 -131 0.916 179 0.913 179 0.13 -57 0.8 16.0 0.21 -137 0.909 172 0.908 172 0.16 -63 0.8 16.5 0.23 -145 0.904 166 0.902 166 0.18 -68 0.9 17.0 0.24 -152 0.900 159 0.899 159 0.19 -72 0.9 17.5 0.24 -159 0.897 152 0.896 152 0.20 -77 0.9 18.0 0.25 -166 0.893 145 0.892 145 0.21 -87 1.0 18.5 0.27 -165 0.887 137 0.885 138 0.23 -104 1.0 19.0 0.31 -161 0.871 130 0.872 130 0.27 -124 1.2 19.5 0.34 -154 0.854 122 0.845 123 0.31 -143 1.4 20.0 0.39 -156 0.833 118 0.839 119 0.36 -156 1.6 t a = 25 o c, i = 10 ma the reference planes for s-parameter data include bond wires as specified in the test assembly diagram. the s-parameters are also available on floppy disk and the world wide web.
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 10 june 29, 2007 typical s-parameters (isolated path) rf input to rf output 3 TGS2304-SCC frequency s 11 s 21 s 12 s 22 is o la t io n (ghz) mag ang() mag ang() mag ang() mag ang() (db) 0.5 0.06 15 0.0005 -87 0.0005 -75 0.90 177 66.3 1.0 0.06 -2 0.0011 -113 0.0011 -119 0.90 173 59.2 1.5 0.05 -22 0.0017 -132 0.0017 -129 0.88 169 55.2 2.0 0.04 -5 0.0023 -151 0.0023 -149 0.87 166 52.8 2.5 0.06 -52 0.0029 -160 0.0029 -162 0.87 163 50.8 3.0 0.02 -34 0.0037 -168 0.0037 -170 0.86 158 48.6 3.5 0.08 -57 0.0041 -180 0.0041 -180 0.87 153 47.7 4.0 0.07 -103 0.0046 175 0.0046 175 0.87 148 46.7 4.5 0.05 -95 0.0054 167 0.0054 168 0.88 144 45.4 5.0 0.08 -112 0.0058 163 0.0058 161 0.88 141 44.7 5.5 0.08 -131 0.0064 158 0.0064 157 0.88 138 43.9 6.0 0.07 -149 0.0070 154 0.0070 155 0.89 136 43.1 6.5 0.12 -140 0.0076 151 0.0076 150 0.88 133 42.4 7.0 0.13 173 0.0082 151 0.0082 150 0.88 129 41.7 7.5 0.05 -169 0.0095 143 0.0095 142 0.88 126 40.4 8.0 0.11 177 0.0092 140 0.0092 141 0.88 123 40.7 8.5 0.04 170 0.0103 138 0.0103 138 0.87 119 39.7 9.0 0.06 -153 0.0109 135 0.0109 135 0.87 114 39.3 9.5 0.08 -141 0.0115 130 0.0115 130 0.87 111 38.8 10.0 0.09 -164 0.0120 126 0.0120 126 0.87 107 38.4 10.5 0.10 -171 0.0123 127 0.0123 128 0.87 102 38.2 11.0 0.14 165 0.0123 124 0.0123 124 0.87 96 38.2 11.5 0.12 97 0.0134 126 0.0134 126 0.87 90 37.5 12.0 0.10 141 0.0132 123 0.0132 122 0.87 86 37.6 12.5 0.13 69 0.0153 125 0.0153 125 0.87 84 36.3 13.0 0.09 32 0.0167 120 0.0167 121 0.88 83 35.6 13.5 0.09 -42 0.0179 113 0.0179 113 0.87 82 34.9 14.0 0.09 -84 0.0178 109 0.0178 109 0.86 78 35.0 14.5 0.18 -78 0.0188 104 0.0188 102 0.86 73 34.5 15.0 0.22 -148 0.0159 102 0.0159 102 0.85 67 36.0 15.5 0.07 -79 0.0197 103 0.0197 104 0.86 62 34.1 16.0 0.22 -128 0.0188 95 0.0188 95 0.85 56 34.5 16.5 0.08 76 0.0220 101 0.0220 102 0.85 52 33.2 17.0 0.28 -97 0.0229 76 0.0229 76 0.85 48 32.8 17.5 0.08 -140 0.0197 89 0.0197 89 0.85 46 34.1 18.0 0.24 -90 0.0257 77 0.0257 77 0.86 43 31.8 18.5 0.40 -133 0.0238 61 0.0238 62 0.86 39 32.5 19.0 0.16 -156 0.0232 71 0.0232 72 0.85 31 32.7 19.5 0.51 -141 0.0247 44 0.0247 46 0.86 23 32.2 20.0 0.43 -164 0.0201 48 0.0201 48 0.83 18 33.9 t a = 25 o c, i = 10 ma the reference planes for s-parameter data include bond wires as specified in the test assembly diagram. the s-parameters are also available on floppy disk and the world wide web.
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 11 june 29, 2007 TGS2304-SCC typical s-parameters (through path) rf input to rf output 2, 1 t a = 25 o c, i = 10 ma the reference planes for s-parameter data include bond wires as specified in the test assembly diagram. the s-parameters are also available on floppy disk and the world wide web. frequency s 11 s 21 s 12 s 22 insertion loss (ghz) mag ang() mag ang() mag ang() mag ang() (db) 0.5 0.03 -26 0.962 -6 0.964 -6 0.03 -33 0.3 1.0 0.03 -41 0.962 -12 0.963 -12 0.03 -49 0.3 1.5 0.04 -51 0.962 -18 0.963 -18 0.03 -61 0.3 2.0 0.05 -56 0.962 -24 0.962 -24 0.03 -72 0.3 2.5 0.05 -62 0.960 -29 0.960 -30 0.04 -81 0.4 3.0 0.05 -67 0.960 -35 0.959 -35 0.04 -86 0.4 3.5 0.04 -76 0.960 -41 0.957 -41 0.05 -91 0.4 4.0 0.04 -91 0.957 -48 0.957 -47 0.06 -99 0.4 4.5 0.04 -107 0.958 -53 0.956 -53 0.07 -109 0.4 5.0 0.06 -123 0.954 -59 0.954 -59 0.08 -123 0.4 5.5 0.07 -133 0.952 -65 0.952 -65 0.09 -136 0.4 6.0 0.08 -142 0.948 -71 0.951 -71 0.11 -147 0.5 6.5 0.10 -150 0.949 -77 0.945 -77 0.12 -157 0.5 7.0 0.11 -154 0.946 -83 0.946 -83 0.13 -166 0.5 7.5 0.11 -155 0.941 -89 0.944 -89 0.13 -176 0.5 8.0 0.11 -158 0.940 -95 0.940 -95 0.13 176 0.5 8.5 0.09 -164 0.940 -101 0.940 -101 0.12 172 0.5 9.0 0.07 -175 0.941 -106 0.940 -106 0.11 178 0.5 9.5 0.05 162 0.940 -112 0.939 -112 0.11 -176 0.5 10.0 0.04 144 0.939 -118 0.937 -118 0.10 -175 0.5 10.5 0.04 143 0.939 -124 0.940 -124 0.10 178 0.5 11.0 0.05 146 0.940 -130 0.938 -130 0.09 165 0.5 11.5 0.06 133 0.936 -136 0.939 -137 0.10 156 0.6 12.0 0.06 110 0.935 -143 0.935 -143 0.11 155 0.6 12.5 0.06 95 0.933 -149 0.933 -149 0.11 152 0.6 13.0 0.05 92 0.933 -155 0.932 -155 0.10 145 0.6 13.5 0.02 139 0.934 -161 0.932 -161 0.05 128 0.6 14.0 0.04 -143 0.933 -167 0.932 -167 0.01 66 0.6 14.5 0.07 -113 0.928 -174 0.931 -174 0.04 -84 0.6 15.0 0.11 -93 0.924 180 0.921 180 0.09 -111 0.7 15.5 0.16 -90 0.912 174 0.914 174 0.14 -123 0.8 16.0 0.19 -94 0.908 168 0.907 168 0.17 -130 0.8 16.5 0.20 -103 0.908 161 0.907 161 0.18 -129 0.8 17.0 0.21 -108 0.907 154 0.908 155 0.18 -133 0.8 17.5 0.20 -113 0.905 148 0.907 148 0.18 -138 0.9 18.0 0.20 -122 0.906 141 0.907 141 0.17 -143 0.9 18.5 0.19 -142 0.909 135 0.904 134 0.17 -133 0.8 19.0 0.21 -167 0.896 127 0.900 127 0.19 -125 1.0 19.5 0.25 -178 0.891 120 0.883 120 0.22 -130 1.0 20.0 0.30 -174 0.871 113 0.882 114 0.26 -151 1.2
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 12 june 29, 2007 TGS2304-SCC typical s-parameters (isolated path) rf input to rf output 2, 1 t a = 25 o c, i = 10 ma the reference planes for s-parameter data include bond wires as specified in the test assembly diagram. the s-parameters are also available on floppy disk and the world wide web. frequency s 11 s 21 s 12 s 22 is o la t io n (ghz) mag ang() mag ang() mag ang() mag ang() (db) 0.5 0.06 10 0.0003 127 0.0003 59 0.90 177 70.3 1.0 0.06 -35 0.0002 98 0.0002 48 0.90 173 74.0 1.5 0.08 -69 0.0001 -70 0.0001 -112 0.89 169 79.3 2.0 0.07 -80 0.0004 147 0.0004 159 0.88 165 68.0 2.5 0.12 -88 0.0007 156 0.0007 161 0.87 162 63.1 3.0 0.06 -102 0.0011 163 0.0011 161 0.87 158 59.2 3.5 0.09 -77 0.0017 155 0.0017 149 0.87 155 55.4 4.0 0.09 -106 0.0022 145 0.0022 140 0.87 151 53.2 4.5 0.07 -102 0.0029 138 0.0029 139 0.88 147 50.9 5.0 0.11 -117 0.0032 130 0.0032 130 0.88 143 49.9 5.5 0.13 -135 0.0036 124 0.0036 123 0.88 140 48.8 6.0 0.12 -150 0.0040 120 0.0040 120 0.89 137 48.0 6.5 0.16 -141 0.0048 115 0.0048 113 0.89 134 46.4 7.0 0.18 -172 0.0047 108 0.0047 110 0.89 132 46.6 7.5 0.12 -155 0.0059 109 0.0059 108 0.89 128 44.6 8.0 0.19 -169 0.0059 93 0.0059 94 0.88 124 44.6 8.5 0.10 -177 0.0061 91 0.0061 91 0.89 121 44.3 9.0 0.10 -156 0.0062 90 0.0062 90 0.88 118 44.2 9.5 0.10 -139 0.0072 86 0.0072 85 0.88 115 42.9 10.0 0.12 -148 0.0075 77 0.0075 76 0.88 111 42.5 10.5 0.15 -150 0.0073 70 0.0073 70 0.87 107 42.7 11.0 0.21 -170 0.0076 59 0.0076 61 0.88 103 42.4 11.5 0.14 151 0.0066 47 0.0066 48 0.88 101 43.6 12.0 0.18 172 0.0067 51 0.0067 53 0.89 100 43.5 12.5 0.13 122 0.0059 44 0.0059 44 0.88 98 44.5 13.0 0.07 115 0.0057 44 0.0057 44 0.89 94 44.9 13.5 0.03 -134 0.0061 43 0.0061 43 0.87 88 44.3 14.0 0.11 -145 0.0065 38 0.0065 39 0.88 81 43.7 14.5 0.15 -112 0.0066 35 0.0066 34 0.87 76 43.6 15.0 0.31 -152 0.0077 28 0.0077 27 0.87 72 42.3 15.5 0.12 -153 0.0070 20 0.0070 20 0.85 71 43.1 16.0 0.28 -141 0.0075 22 0.0075 22 0.87 66 42.5 16.5 0.17 139 0.0086 14 0.0086 13 0.85 64 41.3 17.0 0.26 -108 0.0102 -5 0.0102 -5 0.87 62 39.8 17.5 0.18 -178 0.0073 -25 0.0073 -24 0.87 63 42.7 18.0 0.20 -110 0.0057 -22 0.0057 -24 0.87 59 44.9 18.5 0.39 -143 0.0050 -20 0.0050 -18 0.88 52 46.1 19.0 0.27 173 0.0055 -14 0.0055 -16 0.86 39 45.2 19.5 0.55 -160 0.0065 -23 0.0065 -27 0.89 29 43.7 20.0 0.55 178 0.0070 -28 0.0070 -29 0.85 27 43.1
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 13 june 29, 2007 TGS2304-SCC rf characteristics equivalent schematic t a = 25 o c recommended test configuration pa ra meter test conditions ty p il insertion loss midband 0.6 iso isolation midband 38 swr(in) input standing?w ave ratio midband 1.2:1 swr(out) output standing?w ave ratio through selected output arm, midband 1.2:1 p 1db(in) input pow er at 1?db gain compression 23
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 14 june 29, 2007 TGS2304-SCC function table test assembly diagram low?loss p ath rf inp ut rf outp ut 0 rf outp ut 1 rf outp ut 2 rf outp ut 3 rf input to rf output 0 0 v -10 ma 10 ma 10 ma 10 ma rf input to rf output 1 0 v 10 ma -10 ma 10 ma 10 ma rf input to rf output 2 0 v 10 ma 10 ma -10 ma 10 ma rf input to rf output 3 0 v 10 ma 10 ma 10 ma -10 ma rf connections: bond using three 1.0-mil diameter, 20 to 25-mil-length gold bond wires at both rf input and rf output for optimum rf performance. close placement of external components is essential for resonant-free performance. refer to triquint?s gallium arsenide products designer?s information, mmic assembly procedures, on our web site.
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 15 june 29, 2007 mechanical drawing
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 16 june 29, 2007 TGS2304-SCC driver circuit for 2300 series gaas pin diode switches application notes: introduction this section describes how a single 5 v power supply and a 74f24on line driver are used in a driver circuit for the tgs2304 pin-diode switch. the pin switch must be mounted on a silicon mos capacitor (moscap or equivalent) of approximately 1000 pf (see mounting diagram, page 15). eight separate drivers are provided in a single ?f240 dip (see driver circuit, page 15). in addition, the ?f240 can be set to provide an inverted or a non-inverted output. the inverted is preferred in this application because it allows the 1g pin to be tied to ground instead of 5 v, eliminating the use of an extra power supply. the 74bct240, 74bct240n, and 74s240n also work with this driver circuit. the interface schematic (see page 16) shows a voltage divider that can be used to provide approximately 2 v to the rf input (common) port of the TGS2304-SCC. this bias voltage should be connected to the rf input through a bias tee or some equivalent rf choke/dc block network. connect this same bias voltage to the top plate of the moscap through a ~3-nh coil bonded to mmic ground pad as shown in the interface schematic and rf input bias coil assembly (both on page 16). care should be taken not to bond the inductor close to the via, as this could result in device damage. the ground pad is connected to the backside of the TGS2304-SCC by plated-through vias. this sets the top plate of the moscap to 2 v, effectively providing a 2 v reference for the rf input port and the cathodes of the two shunt diodes in each arm. the bottom plate of the moscap is true dc ground. connect the four rf output ports of the TGS2304-SCC to the ?f240 outputs through a bias tee or some equivalent rf choke/dc block, as shown in the interface schematic on page 16. connection instructions for proper switch operation, only one arm should be turned on at any one time as shown in the control logic table on page 15. the following description of how the driver circuit controls one arm of the TGS2304-SCC applies to all arms. to turn an arm on: a ttl high at the ?f240 input results in approximately 0.3 v at the corresponding output. this is applied to the appropriate rf output port. since the rf input port of the TGS2304-SCC is at 2 v, the arm is turned on. the series diode in that arm is forward biased by approximately 1.7 v, and the two shunt diodes are reverse biased (off) by 1.7 v. under these conditions, the bias current is typically 12 ma and midband insertion loss is typically 0.9 db. to turn an arm off: a ttl low at the ?f240 input results in approximately 3.1 v at the corresponding output. this is applied to the appropriate rf output port. since the rf input port of the TGS2304-SCC is at 2 v, the arm is turned off. the series diode in that arm is reverse biased by approximately 1.1 v, and the shunt diodes in that arm are forward biased (on) by 1.1 v. under these conditions, the bias current is typically 9 ma and the midband isolation is typically 40 db. operating instructions
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 17 june 29, 2007 TGS2304-SCC driver voltage ap p lied at r f rf switch arms 01230123 l h h h on off off off tgs2304?scc h l h h off on off off h h l h off off on off h h h l off off off on control logic table l = low (typically 0.3 v), h = high (typically 3.1 v) mounting diagram driver circuit
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet 18 june 29 , 2007 TGS2304-SCC interface schematic rf input bias coil assembly gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test.

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