sud35n10-26p www.vishay.com vishay siliconix s15-1599-rev. b, 06-jul-15 1 document number: 69796 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 100 v (d-s) mosfet ordering information: sud35n10-26p-e3 (lead (pb)-free) features ? trenchfet ? power mosfet ? 100 % uis tested ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? primary side switch notes a. based on t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. maximum under steady state conditions is 50 c/w. e. calculated based on maximum junction temperature. package limitation current is 50 a. product summary v ds (v) r ds(on) ( )i d (a) a q g (typ.) 100 0.0260 at v gs = 10 v 35 31 nc 0.0375 at v gs = 7 v 31 to-252 top view to g d s drain connected to tab n-channel mosfet g d s absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 100 v gate-source voltage v gs 20 continuous drain current (t j = 175 c) t c = 25 c i d 35 a t c = 70 c 32 t a = 25 c 12 b, c t a = 70 c 10 b, c pulsed drain current i dm 40 continuous source-drain diode current t c = 25 c i s 50 e t a = 25 c 6.9 b, c avalanche current pulse l = 0.1 mh i as 33 single pulse avalanche energy e as 55 mj maximum power dissipation t c = 25 c p d 83 w t c = 70 c 58 t a = 25 c 8.3 b, c t a = 70 c 5.8 b, c operating junction and storage temperature range t j , t stg -55 to +175 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, d t 10 s r thja 15 18 c/w maximum junction-to-case steady state r thjc 1.5 1.8
sud35n10-26p www.vishay.com vishay siliconix s15-1599-rev. b, 06-jul-15 2 document number: 69796 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not su bject to production testing. stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those in dicated in the operational sectio ns of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 100 - - v v ds temperature coefficient v ds /t j i d = 250 a - 165 - mv/c v gs(th) temperature coefficient v gs(th) /t j --11- gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.5 - 4.4 v gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v ds = 100 v, v gs = 0 v - - 1 a v ds = 100 v, v gs = 0 v, t j = 55 c - - 10 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 40 - - a drain-source on-s tate resistance a r ds(on) v gs = 10 v, i d = 12 a - 0.0210 0.0260 v gs = 7 v, i d = 8 a - 0.0285 0.0375 forward transconductance a g fs v ds = 15 v, i d = 12 a - 25 - s dynamic b input capacitance c iss v ds = 12 v, v gs = 0 v, f = 1 mhz - 2000 - pf output capacitance c oss - 180 - reverse transfer capacitance c rss -60- total gate charge q g v ds = 50 v, v gs = 10 v, i d = 12 a -3147 nc gate-source charge q gs -10- gate-drain charge q gd -9- gate resistance r g f = 1 mhz - 1.5 - turn-on delay time t d(on) v dd = 50 v, r l = 5 i d ? 10 a, v gen = 10 v, r g = 1 -1015 ns rise time t r -1015 turn-off delay time t d(off) -1525 fall time t f -1015 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - - 50 a pulse diode forward current a i sm --40 body diode voltage v sd i s = 10 a - 0.8 1.2 v body diode reverse recovery time t rr i f = 10 a, di/dt = 100 a/s, t j = 25 c -5075ns body diode reverse recovery charge q rr - 100 150 nc reverse recovery fall time t a -38- ns reverse recovery rise time t b -12-
sud35n10-26p www.vishay.com vishay siliconix s15-1599-rev. b, 06-jul-15 3 document number: 69796 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current gate charge transfer characteristics capacitance on-resistance vs. junction temperature 0 10 20 30 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v ds - drain-to-source voltage (v) - drain current (a) i d v gs =10vthru7v v gs =5v v gs =6v v gs =4v 0.020 0.021 0.022 0.023 0 10203040 - on-resistance ( ) r ds(on) i d - drain current (a) v gs =10v 0 2 4 6 8 10 0 5 10 15 20 25 30 35 i d =12a - gate-to-source voltage (v) q g - total gate charge (nc) v gs v ds =80v v ds =50v 0 2 4 6 8 10 0123456 v gs - gate-to-source voltage (v) - drain current (a) i d t c =25 c t c = - 55 c t c = 125 c c rss 0 500 1000 1500 2000 2500 0 20406080100 c oss c iss v ds - drain-to-source voltage (v) c - capacitance (pf) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 - 50 - 25 0 25 50 75 100 125 150 175 t j - junction temperature (c) ( n ormalized) - on-resistance r ds(on) i d =12a v gs =10v
sud35n10-26p www.vishay.com vishay siliconix s15-1599-rev. b, 06-jul-15 4 document number: 69796 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) source-drain diode forward voltage threshold voltage r ds(on) vs. v gs vs. temperature single pulse power, junction-to-ambient safe operating area 0.0 0.2 0.4 0.6 0.8 1.0 1.2 t j = 150 c 10 v sd - source-to-drain voltage (v) - source current (a) i s t j =25 c 1 100 1.5 2.0 2.5 3.0 3.5 4.0 4.5 - 50 - 25 0 25 50 75 100 125 150 175 i d = 250 a (v) v gs(th) t j - temperature (c) 0.00 0.02 0.04 0.06 0.08 45678910 - on-resistance ( ) r ds(on) v gs - gate-to-source voltage (v) t a =25 c t a = 125 c i d =12a 0 50 100 150 200 power (w) time (s) 10 1000 0.1 0.01 0.001 100 1 v ds - drain-to-source voltage (v) *v gs > minimum v gs at which r ds(on) is specified 100 1 0.1 1 10 100 0.01 10 - drain current (a) i d 0.1 t a =25 c single pulse 10 ms 100 ms dc 1s 10 s limited by r ds(on) * 1ms bvdss limited 100 s
sud35n10-26p www.vishay.com vishay siliconix s15-1599-rev. b, 06-jul-15 5 document number: 69796 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) current derating a power derating note a. the power dissipation p d is based on t j (max.) = 150 c, using junction-t o-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the cu rrent rating, when this rating falls below the package limit. 0 10 20 30 40 0 25 50 75 100 125 150 t c - case temperature (c) i d - drain current (a) 0 20 40 60 80 25 50 75 100 125 150 t c - case temperature (c) power dissipation (w)
sud35n10-26p www.vishay.com vishay siliconix s15-1599-rev. b, 06-jul-15 6 document number: 69796 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-ambient normalized thermal transient impedance, junction-to-case vishay siliconix maintains worldw ide manufacturing ca pability. products may be manufactured at one of several qualified locatio ns. reliability da ta for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69796 . 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 0.05 square wave pulse duration (s) n ormalized effective transient thermal impedance 1 0.1 0.01 single pulse t 1 t 2 n otes: p dm 1. duty cycle, d = 2. per unit base = r thja = 40 c/w 3. t jm - t a =p dm z thja (t) t 1 t 2 4. surface mounted duty cycle = 0.5 0.02 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 duty cycle = 0.5 square wave pulse duration (s) n ormalized effective transient thermal impedance 1 0.1 0.01 single pulse 0.02 0.05
package information www.vishay.com vishay siliconix revision: 03-jun-13 1 document number: 71197 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-252aa case outline notes ? dimension l3 is for reference only. ? xian, mingxin, and gem sh actual photo. l3 d l4 l5 b b2 e1 e1 d1 c a1 gage plane height (0.5 mm) e b3 e c2 a l h millimeters inches dim. min. max. min. max. a 2.18 2.38 0.086 0.094 a1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 c2 0.46 0.89 0.018 0.035 d 5.97 6.22 0.235 0.245 d1 4.10 - 0.161 - e 6.35 6.73 0.250 0.265 e1 4.32 - 0.170 - h 9.40 10.41 0.370 0.410 e 2.28 bsc 0.090 bsc e1 4.56 bsc 0.180 bsc l 1.40 1.78 0.055 0.070 l3 0.89 1.27 0.035 0.050 l4 - 1.02 - 0.040 l5 1.01 1.52 0.040 0.060 ecn: t13-0359-rev. o, 03-jun-13 ? dwg: 5347
application note 826 vishay siliconix document number: 72594 www.vishay.com revision: 21-jan-08 3 application note recommended minimum pads for dpak (to-252) 0.420 (10.668) recommended mi nimum pads dimensions in inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) return to index return to index
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