VSMY12850 www.vishay.com vishay semiconductors rev. 1.0, 19-mar-15 1 document number: 84234 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high speed infrared emitting diodes, 850 nm, surface emitter technology description as part of the surflight tm portfolio, the VSMY12850 is an infrared, 850 nm, top looking emitting diode based on gaalas surface emitter chip technology with extreme high radiant intensities, high op tical power and high speed, molded in clear, untinted pcb based package (with inner lens) for surface mounting (smd). applications ? emitter for proximity applications ? ir touch panels ? photointerrupters ? optical switch features ? package type: surface mount ? package form: top view ? dimensions (l x w x h in mm): 3.2 x 1.6 x 1.1 ? peak wavelength: p = 850 nm ? high reliability ? high radiant power ? very high radiant intensity ? angle of half intensity: ? = 40 ? suitable for high pulse current operation ? floor life: 168 h, msl 3, according to j-std-020 ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 note ? test conditions see table basic characteristics note ? moq: minimum order quantity product summary component i e (mw/sr) ? (deg) p (nm) t r (ns) VSMY12850 16 40 850 10 ordering information ordering code packaging remarks package form VSMY12850 tape and reel moq: 3000 pcs, 3000 pcs/reel top view absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 5v forward current i f 70 ma surge forward current t p = 100 s i fsm 1a power dissi pation p v 140 mw junction temperature t j 100 c operating temperature range t amb -40 to +85 c storage temperature range t stg -40 to +100 c soldering temperature acc. figure 10, j-std-020 t sd 260 c thermal resistance junction/amb ient j-std-051, soldered on pcb r thja 390 k/w
VSMY12850 www.vishay.com vishay semiconductors rev. 1.0, 19-mar-15 2 document number: 84234 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - power dissipation limit vs. ambient temperatur e fig. 2 - forward current limit vs. ambient temperature basic characteristics (t amb = 25 c, unless otherwise specified) fig. 3 - forward current vs. forward voltage fig. 4 - forward voltage vs. ambient temperature 0 20 40 60 80 100 120 140 0 20406080100 p v - power di ss ipation (mw) t amb - ambient temperature ( c) r thja = 390 k/w 0 10 20 30 40 50 60 70 80 0 20406080100 i f - forward current (ma) t amb - ambient temperature ( c) r thja = 390 k/w basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 20 ma, t p = 20 ms v f 1.1 1.4 1.9 v i f = 70 ma, t p = 20 ms v f 1.65 v i f = 1 a, t p = 100 s v f 2.9 v temperature coefficient of v f i f = 20 ma tk vf -1.7 mv/k reverse current i r not designed for reverse operation a junction capacitance v r = 0 v, f = 1 mhz, e = 0 mw/cm 2 c j 5pf radiant intensity i f = 20 ma, t p = 20 ms i e 2.3 4.7 mw/sr i f = 70 ma, t p = 20 ms i e 16 mw/sr i f = 1 a, t p = 100 s i e 130 mw/sr radiant power i f = 70 ma, t p = 20 ms e 40 mw temperature coefficient of radiant power i f = 20 ma tk e -0.19 %/k angle of half intensity ? 40 deg peak wavelength i f = 20 ma p 830 850 870 nm spectral bandwidth i f = 20 ma ? 35 nm temperature coefficient of p i f = 20 ma tk p 0.25 nm/k rise time i f = 100 ma, 20 % to 80 % t r 10 ns fall time i f = 100 ma, 20 % to 80 % t f 10 ns 1 10 100 1000 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 i f - forward current (ma) v f - forward voltage (v) t p = 100 s 1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80 -60 -40 -20 0 20 40 60 80 100 v f - forward voltage (v) t amb - ambient temperature ( c) i f = 20 ma
VSMY12850 www.vishay.com vishay semiconductors rev. 1.0, 19-mar-15 3 document number: 84234 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - relative forward voltage vs. ambient temperature fig. 6 - radiant intensity vs. forward current fig. 7 - relative radiant inte nsity vs. ambient temperature fig. 8 - relative radian t intensity vs. wavelength fig. 9 - relative radiant intensity vs. angular displacement 90 95 100 105 110 115 -60 -40 -20 0 20 40 60 80 100 v f, rel - relative forward voltage (%) t amb - ambient temperature ( c) i f = 20 ma t p = 20 m s 0.1 1 10 100 1000 1 10 100 1000 i e - radiant inten s ity (mw/ s r) i f - forward current (ma) t p = 100 s 80 85 90 95 100 105 110 -60 -40 -20 0 20 40 60 80 100 i e, rel - relative radiant inten s ity (%) t amb - ambient temperature ( c) i f = 20 ma t p = 20 m s 0 10 20 30 40 50 60 70 80 90 100 700 750 800 850 900 950 1000 i e, rel - relative radiant inten s ity (%) - wavelength (nm) i f = 20 ma i e, rel - relative radiant inten s ity - wavelength (nm) 0.6 80 0 0.7 0.4 0.2 0 30 70 60 50 40 10 20 1.0 0.9 0.8 ? - angular di s placement
VSMY12850 www.vishay.com vishay semiconductors rev. 1.0, 19-mar-15 4 document number: 84234 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 solder profile fig. 10 - lead (pb)-free reflow solder profile acc. j-std-020 drypack devices are packed in moistu re barrier bags (mbb) to prevent the products from mo isture absorption during transportation and storage. each bag contains a desiccant. floor life floor life (time between soldering and removing from mbb) must not exceed the time indicated on mbb label: floor life: 168 h conditions: t amb < 30 c, rh < 60 % moisture sensitivity level 3, according to j-std-020. drying in case of moisture absorpt ion devices should be baked before soldering. conditions see j-std-020 or label. devices taped on reel dry us ing recommended conditions 192 h at 40 c (+ 5 c), rh < 5 %. package dimensions in millimeters: VSMY12850 recommen d e d s ol d er pa d
VSMY12850 www.vishay.com vishay semiconductors rev. 1.0, 19-mar-15 5 document number: 84234 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 taping and reel dimensions in millimeters: VSMY12850
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