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igbt highspeedduopack:igbtintrenchandfieldstoptechnology withsoft,fastrecoveryanti-paralleldiode IKW50N60H3 600vhighspeedswitchingseriesthirdgeneration datasheet industrialpowercontrol
2 IKW50N60H3 highspeedswitchingseriesthirdgeneration rev.2.2,2014-03-12 highspeedigbtintrenchandfieldstoptechnology features: trenchstop tm technologyoffering ?verylowv cesat ?lowemi ?verysoft,fastrecoveryanti-paralleldiode ?maximumjunctiontemperature175c ?qualifiedaccordingtojedecfortargetapplications ?pb-freeleadplating;rohscompliant ?completeproductspectrumandpspicemodels: http://www.infineon.com/igbt/ applications: ?uninterruptiblepowersupplies ?weldingconverters ?converterswithhighswitchingfrequency keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package IKW50N60H3 600v 50a 1.85v 175c k50h603 pg-to247-3 g c e g c e
3 IKW50N60H3 highspeedswitchingseriesthirdgeneration rev.2.2,2014-03-12 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 g c e g c e
4 IKW50N60H3 highspeedswitchingseriesthirdgeneration rev.2.2,2014-03-12 maximumratings parameter symbol value unit collector-emittervoltage, t vj 3 25c v ce 600 v dccollectorcurrent,limitedby t vjmax t c =25c t c =100c i c 100.0 50.0 a pulsedcollectorcurrent, t p limitedby t vjmax i cpuls 200.0 a turn off safe operating area v ce 600v, t vj 175c, t p =1s - 200.0 a diodeforwardcurrent,limitedby t vjmax t c =25c t c =100c i f 60.0 30.0 a diodepulsedcurrent, t p limitedby t vjmax i fpuls 200.0 a gate-emitter voltage v ge 20 v short circuit withstand time v ge =15.0v, v cc 400v allowed number of short circuits < 1000 time between short circuits: 3 1.0s t vj =150c t sc 5 s powerdissipation t c =25c powerdissipation t c =100c p tot 333.0 167.0 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+150 c soldering temperature, wave soldering 1.6 mm (0.063 in.) from case for 10s 260 c mounting torque, m3 screw maximum of mounting processes: 3 m 0.6 nm thermalresistance parameter symbol conditions max.value unit characteristic igbt thermal resistance, junction - case r th(j-c) 0.45 k/w diode thermal resistance, junction - case r th(j-c) 1.05 k/w thermal resistance junction - ambient r th(j-a) 40 k/w g c e g c e
5 IKW50N60H3 highspeedswitchingseriesthirdgeneration rev.2.2,2014-03-12 electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =2.00ma 600 - - v collector-emitter saturation voltage v cesat v ge =15.0v, i c =50.0a t vj =25c t vj =125c t vj =175c - - - 1.85 2.10 2.25 2.30 - - v diode forward voltage v f v ge =0v, i f =30.0a t vj =25c t vj =125c t vj =175c - - - 1.65 1.67 1.65 2.05 - - v gate-emitter threshold voltage v ge(th) i c =0.80ma, v ce = v ge 4.1 5.1 5.7 v zero gate voltage collector current i ces v ce =600v, v ge =0v t vj =25c t vj =175c - - - - 40.0 3500.0 a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =50.0a - 30.0 - s electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic input capacitance c ies - 2960 - output capacitance c oes - 116 - reverse transfer capacitance c res - 96 - v ce =25v, v ge =0v,f=1mhz pf gate charge q g v cc =480v, i c =50.0a, v ge =15v - 315.0 - nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 13.0 - nh short circuit collector current max. 1000 short circuits time between short circuits: 3 1.0s i c(sc) v ge =15.0v, v cc 400v, t sc 5s t vj =150c - 330 - a g c e g c e
6 IKW50N60H3 highspeedswitchingseriesthirdgeneration rev.2.2,2014-03-12 switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-on delay time t d(on) - 23 - ns rise time t r - 37 - ns turn-off delay time t d(off) - 235 - ns fall time t f - 24 - ns turn-on energy e on - 1.45 - mj turn-off energy e off - 0.91 - mj total switching energy e ts - 2.36 - mj t vj =25c, v cc =400v, i c =50.0a, v ge =0.0/15.0v, r g =7.0 w , l s =90nh, c s =60pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. diode reverse recovery time t rr - 130 - ns diode reverse recovery charge q rr - 0.88 - c diode peak reverse recovery current i rrm - 16.9 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -598 - a/s t vj =25c, v r =400v, i f =30.0a, di f /dt =1000a/s switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =175c turn-on delay time t d(on) - 23 - ns rise time t r - 31 - ns turn-off delay time t d(off) - 273 - ns fall time t f - 24 - ns turn-on energy e on - 1.42 - mj turn-off energy e off - 1.13 - mj total switching energy e ts - 2.55 - mj t vj =175c, v cc =400v, i c =50.0a, v ge =0.0/15.0v, r g =7.0 w , l s =90nh, c s =60pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. diode reverse recovery time t rr - 217 - ns diode reverse recovery charge q rr - 2.40 - c diode peak reverse recovery current i rrm - 22.9 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -307 - a/s t vj =175c, v r =400v, i f =30.0a, di f /dt =1000a/s g c e g c e
7 IKW50N60H3 highspeedswitchingseriesthirdgeneration rev.2.2,2014-03-12 figure 1. collectorcurrentasafunctionofswitching frequency ( t j 175c, d =0.5, v ce =400v, v ge =15/0v, r g =7 w ) f ,switchingfrequency[khz] i c ,collectorcurrent[a] 1 10 100 1000 0 20 40 60 80 100 120 140 t c =80 t c =110 t c =80 t c =110 figure 2. forwardbiassafeoperatingarea ( d =0, t c =25c, t j 175c; v ge =15v) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 1 10 100 1000 0.1 1 10 100 t p =1s 10s 50s 100s 200s 500s dc figure 3. powerdissipationasafunctionofcase temperature ( t j 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 50 100 150 200 250 300 350 figure 4. collectorcurrentasafunctionofcase temperature ( v ge 3 15v, t j 175c) t c ,casetemperature[c] i c ,collectorcurrent[a] 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90 100 g c e g c e
8 IKW50N60H3 highspeedswitchingseriesthirdgeneration rev.2.2,2014-03-12 figure 5. typicaloutputcharacteristic ( t j =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 5 6 0 25 50 75 100 125 150 175 200 v ge =20v 17v 15v 13v 11v 9v 7v 5v figure 6. typicaloutputcharacteristic ( t j =175c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 5 6 0 25 50 75 100 125 150 175 200 v ge =20v 17v 15v 13v 11v 9v 7v 5v figure 7. typicaltransfercharacteristic ( v ce =20v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 5 6 7 8 9 10 11 12 0 50 100 150 200 t j =25c t j =175c figure 8. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t j ,junctiontemperature[c] v ce(sat) ,collector-emittersaturation[v] 0 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 3.5 i c =25a i c =50a i c =100a g c e g c e
9 IKW50N60H3 highspeedswitchingseriesthirdgeneration rev.2.2,2014-03-12 figure 9. typicalswitchingtimesasafunctionof collectorcurrent (ind.load, t j =175c, v ce =400v, v ge =15/0v, r g =7 w ,testcircuitinfig.e) i c ,collectorcurrent[a] t ,switchingtimes[ns] 10 20 30 40 50 60 70 80 90 100 10 100 t d(off) t f t d(on) t r figure 10. typicalswitchingtimesasafunctionofgate resistor (ind.load, t j =175c, v ce =400v, v ge =15/0v, i c =50a,testcircuitinfig.e) r g ,gateresistor[ w ] t ,switchingtimes[ns] 0 5 10 15 20 25 10 100 t d(off) t f t d(on) t r figure 11. typicalswitchingtimesasafunctionof junctiontemperature (ind.load, v ce =400v, v ge =15/0v, i c =50a, r g =7 w ,testcircuitinfig.e) t j ,junctiontemperature[c] t ,switchingtimes[ns] 25 50 75 100 125 150 175 10 100 t d(off) t f t d(on) t r figure 12. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =0,8ma) t j ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 0 25 50 75 100 125 150 175 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 typ. min. max. g c e g c e
10 IKW50N60H3 highspeedswitchingseriesthirdgeneration rev.2.2,2014-03-12 figure 13. typicalswitchingenergylossesasa functionofcollectorcurrent (ind.load, t j =175c, v ce =400v, v ge =15/0v, r g =7 w ,testcircuitinfig.e) i c ,collectorcurrent[a] e ,switchingenergylosses[mj] 10 20 30 40 50 60 70 80 90 100 0 1 2 3 4 5 6 7 8 e off e on e ts figure 14. typicalswitchingenergylossesasa functionofgateresistor (ind.load, t j =175c, v ce =400v, v ge =15/0v, i c =50a,testcircuitinfig.e) r g ,gateresistor[ w ] e ,switchingenergylosses[mj] 2 6 10 14 18 22 0 1 2 3 4 5 e off e on e ts figure 15. typicalswitchingenergylossesasa functionofjunctiontemperature (indload, v ce =400v, v ge =15/0v, i c =50a, r g =7 w ,testcircuitinfig.e) t j ,junctiontemperature[c] e ,switchingenergylosses[mj] 25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 e off e on e ts figure 16. typicalswitchingenergylossesasa functionofcollectoremittervoltage (ind.load, t j =175c, v ge =15/0v, i c =50a, r g =7 w ,testcircuitinfig.e) v ce ,collector-emittervoltage[v] e ,switchingenergylosses[mj] 200 250 300 350 400 450 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 e off e on e ts g c e g c e
11 IKW50N60H3 highspeedswitchingseriesthirdgeneration rev.2.2,2014-03-12 figure 17. typicalgatecharge ( i c =50a) q ge ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0 50 100 150 200 250 300 350 0 2 4 6 8 10 12 14 16 120v 480v figure 18. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 10 20 30 10 100 1000 c ies c oes c res figure 19. typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage ( v ce 400v,startat t j =25c) v ge ,gate-emittervoltage[v] i c(sc) ,shortcircuitcollectorcurrent[a] 10 12 14 16 18 20 150 250 350 450 550 650 750 figure 20. shortcircuitwithstandtimeasafunctionof gate-emittervoltage ( v ce 400v,startat t j 150c) v ge ,gate-emittervoltage[v] t sc ,shortcircuitwithstandtime[s] 10 11 12 13 14 15 0 3 6 9 12 15 g c e g c e
12 IKW50N60H3 highspeedswitchingseriesthirdgeneration rev.2.2,2014-03-12 figure 21. igbttransientthermalimpedance ( d = t p /t) t p ,pulsewidth[s] z thjc ,transientthermalimpedance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 7.0e-3 4.4e-5 2 0.03736378 1.0e-4 3 0.09205027 7.2e-4 4 0.1299574 8.3e-3 5 0.1835461 0.07425315 figure 22. diodetransientthermalimpedanceasa functionofpulsewidth ( d = t p /t) t p ,pulsewidth[s] z thjc ,transientthermalimpedance[k/w] 1e-7 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.04915956 7.5e-6 2 0.2254532 2.2e-4 3 0.3125229 2.3e-3 4 0.2677344 0.01546046 5 0.1951733 0.1078904 figure 23. typicalreverserecoverytimeasafunction ofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] t rr ,reverserecoverytime[ns] 800 900 1000 1100 1200 0 50 100 150 200 250 300 t j =25c, i f = 50a t j =175c, i f = 50a figure 24. typicalreverserecoverychargeasa functionofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] q rr ,reverserecoverycharge[c] 800 900 1000 1100 1200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t j =25c, i f = 50a t j =175c, i f = 50a g c e g c e
13 IKW50N60H3 highspeedswitchingseriesthirdgeneration rev.2.2,2014-03-12 figure 25. typicalreverserecoverycurrentasa functionofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] i rr ,reverserecoverycurrent[a] 800 900 1000 1100 1200 10 14 18 22 26 30 t j =25c, i f = 50a t j =175c, i f = 50a figure 26. typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] di rr /dt ,diodepeakrateoffallof i rr [a/s] 800 900 1000 1100 1200 -700 -600 -500 -400 -300 -200 -100 0 t j =25c, i f = 50a t j =175c, i f = 50a figure 27. typicaldiodeforwardcurrentasafunction offorwardvoltage v f ,forwardvoltage[v] i f ,forwardcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 0 10 20 30 40 50 60 70 80 90 100 t j =25c t j =175c figure 28. typicaldiodeforwardvoltageasafunction ofjunctiontemperature t j ,junctiontemperature[c] v f ,forwardvoltage[v] 0 25 50 75 100 125 150 175 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 i f =15a i f =30a i f =60a g c e g c e
14 IKW50N60H3 highspeedswitchingseriesthirdgeneration rev.2.2,2014-03-12 g c e g c e pg-to247-3
15 IKW50N60H3 highspeedswitchingseriesthirdgeneration rev.2.2,2014-03-12 g c e g c e pg-to247-3 t a a b b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% i c t 90% v ge v ge (t) t t i c (t) v ce (t) 90% v ge v ge (t) t t i c (t) v ce (t) t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3
16 IKW50N60H3 highspeedswitchingseriesthirdgeneration rev.2.2,2014-03-12 revisionhistory IKW50N60H3 revision:2014-03-12,rev.2.2 previous revision revision date subjects (major changes since last revision) 1.1 2010-07-26 preliminary datasheet 2.1 2013-12-10 new value ices max limit at 175c 2.2 2014-03-12 max ratings vce, tvj 3 25c welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com publishedby infineontechnologiesag 81726munich,germany 81726mnchen,germany ?2014infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestinfineon technologiesoffice(www.infineon.com). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesin question,pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineon technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. g c e g c e pg-to247-3 t a a b b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% i c t 90% v ge v ge (t) t t i c (t) v ce (t) 90% v ge v ge (t) t t i c (t) v ce (t) t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3

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