CRS10I30A 2013-11-01 1 toshiba schottky barrier rectifier schottky barrier type CRS10I30A secondary rectification in switching regulators reverse-current protection in mobile devices ? forward voltage: v fm = 0.39 v (max) @ i fm = 0.7 a ? forward current (av): i f (av) = 1.0 a ? repetitive peak reverse voltage: v rrm = 30 v ? suitable for high-density board a ssembly due to the use of a small surface-mount package, ?s-flat tm ? absolute maximum ratings (ta = 25c) characteristics symbol rating unit repetitive peak reverse voltage v rrm 30 v forward current (av) i f (av) 1.0 (note 1) a peak one-cycle surge current i fsm 20 (50 hz) a junction temperature t j 150 c storage temperature t stg -55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage a nd the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: ta = 51c: device mounted on a glass-epoxy board board size: 50 mm 50 mm soldering size: 6 mm 6 mm board thickness: 1.6 mm rectangular waveform ( = 180), v r = 15 v unit: mm anode cathode 0.16 0 ~ 0.1 0.65 0.2 0.65 0.2 3.5 0.2 2.6 0.1 0.98 0.1 0.9 0.1 + 0.2 ? 0.1 1.6 jedec D jeita D toshiba 3-2a1a weight: 0.013 g (typ.) start of commercial production 2009-11
CRS10I30A 2013-11-01 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit v fm (1) i fm = 0.1 a (pulse test) D 0.27 D v fm (2) i fm = 0.7 a (pulse test) D 0.35 0.39 peak forward voltage v fm (3) i fm = 1.0 a (pulse test) D 0.37 D v i rrm (1) v rrm = 5.0 v (pulse test) D 10 D repetitive peak reverse current i rrm (2) v rrm = 30 v (pulse test) D 20 60 a junction capacitance c j v r = 10 v, f = 1.0 mhz D 50 D pf device mounted on a ceramic board board size: 50 mm 50 mm soldering land: 2 mm 2 mm board thickness: 0.64 mm D D 70 thermal resistance (junction to ambient) r th (j-a) device mounted on a glass-epoxy board board size: 50 mm 50 mm soldering land: 6 mm 6 mm board thickness: 1.6 mm D D 140 c/w thermal resistance (junction to lead) r th (j- ? ) D D D 20 c/w marking abbreviation code part no. sf CRS10I30A land pattern dimensions for reference only 2.8 1.2 1.2 unit: mm part no.(or abbreviation code) cathode mark and lot code a node ? sf cathode cathode dot
CRS10I30A 2013-11-01 3 handling precaution schottky barrier diodes have reverse current characteristics compared to other diodes. there is a possibility sbd may cause ther mal runaway when it is used under high temperature or high voltage. please take forward and reverse loss into consideration during design. the absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded,even for a moment. do not exceed any of these ratings. the followi ng are the general derating methods that we recommend when you design a circuit with a device. v rrm : use this rating with reference to the above. v rrm has a temperature coefficient of 0.1%/c. take this temperature coefficient into account designing a device at low temperature. i f(av) : we recommend that the worst case current be no greater than 80% of the absolute maximum rating of i f(av) and t j be below 120c. when using this device, take the margin into consideration by using an allowable ta max-i f(av) curve. i fsm : this rating specifies the non-repetitive peak curren t. this is only applied for an abnormal operation, which seldom occurs during the lifespan of the device. t j : derate this rating when using a device in order to ensure high reliability. we recommend that the device be used at a t j of below 120c. thermal resistance between junction and ambient fluctuat es depending on the device?s mounting condition. when using a device, design a circuit board and a soldering land size to match the appropriate thermal resistance value. please refer to the rectifiers databook for further information.
CRS10I30A 2013-11-01 4 0 40 160 20 60 120 100 80 = 60 120 dc 180 140 0 40 160 20 60 120 100 80 = 60 120 dc 180 140 instantaneous forward voltage v f (v) i f ? v f instantaneous forward current i f (a) average forward current i f (av) (a) average forward power dissipation p f (av) (w) average forward current i f (av) (a) ta m a x ? i f (av) ceramic substrate (substrate size: 50 mm 50 mm, soldering land: 2 mm 2 mm) maximum allowable temperature ta m a x ( c ) average forward current i f (av) (a) maximum allowable temperature ta m a x ( c ) average forward current i f (av) (a) t ? max ? i f (av) maximum allowable lead temperature t ? max (c) p f (av) ? i f (av) ta m a x ? i f (av) glass-epoxy substrate (substrate size: 50 mm 50 mm, soldering land: 6 mm 6 mm) 10 0 0.4 0.2 1.0 0.8 0.6 1 0.1 0.01 0.3 0.03 3 t j = 150c 75c 25c 125c 360 0 v r = 15 v i f (av) conduction an g le rectangular waveform 360 0 v r = 15 v i f ( av ) conduction angle rectangular waveform 360 0 v r = 15 v i f ( av ) conduction angle rectangular waveform 0 40 160 20 60 120 100 80 = 60 120 dc 180 140 0.0 0 0.1 0.3 0.6 1.0 0.2 0.2 0.8 = 60 120 dc 180 1.4 0.5 0.4 1.6 360 0 conduction angle rectangular waveform 0.6 0.4 1.2 0.0 0.6 1.0 0.2 0.8 1.4 1.6 0.4 1.2 0.0 0.6 1.0 0.2 0.8 1.4 1.6 0.4 1.2 0.0 0.6 1.0 0.2 0.8 1.4 1.6 0.4 1.2 pulse test 10 1 100 1000 0.001 0.01 0.1 1 10 1000 3 5 30 50 300 500 device mounted on a ceramic board: board size: 50 mm 50 mm soldering land: 2.0 mm 2.0 mm board thickness: 0.64 mm device mounted on a glass-epoxy board: board size: 50 mm 50 mm soldering land: 6.0 mm 6.0 mm board thickness: 1.6 mm time t (s) r th (j-a) ? t transient thermal impedance r th (j-a) (c/w) 100
CRS10I30A 2013-11-01 5 0.1 10 0 20 30 0.2 0.3 0.4 0.5 0 0.8 dc 300 240 180 120 =60 0 20 120 80 40 60 100 100 1 0.001 0.01 10 140 v r = 30 v 20 v 10 v 5 v 3 v 0.1 160 pulse test number of cycles surge current surge current i fsm (a) reverse voltage v r (v) c j ? v r (typ.) junction capacitance c j (pf) junction temperature t j (c) i r ? t j (typ.) reverse current i r (ma) reverse voltage v r (v) p r (av) ? v r (typ.) average reverse power dissipation p r (av) (w) 24 16 12 4 0 10 1 3 30 100 5 50 ta = 25c f = 50 hz 30 1 100 1000 300 500 50 3 10 30 5 50 100 f = 1 mhz ta = 25c 10 8 20 15 v 0.7 0.6 360 0 v r rectangular waveform conduction angle t j = 150c
CRS10I30A 2013-11-01 6 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively "toshiba"), reserve the right to make changes to the in formation in this document, and related hardware, software and systems (collectively "product") without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba's written permission, reproduc tion is permissible only if reproduction is without alteration/omission. ? though toshiba works continually to improve product's quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest versions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and application notes for product and the precautions and condi tions set forth in the "toshiba semiconductor reliability handbook" and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers' product design or applications. ? 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